With a drain-source breakdown voltage of 1700 V, the SCT2H12NZ N-channel SiC (silicon carbide) MOSFET from ROHM is optimized for industrial applications, including high-voltage general-purpose ...

Offering the market's highest MOSFET breakdown voltage, together with a complete set of integrated features and minimal external circuitry, designers will be able to save bill-of-materials costs and ...

The voltage on Q2 's drain rises rapidly to the desired output voltage plus the voltage drop across D1 . As the drain voltage rises, Q2 's drain-to-source capacitance attempts to pull the MOSFET's ...

ROHM has developed a 30 V N-channel metal-oxide semiconductor field-effect transistor (MOSFET) — AW2K21 — in a common-source ...

Toshiba extends its lineup to control 1A and 6A class gate drive currents for small- to medium-capacity MOSFET and IGBT gate ...

A new low-resistance MOSFET reduces heat loss and space usage, making it ideal for smartphones and other fast-charging ...

Infineon has also added 40-, 60-, and 80-V breakdown-voltage families to its OptiMOS3 N-channel MOSFET line. Each family provides significantly lower conduction losses than existing alternatives ...

MagnaChip Semiconductor, a designer and manufacturer of analogue and mixed-signal semiconductor platform solutions, has introduced a High-Voltage Super Junction MOSFET with a 900V breakdown voltage ...

With a breakdown voltage of 650V for a current of 7A (100°C), the C7 is optimized for hard switching topologies such as Power Factor Correction, solar boost circuit applications.

Breakdown voltage is rated at 200V. Power dissipation is 3.8W and thermal resistance is specified at 1.9°C/W, compared to 16°C/W for SO-8 types.