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STC945

This document provides information on the STC945 NPN silicon transistor. It is described as a general small signal amplifier with low collector saturation voltage of 0.25V max and low output capacitance of 2pF typically. It can be used in a complementary pair with transistor STA733. The document provides ordering information, absolute maximum ratings, electrical characteristics, and characteristic curves of the transistor.

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Henry Castand
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72 views4 pages

STC945

This document provides information on the STC945 NPN silicon transistor. It is described as a general small signal amplifier with low collector saturation voltage of 0.25V max and low output capacitance of 2pF typically. It can be used in a complementary pair with transistor STA733. The document provides ordering information, absolute maximum ratings, electrical characteristics, and characteristic curves of the transistor.

Uploaded by

Henry Castand
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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STC945

Semiconductor

NPN Silicon Transistor

Description
General small signal amplifier

Features
Low collector saturation voltage : VCE(sat)=0.25V(Max.)
Low output capacitance : Cob=2pF(Typ.)
Complementary pair with STA733

Ordering Information
Type NO.

Marking

STC945

STC945

Package Code
TO-92

Outline Dimensions

unit : mm
3.450.1
4.50.1

4.50.1

2.250.1

2.060.1

14.00.40

0.40.02

1.27 Typ.
2.54 Typ.

PIN Connections
1. Emitter
2. Collector
3. Base

0.38

1.200.1

1 2 3

KST-9075-000

STC945
(Ta=25C)

Absolute maximum ratings


Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

50

Collector-Emitter voltage

VCEO

40

Emitter-Base voltage

VEBO

Collector current

IC

150

mA

Collector dissipation

PC

625

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150

(Ta=25C)

Electrical Characteristics
Characteristic

Symbol

Test Condition

Min. Typ. Max.

Unit

Collector-Base breakdown voltage

BVCBO

IC=50A, IE=0

50

Collector-Emitter breakdown voltage

BVCEO

IC=1mA, IB=0

40

Emitter-Base breakdown voltage

BVEBO

IE=50A, IC=0

Collector cut-off current

ICBO

VCB=50V, IE=0

0.1

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

DC current gain

hFE*

VCE=6V, IC=2mA

70

700

0.25

80

MHz

Collector-Emitter saturation voltage


Transistion frequency

VCE(sat)
fT

IC=100mA, IB=10mA
VCE=10V, IC=1mA

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

3.5

pF

Noise figure

NF

VCE=6V, IC=0.1mA,
f=1KHz, Rg=10K

10

dB

* : hFE rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700

KST-9075-000

STC945
Electrical Characteristic Curves
Fig. 1 PC Ta

Fig. 3 IC -VCE

Fig. 2 IC -VBE

Fig. 4 hFE -IC

Fig. 5 VCE(sat) -IC

KST-9075-000

This datasheet has been downloaded from:


www.DatasheetCatalog.com
Datasheets for electronic components.

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