NPN SILICON HIGH

NE661M04
FREQUENCY TRANSISTOR

FEATURES

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• HIGH GAIN BANDWIDTH: fT = 25 GHz
• HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz
• LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz

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• HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz

• NEW LOW PROFILE M04 PACKAGE:

SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.

DESCRIPTION M04
NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz fT

IN
wafer process. With a typical transition frequency of 25 GHz
the NE661M04 is usable in applications from 100 MHz to 10
GHz. The NE661M04 provides excellent low voltage/low cur-
rent performance.

NEC's new low profile/flat lead style "M04" package is ideal for
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today's portable wireless applications. The NE661M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

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PART NUMBER NE661M04

EIAJ1 REGISTERED NUMBER 2SC5507
PACKAGE OUTLINE M04
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
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ICBO Collector Cutoff Current at VCE = 5 V, IE = 0 µA 0.1

DC

IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1

hFE Forward Current Gain2 at VCE = 2 V, IC = 5 mA 50 70 100
fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 20 25
MSG Maximum Stable Gain4 at VCE = 2 V, IC = 5 mA, f = 2 GHz dB 22
|S21E|2 Insertion Power Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz dB 14 17
NF Noise Figure at VCE = 2 V, IC = 2 mA, f = 2 GHz, ZIN = ZOPT dB 1.2 1.5
RF

P1dB Output Power at 1 dB compression point at

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VCE = 2 V, IC = 5 mA, f = 2 GHz dBm 5

IP3 Third Order Intercept Point at VCE = 2 V, IC = 5 mA, f = 2 GHz dBm 15
Cre Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz pF 0.08 0.12

Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S21
S12

California Eastern Laboratories

NE661M04

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) TYPICAL NOISE PARAMETERS (TA = 25˚C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 15 FREQ. NFOPT GA ΓOPT
(GHz) (dB) (dB) MAG ANG Rn/50
VCEO Collector to Emitter Voltage V 3.3
VEBO Emitter to Base Voltage V 1.5 VC = 1 V, IC = 1 mA
IC Collector Current mA 12 0.50 1.08 21.40 0.67 13 0.60
0.90 1.13 18.90 0.64 31 0.64
PT Total Power Dissipation mW 39 1.00 1.14 18.40 0.64 33 0.64

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TJ Junction Temperature °C 150 1.50 1.20 15.70 0.63 43 0.64
2.00 1.29 14.20 0.62 50 0.62
TSTG Storage Temperature °C -65 to +150 2.50 1.40 13.20 0.61 59 0.55
Note: 3.00 1.55 12.50 0.60 67 0.45
1. Operation in excess of any one of these parameters may result VC = 2 V, IC = 1 mA

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in permanent damage.
0.50 1.12 21.70 0.69 13 0.57
0.90 1.15 19.50 0.66 26 0.56
1.00 1.16 19.10 0.65 30 0.55
1.50 1.23 16.50 0.64 37 0.69
THERMAL RESISTANCE 2.00 1.32 14.70 0.64 46 0.68
ITEM SYMBOL VALUE UNIT 2.50 1.45 13.90 0.63 60 0.55
3.00 1.60 13.30 0.62 69 0.52
Junction to Case Resistance Rth j-c 240 °C/W VC = 2 V, IC = 5 mA
Junction to Ambient Resistance Rth j-a 650 °C/W
0.50 1.69 27.41 0.41 14 0.60

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0.90 1.70 23.80 0.41 30 0.64
1.00 1.70 23.00 0.41 34 0.64
1.50 1.72 20.24 0.40 40 0.64
2.00 1.75 17.93 0.39 47 0.62
2.50 1.79 16.77 0.38 55 0.55
3.00 1.85 16.30 0.36 64 0.45

TYPICAL OPTIMAL NOISE MATCHING (TA = 25˚C)

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VC = 1 V, lC = 1 mA VC = 2 V, lC = 1 mA
1.0 1.0

0.5 2.0 0.5 2.0

ΓOPT ΓOPT

0.2 5.0 0.2 5.0

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0 0.2 0.5 1.0 2.0 5.0 0 0 0.2 0.5 1.0 2.0 5.0 0

-0.2 -5.0 -0.2 -5.0

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-0.5 -2.0 -0.5 -2.0

-1.0 -1.0

VC = 2 V, lC = 5 mA
1.0

0.5 2.0
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0.2 ΓOPT 5.0

0 0.2 0.5 1.0 2.0 5.0 0

-0.2 -5.0

-0.5 -2.0

-1.0
 NE661M04

TYPICAL PERFORMANCE CURVES (TA = 25°C)

DC POWER DERATING CURVES COLLECTOR CURRENT
vs. DC BASE VOLTAGE
100 50
VCE = 2 V
Total Power Dissipation, PT (mW)

40

Collector Current, IC (mA)

75

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Device Mounted
on a Ceramic 30
PCB
50

20

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25
Free Air 10

0
50 100 117 134 150 0 0.2 0.4 0.6 0.8 1.0 1.2

Ambient Temperature, TA (°C) DC Base Voltage, VBE (V)

COLLECTOR CURRENT vs. FORWARD CURRENT GAIN

IN
COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR GAIN
10 100
140 µA

DC Forward Current Gain, hFE

120 µA
8
Collector Current, Ic (mA)

80
100 µA
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6 80 µA

60
60 µA
4
40 µA
40
20 µA
2

IB = 5 µA
20
0 1.0 2.0 3.0 0 2 4 6 8 10
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Collector Current, IC (mA)

Collector to Emitter Voltage, VCE (V)
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REVERSE TRANSFER CAPACITANCE GAIN BANDWIDTH PRODUCT

vs. COLLECTOR BASE VOLTAGE vs. COLLECTOR CURRENT

0.30 30
Reverse Transfer Capacitance, Cre (pF)

VCE = 3 V
f = 1 MHz f = 2 GHz
Gain Bandwidth Product, fT (GHz)

0.25 25

0.20 20
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0.15 15

0.10 10

0.05 5

0
0 1.0 2.0 3.0 4.0 5.0 1 10 100
Collector to Base Voltage, VCB (V) Collector Current, IC (mA)
NE661M04

TYPICAL PERFORMANCE CURVES (TA = 25°C)

NOISE FIGURE vs. FREQUENCY NOISE FIGURE vs. FREQUENCY
1.8 1.8

VDS = 1 V VDS = 2 V
ID = 1 mA ID = 1 mA

Associated Gain, GA (dB)

Noise Figure, NF (dB)
1.6 25

Associated Gain, GA (dB)

1.6 25
Noise Figure, NF (dB)

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GA GA

1.4 20 1.4 20

NF NF

1.2 15 1.2 15

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1.0 10 1.0 10

0.8 5 0.8 5
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5

Frequency, f (GHz) Frequency, f (GHz)

INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER

IN
NOISE FIGURE vs. FREQUENCY GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY

Maximum Available Power Gain MAG (dB)

1.86 40

Maximum Stable Power Gain MSG (dB)

1.84
Insertion Power Gain |S21e|2, (dB) VCE = 2 V
35
IC = 5 mA
Associated Gain, GA (dB)

1.82 30
Noise Figure, NF (dB)

GA 30 MSG
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1.80 25
25
1.78 20
MAG
20
1.76 15
NF
|S21e|2
1.74
15
10

1.72 5 10

1.70 VDS = 2 V 0 5
ID = 5 mA
1.68 0
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0 0.5 1 1.5 2 2.5 3 3.5 0.1 1.0 10.0

Frequency, f (GHz) Frequency, f (GHz)
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INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER

GAIN, MAXIMUM STABLE POWER GAIN vs. OUTPUT, COLLECTOR CURRENT vs.
COLLECTOR CURRENT INPUT POWER

10 25
Maximum Available Power Gain MAG (dB)

30
Maximum Stable Power Gain MSG (dB)

f = 2 GHz f = 2 GHz
Pout
Insertion Power Gain |S21e|2, (dB)

VCE = 2 V VCE = 2 V
25 MAG 5 20
Output Power, Pout (dBm)

MSG
20
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0 15

15 |S21e|2
–5 10
10 IC

–10 5
5

0 –15 0
1 10 100 –30 –25 –20 –15 –10 –5
Collector Current, IC (mA) Input Power, Pin (dBm)
 NE661M04

TYPICAL SCATTERING PARAMETERS (TA = 25˚C)

+90˚
j50
+120˚ +60˚
j25 j100

+150˚ +30˚

j10
8 GHz
S21
S12 0.1 GHz

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0 10 25 50 100 S11 +180˚ 0.1 GHz +0˚
S22 8 GHz
0.1 GHz 0.1 GHz
8 GHz

-j10
8 GHz -30˚
-150˚

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-j25 - j100
-120˚ -60˚

-j50 Coordinates in Ohms -90˚

Frequency in GHz
(VCE = 1 V, IC = 1 mA)

VC = 1 V, IC = 1 mA
FREQUENCY S11 S21 S12 S22 K MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 0.944 -4.3 2.912 172.0 0.005 84.9 0.991 -4.3 0.15 27.53

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0.20 0.943 -8.0 2.868 171.3 0.009 77.9 0.970 -7.6 0.22 24.88
0.30 0.941 -11.9 2.845 168.3 0.013 75.1 0.955 -10.2 0.22 23.30
0.40 0.939 -15.4 2.837 164.2 0.017 73.0 0.943 -12.8 0.23 22.21
0.50 0.935 -19.2 2.845 160.7 0.021 70.8 0.935 -15.2 0.22 21.37
0.70 0.930 -26.7 2.807 153.5 0.028 66.3 0.922 -19.9 0.22 20.00
1.00 0.916 -37.4 2.734 144.1 0.038 59.6 0.906 -26.7 0.22 18.57
1.50 0.862 -55.4 2.614 126.2 0.051 46.5 0.850 -37.3 0.39 17.08
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2.00 0.807 -72.7 2.526 110.8 0.061 36.2 0.821 -46.6 0.49 16.16
2.50 0.755 -89.4 2.337 96.3 0.068 26.8 0.794 -55.1 0.61 15.38
3.00 0.693 -106.9 2.236 82.4 0.071 18.3 0.768 -62.8 0.75 14.96
3.50 0.636 -124.7 2.095 68.9 0.072 10.7 0.744 -70.1 0.92 14.61
4.00 0.585 -143.5 1.977 55.6 0.071 4.5 0.723 -77.2 1.11 12.45
5.00 0.515 178.7 1.746 30.4 0.066 -2.9 0.696 -91.7 1.53 9.96
6.00 0.489 143.2 1.521 6.9 0.061 -1.9 0.689 -106.9 1.89 8.49
7.00 0.480 109.3 1.325 -14.4 0.066 0.9 0.688 -119.9 2.05 7.22
8.00 0.495 75.6 1.155 -34.5 0.076 2.0 0.679 -131.9 2.04 5.98
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Note:
1. Gain Calculation:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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NE661M04
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)
j50
+90˚
j25 j100 +120˚ +60˚

+150˚ +30˚
j10

S12

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12 GHz
25
S21 0.1 GHz
10 50 100
0 S11 0.1 GHz
12 GHz S22 +180˚ +0˚
0.1 GHz
0.1 GHz
12 GHz 12 GHz

-j10
-30˚
-150˚

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-j25 -j100
Coordinates in Ohms -120˚ -60˚

-j50 Frequency in GHz -90˚

(VCE = 2 V, IC = 1 mA)

VC = 2 V, IC = 1 mA
FREQUENCY S11 S21 S12 S22 K MAG1
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)

IN
0.10 0.946 -4.2 2.929 172.1 0.005 84.2 0.992 -4.2 0.16 28.12
0.20 0.945 -7.7 2.882 171.5 0.008 76.7 0.971 -7.4 0.25 25.51
0.30 0.943 -11.6 2.860 168.6 0.012 74.8 0.956 -10.0 0.24 23.91
0.40 0.941 -14.9 2.853 164.6 0.015 72.6 0.944 -12.4 0.25 22.79
0.50 0.938 -18.6 2.861 161.2 0.018 70.6 0.937 -14.7 0.24 21.95
0.70 0.933 -25.9 2.825 154.2 0.025 66.5 0.924 -19.3 0.23 20.61
1.00 0.921 -36.3 2.756 145.0 0.033 60.4 0.909 -25.9 0.23 19.19
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1.50 0.869 -53.9 2.643 127.4 0.045 47.8 0.856 -36.2 0.40 17.72
2.00 0.816 -70.7 2.563 112.3 0.053 38.1 0.829 -45.2 0.50 16.82
2.50 0.765 -87.0 2.377 98.0 0.059 29.2 0.805 -53.4 0.62 16.05
3.50 0.647 -121.6 2.142 70.9 0.063 14.4 0.759 -68.1 0.94 15.33
3.00 0.703 -104.1 2.281 84.2 0.062 21.3 0.781 -60.9 0.76 15.65
4.00 0.593 -139.9 2.027 57.7 0.062 9.4 0.740 -75.2 1.14 12.87
5.00 0.518 -177.4 1.799 32.7 0.057 4.6 0.716 -89.6 1.58 10.51
6.00 0.485 147.0 1.573 9.1 0.056 8.2 0.711 -104.7 1.86 9.10
7.00 0.472 112.6 1.372 -12.2 0.064 11.0 0.711 -117.7 1.89 7.86
8.00 0.483 78.3 1.197 -32.2 0.078 10.5 0.704 -129.7 1.82 6.62
9.00 0.541 49.9 1.039 -51.0 0.098 4.2 0.700 -142.3 1.56 5.85
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10.00 0.604 28.4 0.914 -67.6 0.120 -3.8 0.697 -154.8 1.30 5.53
11.00 0.653 10.2 0.821 -84.2 0.144 -15.4 0.698 -169.7 1.07 5.90
12.00 0.691 -7.9 0.734 -101.2 0.168 -29.3 0.693 173.1 0.96 6.41

Note:
1. Gain Calculation:
SC

, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12

|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
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 NE661M04
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)

j50 +90˚

+120˚ +60˚
j25 j100

+150˚ +30˚
j10

D
18 GHz
S12
0.1 GHz
S11 S21
10 25 50 100 +180˚ 18 GHz +0˚
0 0.1 GHz 0.1 GHz
S22
0.1 GHz

18 GHz

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-j10
-150˚ -30˚

-j25 18 GHz -j100 -60˚

-120˚
Coordinates in Ohms
-90˚
-j50 Frequency in GHz
(VCE = 2 V, IC = 5 mA)

VC = 2 V, IC = 5 mA
FREQUENCY S11 S21 S12 S22 K MAG1

IN
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.10 0.823 -5.3 10.113 172.3 0.004 81.5 0.979 -5.1 0.27 34.04
0.20 0.816 -11.4 9.907 167.9 0.008 75.6 0.954 -9.1 0.32 31.13
0.30 0.807 -17.0 9.734 163.0 0.011 72.1 0.933 -12.5 0.34 29.55
0.40 0.797 -22.0 9.571 158.1 0.014 70.1 0.916 -15.5 0.34 28.41
0.50 0.784 -27.2 9.433 153.3 0.017 67.9 0.902 -18.5 0.35 27.54
0.70 0.757 -37.1 9.037 144.0 0.022 63.3 0.873 -23.9 0.37 26.18
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1.00 0.710 -51.0 8.386 131.4 0.029 57.0 0.836 -31.3 0.43 24.69
1.50 0.592 -71.5 7.208 111.1 0.036 47.3 0.748 -41.2 0.67 23.00
2.00 0.498 -89.6 6.429 95.0 0.042 41.5 0.704 -49.1 0.83 21.77
2.50 0.417 -106.7 5.446 80.7 0.046 37.6 0.672 -55.9 0.98 20.73
3.00 0.345 -124.2 4.809 67.8 0.050 34.7 0.649 -62.1 1.11 17.80
3.50 0.289 -143.0 4.283 55.9 0.054 32.2 0.631 -68.0 1.23 16.15
4.00 0.249 -163.9 3.862 44.7 0.058 30.0 0.619 -74.1 1.30 14.95
5.00 0.221 153.2 3.218 23.5 0.067 25.3 0.606 -87.3 1.37 13.17
6.00 0.235 117.2 2.732 3.3 0.078 19.5 0.614 -101.9 1.35 11.92
7.00 0.255 84.3 2.369 -15.7 0.090 11.9 0.621 -114.5 1.31 10.86
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8.00 0.298 53.7 2.074 -33.9 0.101 3.5 0.622 -125.8 1.30 9.84
9.00 0.371 32.9 1.834 -51.5 0.114 -5.1 0.625 -138.3 1.20 9.31
10.00 0.439 18.4 1.657 -67.9 0.130 -13.2 0.624 -150.4 1.08 9.33
11.00 0.497 5.3 1.521 -85.1 0.149 -23.8 0.625 -165.1 0.93 10.10
12.00 0.547 -9.8 1.395 -103.4 0.167 -36.4 0.622 178.1 0.83 9.22
13.00 0.597 -26.5 1.269 -121.9 0.185 -50.4 0.606 162.0 0.76 8.37
SC

14.00 0.648 -42.6 1.147 -140.2 0.193 -64.4 0.575 146.0 0.76 7.73
15.00 0.693 -53.5 1.041 -158.0 0.204 -77.1 0.522 127.4 0.77 7.08
16.00 0.732 -64.5 0.963 -176.4 0.221 -91.0 0.488 106.8 0.71 6.39
17.00 0.758 -77.4 0.864 163.2 0.230 -107.7 0.434 79.8 0.77 5.75
18.00 0.787 -89.6 0.756 144.0 0.230 -122.4 0.368 52.7 0.88 5.16

Note:
1. Gain Calculation:
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S21| |S21| 2 2 2
MAG = (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S12| |S12| 2 |S12 S21|
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MAG = Maximum Available Gain

MSG = Maximum Stable Gain
NE661M04

OUTLINE DIMENSIONS (Units in mm) ORDERING INFORMATION

PART NUMBER QUANTITY PACKAGING
PACKAGE OUTLINE M04 NE661M04-T2-A 3000 Tape & Reel
2.05±0.1

1.25±0.1
+0.1
0.40-0.06
2 3

D
2.0 ±0.1 1.25
0.60

0.65
T78 0.65

0.65
1.30

1 4

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+0.1
0.30-0.05
(Leads 1, 3, 4)

0.59±0.05
0.11 +0.1
-0.08

PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter

IN
4. Base
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SC
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 NE661M04

NONLINEAR MODEL

CCBPKG
SCHEMATIC
CCB

D
LC LCX
LBX LB Collector
Base CCE

UE
CCEPKG
CBEPKG LE

LEX

Emitter

BJT NONLINEAR MODEL PARAMETERS (1) ADDITIONAL PARAMETERS

IN
Parameters Q1 Parameters Q1 Parameters NE661M04
IS 2.2e-18 MJC 0.33 CCB 0.08e-12
BF 120 XCJC 1 CCE 0.1e-12
NF 1 CJS 0 LB 0.93e-9
VAF 39.7 VJS 0.75 LC 0.6e-9
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IKF 0.21 MJS 0 LE 0.2e-9
ISE 4.64e-14 FC 0.5 CCBPKG 0.001e-12
NE 2.09 TF 2e-12 CCEPKG 0.25e-12
BR 10 XTF 20 CBEPK 0.2e-12
NR 1.004 VTF 10 LBX 0.2e-9
VAR 1.9 ITF 0.1 LCX 0.2e-9
IKR 0.1 PTF 200 LEX 0.05e-9
ISC 1.1e-11 TR 1e-11
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NC 41 EG 1.11 MODEL RANGE

RE 3.5 XTB 0 Frequency: 0.1 to 18 GHz
Bias: VCE = 0.5 V to 2.5 V, IC = 1 mA to 7 mA
RB 14 XTI 3 Date: 02/2002
RBM 14 KF 0
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IRB 0.004 AF 1
RC 8
CJE 0.3e-12
VJE 0.5
MJE 0.33
CJC 0.001e-12
VJC 0.75
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(1) Gummel-Poon Model

Life Support Applications

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.

EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM
01/03/2002
 4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279

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Subject: Compliance with EU Directives

UE
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.

IN
All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.

Restricted Substance Concentration Limit per RoHS Concentration contained

NT
per RoHS (values are not yet fixed) in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM
Not Detected (*)
Mercury < 1000 PPM Not Detected

Cadmium < 100 PPM Not Detected

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Hexavalent Chromium < 1000 PPM Not Detected

PBB < 1000 PPM Not Detected

PBDE < 1000 PPM Not Detected

SC

If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.

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content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
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information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
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release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.