SBL2030PT, SBL2040PT

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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
3 • High frequency operation
2
1 • Solder dip 275 °C max., 10 s, per JESD 22-B106
TO-247AD (TO-3P) • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 1 PIN 2

PIN 3 CASE
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV) 20 A MECHANICAL DATA
VRRM 30 V, 40 V Case: TO-247AD (TO-3P)
IFSM 250 A Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VF 0.55 V
Terminals: Matte tin plated leads, solderable per
TJ max. 125 °C
J-STD-002 and JESD 22-B102
Package TO-247AD (TO-3P) E3 suffix meets JESD 201 class 1A whisker test
Diode variations Common cathode Polarity: As marked
Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SBL2030PT SBL2040PT UNIT
Maximum repetitive peak reverse voltage VRRM 30 40 V
Maximum RMS voltage VRWM 21 28 V
Maximum DC blocking voltage VDC 30 40 V
Maximum average forward rectified current (fig. 1) IF(AV) 20 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 250 A
superimposed on rated load per diode
Operating junction and storage temperature range TJ, TSTG - 40 to + 125 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS SBL2030PT SBL2040PT UNIT
Maximum instantaneous forward voltage
VF (1) 10 A 0.55 V
per diode
Maximum instantaneous reverse current at TC = 25 °C 1.0 mA
IR (1)
rated DC blocking voltage per diode TC = 100 °C 50 mA
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 12-Jun-13 1 Document Number: 88728

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SBL2030PT SBL2040PT UNIT
Thermal resistance, junction to case per diode RJC 1.5 °C/W

ORDERING INFORMATION (Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD SBL2030PT-E3/45 6.13 45 30/tube Tube

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

25 100
Resistive or Inductive Load

Instantaneous Forward Current (A)

22.5
TJ = 125 °C
Average Forward Current (A)

20
10 Pulse Width = 300 µs
17.5 1 % Duty Cycle

15 TJ = 25 °C
12.5 1

10

7.5
0.1
5

2.5

0 0.01
0 50 100 150 0 0.2 0.4 0.6 0.8 1.0 1.2
Case Temperature (°C) Instantaneous Forward Voltage (V)

Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

300 100
Instantaneous Reverse Current (mA)

TJ = TJ Max.
Peak Forward Surge Current (A)

250 8.3 ms Single Half Sine-Wave

10
TJ = 125 °C
200
1

150 TJ = 75 °C

0.1
100

0.01 TJ = 25 °C
50

0 0.001
1 10 100 0 20 40 60 80 100
Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics Per Diode
Per Diode

Revision: 12-Jun-13 2 Document Number: 88728

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay General Semiconductor

10 000 100
TJ = 25 °C

Transient Thermal Impedance (°C/W)

f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)

10

1000

100 0.1
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Pulse Duration (s)

Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

TO-247AD (TO-3P)
0.245 (6.2) 0.645 (16.4) 0.203 (5.16)
0.225 (5.7) 0.625 (15.9) 0.193 (4.90)
0.323 (8.2) 0.078 (1.98) REF.
0.313 (7.9)
30° 10

0.170
(4.3)
10° TYP.
0.840 (21.3) Both Sides
0.142 (3.6)
0.820 (20.8)
0.138 (3.5)

1 2 3 1° REF.
Both Sides
0.086 (2.18)
0.076 (1.93)
0.118 (3.0)
0.127 (3.22)
0.160 (4.1) 0.108 (2.7)
0.117 (2.97)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)

0.225 (5.7) 0.048 (1.22) 0.030 (0.76)

0.205 (5.2) 0.044 (1.12) 0.020 (0.51)

PIN 1 PIN 2

PIN 3 CASE

Revision: 12-Jun-13 3 Document Number: 88728

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 08-Feb-17 1 Document Number: 91000