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3 - 1 Logic Family

This document discusses different logic families used in digital integrated circuits. It describes the characteristics of logic families such as logic levels, noise immunity, propagation delay, fan-in, fan-out and power dissipation. Specific logic families covered include TTL, MOSFET and CMOS. TTL uses bipolar junction transistors and can be configured as open collector, totem-pole or tristate gates. MOSFETs can be NMOS or PMOS depending on whether they are enhanced or depleted. CMOS combines both NMOS and PMOS transistors in complementary configurations to provide low power operation.

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Viji Ragesh
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0% found this document useful (0 votes)
117 views26 pages

3 - 1 Logic Family

This document discusses different logic families used in digital integrated circuits. It describes the characteristics of logic families such as logic levels, noise immunity, propagation delay, fan-in, fan-out and power dissipation. Specific logic families covered include TTL, MOSFET and CMOS. TTL uses bipolar junction transistors and can be configured as open collector, totem-pole or tristate gates. MOSFETs can be NMOS or PMOS depending on whether they are enhanced or depleted. CMOS combines both NMOS and PMOS transistors in complementary configurations to provide low power operation.

Uploaded by

Viji Ragesh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Logic Family

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.1 Introduction
• Logic gates are electronic circuits  constructed out of
electronic components and fabricated as ICs.
• Resistor, diode, transistor(BJT), mosfet etc.
• Specific components used  circuit technology.
• Digital ICs may be classified into various logic families
according to the circuit technology :

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


1. Resistor – Transistor Logic (RTL)
2. Diode – Transistor Logic (DTL)
3. Transistor – Transistor Logic (TTL)
4. Emitter Coupled Logic (ECL)
5. MOS Logic
6. CMOS Logic
7. Integrated Injection Logic (I2L)

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.2 Characteristics of Logic families
1. Logic level
• Binary logic has only 2 values : High & Low (1 & 0)
• Two different analog voltages represent them.
• If higher value represents HIGH & lower one for LOW,
the system is positive logic. (eg. 5V for 1 & 0V for 0).
• If lower value represents HIGH & higher one for LOW,
the system is negative logic. (eg. 0V for 1 & 5V for 0).
• Eventhough logic levels are specific values, a voltage
range is practically used to represent logic 1 & 0.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


Logic 1
Logic 1 VOH
VIH [under Positive
logic concept]

VIL VOL
Logic 0 Logic 0

• VIH  minimum voltage required at the input to


be considered as logic 1.
• VIL  maximum voltage at the input upto which it
will be considered as logic 0.
• VOH  minimum voltage that may appear at the
output under logic 1 state.
• VOL  maximum voltage that may appear at the
output under logic 0 state.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
2. Noise immunity
• The ability of a logic circuit to withstand the noise
without affecting its output  i.e. how much noise
voltage it can accommodate.
• Noise margin is calculated considering both input side
and output side voltage ranges.

Logic 1 VNH
High state NM,
Logic 1
VNH = VOH – VIH
Low state NM,
VNL = VIL – VOL
VNL Logic 0
Logic 0
NM = min (VNH, VNL)

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3 Propagation delay
• Time taken by the circuit to respond to a change in the
input  time difference between application of an
input and appearance of corresponding output.

tPLH  propagation delay in going from Low to High in


response to a change in input.
tPHL  propagation delay in going from High to Low in
response to a change in input.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
4 Fan-in
• Number of inputs of a logic gate  NOT gate has a fan-
in of 1, XOR has 2, 4 input OR has 4 etc.
• Higher the Fan-in, slower the gate operation.
• i.e. 4 input OR gate works slower than 2 input OR gate.
5 Fan-out
• Maximum number of gate inputs that the output of a
logic gate can drive maintaining the output levels.
• More and more current will be drawn through the
output terminal as the number of connected gate
inputs increases.
• Propagation delay also increases with each connected
input.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
6 Power dissipation
• Electrical energy consumed by the logic gate in a
specific period of time.
• Product of supply voltage and average current drawn
from the supply.
7 Speed-power product
• It is the product of propagation delay and power
dissipation of a logic gate  is a figure of merit.
• Smaller the product, better is the logic gate.
• It is expressed in Joules.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.3 TTL family
• Uses BJTs to perform logic operations & amplification.
• High switching speed, less noise and high current
capability.

• NAND gate is the basic building block.


• TTL gates can be constructed with different output
configurations :
1. Open collector, 2. Totem-pole, 3. Tristate
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.3.1 TTL NAND gate in open collector configuration
• Q1 is a multi-emitter transistor
& i/ps applied to its emitters.
• A resistor is to be externally
connected at the collector of Q3
to +Vcc  pull-up resistor.

• When both i/ps are high  Q1 OFF  high voltage at


its collector  Q2 is ON  high voltage across R3  Q3
is ON  low collector voltage  i.e. low output.
• When any one i/p is low  Q1 is ON  low voltage at
collector  Q2 is OFF  low voltage across R3  Q3 is
OFF  high collector voltage  i.e. high o/p.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
• Advantage  suitable for wired logic function.
• Disadvantage  pull-up resistor is in KΩ range 
causes slow switching operation.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.3.2 TTL NAND gate in totem-pole configuration
• External pull-up resistor replaced
by totem-pole connection of
Q3 & Q4  active pull-up.
• When both i/ps are high 
Q1 OFF  high voltage at
collector  Q2 is ON  low
collector voltage & high emitter
Voltage  Q4 OFF & Q3 ON  output Y is LOW.
• When any one i/p is low  Q1 ON  low voltage at
collector  Q2 is OFF  high collector voltage & low
emitter voltage  Q4 ON & Q3 OFF output Y is HIGH.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


• Advantage  low output impedance when output
is logic 1  faster switching.
• Disadvantage  decreased voltage level for logic 1
 not more than 3.5V.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.3.3 TTL NAND gate in tristate configuration
• Tristate gate  logic gate with three possible state
values  0, 1 & Z.
• Z means High Impedance state  neither 1 nor 0.
• Tristate TTL NAND gate has an additional enable
input  if enable = logic 1, output is 1 or 0
according to values of A & B  If enable = logic 0,
output is Z.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


• With e=1, D2 is disabled
 circuit behaves like a
totem-pole NAND gate.
• Then, If both A & B high,
o/p is low.
• If either or both of A &B
low, o/p is high.
• With e = 0, D2 is ON,
T3 & T4 OFF irrespective of A & B. Input Output
E A B Y
• Now, the gate circuit is logically 0 X X Z
disconnected from the output load 1 0 0 1
 it is in high impedance state. 1
1
0
1
1
0
1
1
1 1 1 0
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.4 MOSFET

MOSFET

Depletion Enhancement

NMOS PMOS NMOS PMOS

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


• NMOS  High input – Turn on, Low input – Turn off.
• PMOS  High input – Turn off, Low input – Turn on.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


3.5 CMOS logic family
• CMOS  connecting a p-channel & n-channel MOSFET
in series  drains tied together & the output is taken
at common drain  input applied to common gate.

• Reduced packing density, reduced speed but negligible


power consumption.
• Currently CMOS is the most popular for MSI & LSI areas
and is the only possible logic for VLSI devices.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.5.1 CMOS Inverter

• When A = 0 (i.e. Gnd), T1 turns ON and T2 turns OFF


 Drain voltage is high  output is 1.
• When A = 1 (i.e. VCC ), T1 is OFF & T2 is ON  low
drain voltage  output is 0.
• In either case, one of MOSFETs is OFF and only
small ID flows  low power dissipation.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.5.2 CMOS NAND gate

• T1 & T2 are PMOS and T3 & T4 are NMOS.


• If A is low, T1 is ON & T3 is OFF  If B is low, T2 is ON &
T4 is OFF  either case, output terminal is connected
to VCC & Q is HIGH.
• When both A & B are high, T1 & T2 are OFF and T3 & T4
are ON  output is connected to Gnd  Q is Low.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.5.3 CMOS NOR gate

• T1 & T2 are PMOS and T3 & T4 are NMOS.


• If A & B are low, T1 & T2 are ON and T3 & T4 are OFF 
o/p terminal is now connected to VCC & Q is HIGH.
• When A is high, T1 is OFF & T3 is ON  When B is high,
T2 is OFF & T4 is ON  either case, output terminal is
connected to Gnd  Q is Low.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.6 Comparison of logic families

• ECL  a non-saturated transistor logic family 


achieves very low propagation delay  useful for high
speed circuits  but very low noise margin & high
power dissipation.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
3.7 TTL subfamilies
• TTL family ICs available in 74XX series  Modified TTL
have been developed to provide special characteristics:
 74 series : Standard TTL
 74H series : High speed TTL – lower resistor values
used to reduce propagation delay, but increases
power dissipation.
 74L series : Low power TTL – higher resistor values
used to reduce power dissipation, but propagation
delay increases.
 74S series : Schottky TTL – Prevent the transistors
from saturation – reduces propagation delay.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.
 74LS series : Low power Schottky TTL – sacrifices
some speed to have lesser power dissipation.
 74AS series : Advanced Schottky TTL – improvement
in propagation delay over 74S series and also lowers
power dissipation.
 74ALS series: Advanced Low power Schottky TTL –
lowest speed-power product and most efficient
 74F series : Fast TTL – fastest and best choice for
high speed circuits.

Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.


• 74XX (commercial grade)  temp. range 00C to +700C.
• 54XX series  Military grade TTL  provide wider
temperature range  -550C to +1250C.
Prepared by : Sojan Francis P., Asst. Professor, ECE Dept., VAST.

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