IRFIBE30G, SiHFIBE30G

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
• Isolated Package
VDS (V) 800
RDS(on) (Ω) VGS = 10 V 3.0
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available

f = 60 Hz) RoHS*
Qg (Max.) (nC) 78 COMPLIANT
• Sink to Lead Creepage Distance = 4.8 mm
Qgs (nC) 9.6
Qgd (nC) 45
• Dynamic dV/dt Rating
Configuration Single • Low Thermal Resistance
• Lead (Pb)-free Available
D
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
G ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
S The moulding compound used provides a high isolation
G D S capability and a low thermal resistance between the tab and
N-Channel MOSFET
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.

ORDERING INFORMATION
Package TO-220 FULLPAK
IRFIBE30GPbF
Lead (Pb)-free
SiHFIBE30G-E3
IRFIBE30G
SnPb
SiHFIBE30G

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 800
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 2.1
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 1.4 A
Pulsed Drain Currenta IDM 8.4
Linear Derating Factor 0.28 W/°C
Single Pulse Avalanche Energyb EAS 240 mJ
Avalanche Currenta IAR 2.1 A
Repetitive Avalanche Energya EAR 3.5 mJ
Maximum Power Dissipation TC = 25 °C PD 35 W
Peak Diode Recovery dV/dtc dV/dt 2.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 102 mH, RG = 25 Ω, IAS = 2.1 A (see fig. 12).
c. ISD ≤ 4.1 A, dI/dt ≤ 100 A/µs, VDD ≤ 600 V, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91184 www.vishay.com

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IRFIBE30G, SiHFIBE30G
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 65
°C/W
Maximum Junction-to-Case (Drain) RthJC - 3.6

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 800 - - V
VDS Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.90 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 800 V, VGS = 0 V - - 100
Zero Gate Voltage Drain Current IDSS µA
VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 500
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.3 Ab - - 3.0 Ω
Forward Transconductance gfs VDS = 50 V, ID = 1.3 Ab 1.7 - - S
Dynamic
Input Capacitance Ciss - 1300 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 310 -
f = 1.0 MHz, see fig. 5 pF
Reverse Transfer Capacitance Crss - 190 -
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Qg - - 78
ID = 4.1 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 9.6 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 45
Turn-On Delay Time td(on) - 12 -
Rise Time tr VDD = 400 V, ID = 4.1 A, - 33 -
RG = 12 Ω, RD= 95 Ω, ns
Turn-Off Delay Time td(off) see fig. 10b - 82 -
Fall Time tf - 30 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Drain-Source Body Diode Characteristics

MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 2.1
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S - - 8.4

Body Diode Voltage VSD TJ = 25 °C, IS = 2.1 A, VGS = 0 Vb - - 1.8 V

Body Diode Reverse Recovery Time trr - 480 720 ns
TJ = 25 °C, IF = 4.1 A, dI/dt = 100 A/µsb
Body Diode Reverse Recovery Charge Qrr - 1.8 2.7 µC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com Document Number: 91184

2 S-81352-Rev. A, 16-Jun-08
 IRFIBE30G, SiHFIBE30G
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91184 www.vishay.com

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IRFIBE30G, SiHFIBE30G
Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91184

4 S-81352-Rev. A, 16-Jun-08
 IRFIBE30G, SiHFIBE30G
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
RG D.U.T +
V DD
- VDS
I AS
10 V
tp 0.01 Ω
IAS

Fig. 9a - Unclamped Inductive Test Circuit Fig. 9b - Unclamped Inductive Waveforms

Fig. 9c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ

VGS 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 10a - Basic Gate Charge Waveform Fig. 10b - Gate Charge Test Circuit

Document Number: 91184 www.vishay.com

S-81352-Rev. A, 16-Jun-08 5
IRFIBE30G, SiHFIBE30G
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

RG • dV/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 11 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91184.

www.vishay.com Document Number: 91184

6 S-81352-Rev. A, 16-Jun-08
 Legal Disclaimer Notice
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Revision: 08-Feb-17 1 Document Number: 91000