DISCRETE SEMICONDUCTORS

DATA SHEET

BLW97
HF power transistor
Product specification August 1986
Philips Semiconductors Product specification

HF power transistor BLW97

DESCRIPTION severe load-mismatch conditions. All

leads are isolated from the flange.
N-P-N silicon planar epitaxial
transistor designed for use in class-A, The transistors are supplied in
AB and B operated high-power matched hFE groups.
industrial and military transmitting
equipment in the h.f. band.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF OPERATION VCE IC(ZS) f PL Gp ηdt d3 d5

V A MHz W dB % dB dB
s.s.b.
28 0,1 1,6 − 28 175 (PEP) > 11,5 > 40 < −30 < −30
(class-AB)

PIN CONFIGURATION PINNING - SOT121B.

PIN DESCRIPTION
handbook, halfpage 4 3 1 collector
2 emitter
3 base
4 emitter

1 2
MLA876

Fig.1 Simplified outline. SOT121B.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.

August 1986 2
Philips Semiconductors Product specification

HF power transistor BLW97

RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (peak value)
VBE = 0 VCESM max. 65 V
open base VCEO max. 33 V
Emitter-base voltage (open collector) VEBO max. 4 V
Collector current
average IC(AV) max. 15 A
peak value; f > 1 MHz ICM max. 50 A
Total d.c. power dissipation at Th = 25°C Ptot(d.c.) max. 190 W
R.F. power dissipation
f > 1 MHz; Th = 25°C Ptot(rf) max. 230 W
Storage temperature Tstg −65 to + 150 °C
Operating junction temperature Tj max. 200 °C

MGP703 MGP704
102 350
handbook, halfpage handbook, halfpage

Ptot
(W)
IC
(A)
250
ΙΙΙ

10 Th = 70 °C Tmb = 25 °C
ΙΙ

150
Ι

1 50
1 10 102 0 40 80 120
VCE (V) Th (°C)

I Continuous d.c. operation

II Continuous r.f. operation (f > 1 Mhz).
III Short-time operation during mismatch; (f > 1 MHz).

Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves.

THERMAL RESISTANCE
(dissipation = 120 W; Th = 25 °C i.e. Tmb = 49 °C)
From junction to mounting base
(d.c. dissipation) Rth j-mb(dc) = 0,63 K/W
From junction to mounting base
(r.f. dissipation) Rth j-mb(rf) = 0,48 K/W
From mounting base to heatsink Rth mb-h = 0,20 K/W

August 1986 3
Philips Semiconductors Product specification

HF power transistor BLW97

CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA V(BR)CES > 65 V
IC = 100 mA; open base V(BR)CEO > 33 V
Emitter-base breakdown voltage
IE = 20 mA; open collector V(BR)EBO > 4 V
Collector cut-off current
VCE = 33 V; VBE = 0 ICES < 20 mA
Second breakdown energy; L = 25 mH; f = 50 Hz
open base ESBO > 20 mJ
RBE = 10 Ω ESBR > 20 mJ
D.C. current gain(1) typ. 30
IC = 10 A; VCE = 5 V hFE 15 to 50
D.C. current gain ratio of matched devices(1)
IC = 10 A; VCE = 5 V hFE1/hFE2 < 1,2
Collector-emitter saturation voltage(1)
IC = 25 A; IB = 5 A VCEsat typ. 2,4 V
Transition frequency at f = 100 MHz(2)
−IE = 10 A; VCB = 28 V fT typ. 230 MHz
−IE = 20 A; VCB = 28 V fT typ. 235 MHz
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 28 V Cc typ. 380 pF
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 28 V Cre typ. 235 pF
Collector-flange capacitance Ccf typ. 4,5 pF

Notes
1. Measured under pulse conditions: tp = 500 µs.
2. Measured under pulse conditions: tp = 300 µs; δ = 0,02.

August 1986 4
Philips Semiconductors Product specification

HF power transistor BLW97

MGP705 MGP706
50
handbook, halfpage
260
handbook, halfpage
VCE = 28 V fT VCB = 28 V
hFE (MHz)
220
15 V
40

typ
180
15 V 5V
30
140
typ
5V

20 100
0 10 20 IC (A) 30 0 10 −IE (A) 20

Fig.4 Tj = 25 °C. Fig.5 Tj = 25 °C; f = 100 MHz; tp = 300 µs.

MGP707 MGP708
1000 10
handbook, halfpage handbook, halfpage
Cc
IC
(pF)
(A)
800
Th = 70 °C 25 °C
1

600

typ
typ 10−1
400

200 10−2
0 20 VCB (V) 40 500 900 1300
VBE (mV)

Fig.6 IE = ie = 0; f = 1 MHz; Tj = 25 °C. Fig.7 VCE = 28 V.

August 1986 5
Philips Semiconductors Product specification

HF power transistor BLW97

APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier).
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz.

OUTPUT POWER Gp ηdt IC d3(1) d5(1) IC(ZS)

W dB % A dB dB A
> 11,5 > 40 < 7,8 < −30 < −30
175 (PEP) 0,1
typ. 13,0 typ. 50 typ. 6,3 typ. −34 typ. −38

Note
1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.

handbook, full pagewidth C10

L4
C1
C11 50 Ω
L1 R1
C6
50 Ω C2 T.U.T. L3
C14
C3 C4 C12 C13
C7
R2 L2
C8

C9 R3
C5
L5

VBB VCC MGP709

Fig.8 Class-AB (s.s.b.) test circuit.

August 1986 6
Philips Semiconductors Product specification

HF power transistor BLW97

List of components:
C1 = 47 pF (500 V) multilayer ceramic chip capacitor(1)
C2 = 100 pF film dielectric trimmer
C3 = 2 × 130 pF (300 V) multilayer ceramic chip capacitors in parallel(1)
C4 = 280 pF film dielectric trimmer
C5 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C6 = 2 × 180 pF (300 V) multilayer ceramic chip capacitors in parallel(1)
C7 = 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104
C8 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C9 = 2,2 µF - 63 V solid aluminium electrolytic capacitor
C10 = 5 × 82 pF (500 V) multilayer ceramic chip capacitors in parallel(1)
C11 = 250 pF air dielectric trimmer
C12 = 5 × 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate
C13 = 100 pF air dielectric trimmer
C14 = 3 × 91 pF (500 V) multilayer ceramic chip capacitors in parallel(1)
R1 = 0,7 Ω - 7 W (7 × 4,7 Ω - 1 W carbon resistors in parallel)
R2 = 27 Ω - 0,25 W carbon resistor
R3 = 4,7 Ω - 0,25 W carbon resistor
L1 = 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2 × 5 mm
L2 = Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel
L3 = 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2 × 5 mm
L4 = 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2 × 5 mm
L5 = Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel

Note
1. American Technical Ceramics capacitor or capacitor of same quality.

August 1986 7
Philips Semiconductors Product specification

HF power transistor BLW97

MGP710 MGP711
−20 16 80
handbook, halfpage handbook, halfpage
GP ηc
dt
d3, d5 d3 GP
(dB) (%)
(dB)
typ d5 12 60
−40 ηc
dt
typ
8 40

−60
4 20

−80 0 0
0 120 240 0 120 240
PL (W) P.E.P. PL (W) P.E.P.

VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C. f2 = 28,001 MHz; Th = 25 °C.

Fig.9 Intermodulation distortion (see note on Fig.10 Power gain and double-tone efficiency.
preceding page).

RUGGEDNESS
The BLW97 is capable of withstanding full load mismatch MGP712
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a 30
handbook, halfpage
load mismatch (VSWR = 5 through all phases) up to
175 W (P.E.P.) under the following conditions:
GP
VCE = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W. (dB)

Figures 11 and 12 t typical curves which are valid for one

transistor of a push-pull amplifier in s.s.b. class-AB
20
operation. typ

10
1 10 f (MHz) 102

VCE = 28 V; IC(ZS) = 0,1 A;

PL = 175 W(PEP); Th = 25 °C;
ZL = 1,55 Ω

Fig.11 Power gain.

August 1986 8
Philips Semiconductors Product specification

HF power transistor BLW97

MGP713 MGP714
4 1
handbook, halfpage
handbook, halfpage

ri, xi
ri (Ω) xi
ri, −xi
(Ω)
0.5
ri
−xi

2
typ typ
0

0 −0.5
1 10 102 25 75 f (MHz) 125
f (MHz)

VCE = 28 V; IC(ZS) = 0,1 A; VCE = 28 V; PL = 175 W; Th = 25 °C;

PL = 175 W(PEP); Th = 25 °C; class-B operation.
ZL = 1,55 Ω

Fig.12 Input impedance (series components). Fig.13 Input impedance (series components).

MGP715 MGP716
3
handbook, halfpage
1.5 20
handbook, halfpage

RL XL GP
(Ω) (Ω) (dB)

RL
2 1.0 15

typ typ
1 0.5 10

XL

0 0 5
25 75 f (MHz) 125 25 75 f (MHz) 125

VCE = 28 V; PL = 175 W; Th = 25 °C; VCE = 28 V; PL = 175 W; Th = 25 °C;

class-B operation. class-B operation.

Fig.14 Load impedance (series components). Fig.15 Power gain.

August 1986 9
Philips Semiconductors Product specification

HF power transistor BLW97

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

q C
U1 B

H c
b
L
w2 M C
4 3
α
A

p U2 D1 U3

w1 M A B

1 2

0 5 10 mm

scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT A b c D D1 F H L p Q q U1 U2 U3 w1 w2 α

7.27 5.82 0.16 12.86 12.83 2.67 28.45 7.93 3.30 4.45 24.90 6.48 12.32
mm 18.42 0.51 1.02
6.17 5.56 0.10 12.59 12.57 2.41 25.52 6.32 3.05 3.91 24.63 6.22 12.06
45°
0.286 0.229 0.006 0.506 0.505 0.105 1.120 0.312 0.130 0.175 0.98 0.255 0.485
inches 0.725 0.02 0.04
0.243 0.219 0.004 0.496 0.495 0.095 1.005 0.249 0.120 0.154 0.97 0.245 0.475

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION

SOT121B 97-06-28

August 1986 10
Philips Semiconductors Product specification

HF power transistor BLW97

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

August 1986 11
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