Latest News for: mosfets

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ROHM Launches 600V Super Junction MOSFETs in Surface-Mount Package with High Thermal Performance

The Eagle-Tribune 10 Jul 2026
Santa Clara, CA and Kyoto, Japan, July 09, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed a new lineup of 600V Super Junction MOSFETs, the R60xxXNx and R60xxWNx series. ... .
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AOS’s 80V power conversion MOSFET features DFN6x5 AmpStack packaging

Eweekly 08 Jul 2026
Designed to support high power-density requirements, AOS’ packaging uses vertically stacked die technology with two MOSFETs connected as a high-side and low-side MOSFET, forming a half-bridge.
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Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging

Eweekly 07 Jul 2026
Our 1200 V SiC MOSFETs in QDPAK combine the performance of our SiC technology with the thermal advantages of top-side cooling, giving engineers a practical and scalable option for next-generation high-power applications.” ... .
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Vishay Intertechnology Standard-Level 40 V MOSFETs Prevent False Triggering and Reduce Noise in Motor Control Circuits (Vishay Intertechnology Inc)

Public Technologies 07 Jul 2026
VSH) today introduced four new 40 V TrenchFET® Gen IV standard-level n-channel power MOSFETs in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package ... The MOSFETs are 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
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Toshiba Launches 80V N-Channel Power MOSFET Using Its Latest Generation Process to Improve Efficiency in ...

Antara News 01 Jul 2026
The MOSFET targets applications such as switched-mode power supplies for industrial equipment used in AI data centers and communications base stations ... As of June 2026, based on Toshiba’s low-voltage power MOSFET processes ... MOSFETs.
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Toshiba Launches 80V N-Channel Power MOSFET Using Its Latest Generation Process to Improve Efficiency in AI Data Centers (Toshiba Corporation)

Public Technologies 30 Jun 2026
KAWASAKI, Japan-Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched "TPM1R408RH," an 80V N-channel power MOSFET fabricated using U-MOS11-H, Toshiba's latest-generation process[1].
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ROHM Launches New Top-side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support

PR Newswire 10 Jun 2026
has developed the TSC3PAK (14.00 x 18.58 x 3.50 mm) package for SiC MOSFETs ... https.//www.rohm.com/products/sic-power-devices/sic-mosfet?page=1&PS_PackageShortCode=TSC3PAK#parametricSearch .
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ROHM launches New Top-Side Cooling Package for SiC MOSFETs

Nasdaq Globe Newswire 09 Jun 2026
Combining High Heat Dissipation with High Voltage Support. Combining High Heat Dissipation with High Voltage Support ... .
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