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Silicon Epitaxial Planar Transistor 2SC1815

This document provides specifications for the 2SC1815 silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of high voltage (50V), high current (150mA) performance, excellent hFE linearity, and low noise. - Maximum ratings for voltage, current, power, and temperature. - Electrical characteristics including breakdown voltages, cut-off currents, gain, saturation voltages, and transition frequency. - Typical characteristic curves showing relationships between current and voltage parameters. - Package outline details and shipping/packaging information for the SOT-23 surface mount package.

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Jose Eduardo Sanchez Larreta
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68 views5 pages

Silicon Epitaxial Planar Transistor 2SC1815

This document provides specifications for the 2SC1815 silicon epitaxial planar transistor from BL Galaxy Electrical, including: - Key features of high voltage (50V), high current (150mA) performance, excellent hFE linearity, and low noise. - Maximum ratings for voltage, current, power, and temperature. - Electrical characteristics including breakdown voltages, cut-off currents, gain, saturation voltages, and transition frequency. - Typical characteristic curves showing relationships between current and voltage parameters. - Package outline details and shipping/packaging information for the SOT-23 surface mount package.

Uploaded by

Jose Eduardo Sanchez Larreta
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC1815

FEATURES
Pb
z High voltage and high current
Lead-free
VCEO=50V(Min),IC=150mA(Max)
z Excellent hFE linearity : hFE(2)=100 (Typ) at VCE=6V,IC=150mA
hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ))
z Low noise.
z Complementary to 2SA1015.
SOT-23
APPLICATIONS
z Audio frequency general

ORDERING INFORMATION
Type No. Marking Package Code

2SC1815 HF SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 50 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 150 mA

PC Collector Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTC019 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC1815

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IC=0.1mA,IC=0 5 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA

Collector cut-off current ICEO VCE=50V,IB=0 0.1 μA

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

DC current gain hFE VCE=6V,IC=2mA 130 400

Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.1 0.25 V

Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V

VCE=10V, IC= 1mA


Transition frequency fT 80 MHz
f=30MHz

CLASSIFICATION OF hFE(1)
Rank L H

Range 130-200 200-400

Document number: BL/SSSTC019 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC1815

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC019 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Epitaxial Planar Transistor 2SC1815

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

2SC1815 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC019 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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