TPUxx/SMTHDTxx

TRISIL
DISCRETE SOLUTION FOR ISDN PROTECTION

.
FEATURES
UNDIRECTIONAL CROWBAR

. PROTECTION.
PEAK PULSE CURRENT :

.. IPP = 75 A , 10/1000 µs.

HOLDING CURRENT = 150mA.
BREAKDOWN VOLTAGE:
TPU58/SMTHDT58 = 58V.
TPU80/SMTHDT80 = 80V.

. TPU120/SMTHDT120 = 120V.
PACKAGES:
TPUxx = AXIAL DIODE. CB429
(Plastic)
SOD15
(Plastic)
SMTHDTxx = SURFACE MOUNT PACKAGE.

DESCRIPTION: TRIBALANCED PROTECTION

Dedicated protection devices for ISDN LINE CARD FUNCTIONAL DIAGRAM.
and high speed data telecom lines.
A
Used with the recommended configuration using
3 components, they will provide =

- Dual bidirectionnal protection, with fixed

breakdown voltage in both common and
differential modes.
- Low capacitances from lines to ground.
- Very good capacitance balance : ∆C= 30 pF.
K
ABSOLUTE RATINGS (limiting values) (-40°C ≤ T amb ≤ +85°C)

Symbol Parameter Value Unit

IPP Peak pulse current 10/1000 µs 75 A

8/20 µs 150

ITSM Non repetitive surge peak on-state current tp = 20 ms 30 A

di/dt Critical rate of rise of on-state current Non repetitive 100 A/µs

dv/dt Critical rate of rise of off-state voltage 67% VBR 5 KV/µs

Tstg Storage and operating junction temperature range - 40 to + 150 °C

Tj + 150 °C

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-l) Junction-leads Thermal Resistance CB429 20 °C/W

SOD15 20 °C/W

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ELECTRICAL CHARACTERISTICS

Symbol Parameter
I
VRM Stand-off voltage IF

VBR Breakdown voltage

VBO VBR
VBO Breakover voltage
V RM VT VF
IH Holding current V
I RM
VT On-state voltage 1mA
IH
VF Forward Voltage Drop I BO
IT
IBO Breakover current
I PP
IPP Peak pulse current

PARAMETERS RELATED TO THE DIODE.

Parameter Test conditions Value Unit
VF IF = 5A, TP = 500 µs 5 V

PARAMETERS RELATED TO THE PROTECTION TRISIL.

Types IR @ VRM VBR @ IR VBO IBO IH VT C

max min max min max min max max

note1 note1 note1 note1 note2 note3

µA V V mA V mA mA mA V pF

TPU58/SMTHDT58 10 56 58 1 80 150 800 150 5 400

TPU80/SMTHDT80 10 68 80 1 120 150 800 150 5 250

TPU120/SMTHDT120 10 102 120 1 180 150 800 150 5 200

Al l parameters t ested at 25 °C, except where indicated.

Note 1 : See the reference test circuit for IH , I BO and V B O parameters.

Note 2 : Square pul se Tp = 500 µs - I T = 5A .
Note 3 : V R = 1V, F = 1MHz.

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REFERENCE TEST CIRCUIT FOR IH, IBO and VBO parameters :

Tp = 20ms
Auto
Transformer R1
220V/2A static 140
relay. R2
240

K
Vout V BO
220V

IBO , IH D.U.T
measure
measure

Transformer
220V/800V
5A

.
TEST PROCEDURE :
Pulse Test duration (Tp = 20ms):
- For Bidirectional devices = Switch K is closed

. - For Unidirectional devices = Switch K is open.

VOUT Selection
- Device with VBR ≤ 150 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBR ≥ 150 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.

FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT = GO - NOGO TEST.

25 15 Switch

A
20 F
D.U.T Vp =
220nF 50
Vbat = 48V 1KV
K

Surge Generator
10/700 sec
Vp =1KV / Ipp = 25A

This is a GO-NOGO Test which allows to confirm the holding current (I H) level in a functional test circuit.
This test can be performed if the reference test circuit can’t be implemented.

.
TEST PROCEDURE :
1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 25A , 10/700 µs.
3) The D.U.T will come back to the OFF-State within a duration of 50 ms max.

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APPLICATION NOTE

ISDN PROTECTION.

LINE A LINE A
A CA

3.TPUxx
or GND C

GND
3.SMTHDTxx

CB
B
LINE B LINE B

TRIPOLE PROTECTION FULL BALANCED PROTECTION

RECOMMENDED CONFIGURATION FOR TRIBALANCED PROTECTION MODE.

CAPACITANCE CHARACTERISTICS
Type CONFIGURATION CA CB ∆C
pF pF pF
LINE A LINE B Max Max Max
TPU58/SMTHDT58 48 0 80 60 30
TPU80/SMTHDT80 56 0 70 50 30
TPU120/SMTHDT120 110 0 70 50 30

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APPLICATION NOTE

Discrete ISDN Protection solution

LINE A
A

TRANSFORMER
3 TPUxx
or GND
3 SMTHDTxx

B
LINE B

EQUIVALENT PROTECTION FUNCTION

U Interface Protection S Interface Protection

A GND R or PTC
A R or PTC TPUxx
R or PTC
B

TPUxx GND
A
R or PTC
TPUxx
GND R or PTC
B R or PTC B

This topology assumes the same breakdown voltage level in positive and negative for differential or common
mode surge.

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ORDER CODE

T P U 80 RL SM THDT 80
Packaging:
RL = Tape and reel

Trisil Breakdown Surface Breakdown

Voltage Mount Voltage

Unidirectionnal Unidirectionnal

MARKING

Package Type Marking Package Type Marking

TPU58 TPU58 SMTHDT58 W01
CB429 TPU80 TPU80 SOD15 SMTHDT80 W03
TPU120 TPU120 SMTHDT120 W05
A white band indicates the cathode A white band indicates the cathode

PACKAGE MECHANICAL DATA

CB429 SOD15

L G L OD
LL1 L1 B C
note 1 note 1

O b2 O b2 A

a1

Ref Millimeters Inches Ref Millimeters Inches

min max min max min max min max
∅ b2 - 1.06 - 0.042 A 2.5 3.1 0.098 0.122
∅D - 5.1 - 0.20 a1 - 0.2 - 0.008
G - 9.8 - 0.386 B 2.9 3.1 0.114 0.122
L 26 - 1.024 - C 4.8 5.2 0.190 0.200
L1 - 1.27 - 0.050 D 7.6 8.0 0.300 0.315
E 6.3 6.6 0.248 0.259
note1: The diameter ∅ b2 is not controlled over zone L1. F 1.3 1.7 0.051 0.067

Packaging : Axial Diode CB429 = Products Supplied in Tape and Reel.

SOD15 =Standard packaging is in Film.

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

 1994 SGS-THOMSON Microelectronics - All Rights Reserved

Purchase of I2C Components by SGS-THOMSON Microelectronics, conveys a licence under the Philips
I2C Patent. Rights to use these components in an I2C system, is grantede provided that the system conforms to
the I2C Standard Specification as defined by Philips.

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