Scribd
Upload
180 views2 pages

BUZ11 N-Channel MOSFET Specs

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ11. It has a maximum static drain-source on-resistance of 0.04 ohms. It is designed for applications requiring high speed and low gate drive power such as switching regulators and motor drivers. Key absolute maximum ratings include a drain-source voltage of 50V, gate-source voltage of ±20V, and continuous drain current of 30A.

Uploaded by

Kann das sein
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
180 views2 pages

BUZ11 N-Channel MOSFET Specs

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor BUZ11. It has a maximum static drain-source on-resistance of 0.04 ohms. It is designed for applications requiring high speed and low gate drive power such as switching regulators and motor drivers. Key absolute maximum ratings include a drain-source voltage of 50V, gate-source voltage of ±20V, and continuous drain current of 30A.

Uploaded by

Kann das sein
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor BUZ11

DESCRIPTION
·Static Drain-Source On-Resistance
: RDS(on) = 0.04Ω(Max)
·SOA is Power Dissipation Limited
·High input impedance

APPLICATIONS
designed for applications such as switching regulators,
switching converters, motor drivers,relay drivers and
drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 50 V

VGS Gate-Source Voltage ±20 V

ID Drain Current-continuous@ TC=37℃ 30 A

Ptot Total Dissipation@TC=25℃ 75 W

Tj Max. Operating Junction Temperature -55~150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn


INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor BUZ11

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 50 V

VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA 2.1 4 V

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 15A 0.04 Ω

IGSS Gate Source Leakage Current VGS= 20V;VDS= 0 100 nA

IDSS Zero Gate Voltage Drain Current VDS= 50V; VGS= 0 250 uA

VSD Diode Forward Voltage IF= 60A; VGS= 0 2.6 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn

You might also like