MCC
Features
l Through Hole Package l 150oC Junction Temperature
Pin Configuration Bottom View
omponents 21201 Itasca Street Chatsworth !"# $
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BC556,B BC557,A,B,C BC558,B
PNP Silicon Amplifier Transistor 625mW
Mechanical Data
l Case: TO-92, Molded Plastic l Polarity: indicated as above.
TO-92
Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 IC Pd Pd
RqJA
Unit V
C
Collector-Base Voltage
BC556 BC557 BC558 BC556 BC557 BC558
V V mA mW mW/oC W mW/oC
o
D
Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature
-100 625 5.0 1.5 12 200 83.3
G
DIMENSIONS
C/W C/W
o
DIM A B C D E G
RqJC
Tj, TSTG -55~150
INCHES MIN .175 .175 .500 .016 .135 .095
MAX .185 .185 --.020 .145 .105
MM MIN 4.45 4.46 12.7 0.41 3.43 2.42
MAX 4.70 4.70 --0.63 3.68 2.67
NOTE
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BC556 thru BC558B
MCC
Symbol Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 5.0 5.0 5.0 80 50 30 V 65 45 30 V V
Collector Base Breakdown Voltage (IC = 100 Adc)
Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62 0.7 0.7 0.82 1.0 V --0.3 V 120 120 120 120 180 420 90 150 270 170 290 500 120 180 300 500 800 800 220 460 800 V
(IC = 2.0 mAdc, VCE = 5.0 V)
(IC = 100 mAdc, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 100mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob 280 320 360 3.0 6.0 pF MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz)
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BC556 thru BC558B
BC557/BC558
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 TA = 25C
MCC
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
0.3
VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100
Figure 1. Normalized DC Current Gain
Figure 2. Saturation and On Voltages
2.0 VCE , COLLECTOREMITTER VOLTAGE (V) VB , TEMPERATURE COEFFICIENT (mV/ C) TA = 25C 1.6
1.0 55C to +125C 1.2 1.6 2.0 2.4 2.8
1.2 IC = 10 mA IC = 50 mA IC = 20 mA IC = 200 mA IC = 100 mA
0.8
0.4
0.02
0.1 1.0 IB, BASE CURRENT (mA)
10 20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
f T CURRENTGAIN BANDWIDTH PRODUCT (MHz) ,
Figure 4. BaseEmitter Temperature Coefficient
10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C
400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25C
3.0 2.0
1.0 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. CurrentGain Bandwidth Product
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BC556 thru BC558B
BC556
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
MCC
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
0.1 0.2
Figure 7. DC Current Gain
Figure 8. On Voltage
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
2.0 VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
50 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
Figure 9. Collector Saturation Region
Figure 10. BaseEmitter Temperature Coefficient
f T CURRENTGAIN BANDWIDTH PRODUCT ,
40 TJ = 25C C, CAPACITANCE (pF) 20 Cib
500
VCE = 5.0 V
200 100 50
10 8.0 6.0 4.0 2.0 0.1 0.2 Cob
20
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100
100 1.0 10 IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. CurrentGain Bandwidth Product
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