SEMICONDUCTOR KN3906

TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES
ᴌLow Leakage Current

A
: ICEX=-50nA(Max.), @VCE=-30V, VEB=-3V.
ᴌLow Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. G B 4.80 MAX
C 3.70 MAX
ᴌComplementary to KN3904. D
D 0.45

J
E 1.00
F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
F K 0.55 MAX
MAXIMUM RATING (Ta=25ᴱ) F
L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT N 1.00
1 2 3

C
L
VCBO

M
Collector-Base Voltage -40 V
1. EMITTER
Collector-Emitter Voltage VCEO -40 V 2. BASE
3. COLLECTOR
Emitter-Base Voltage VEBO -5 V
Collector Current IC -200 mA
TO-92
Base Current IB -50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

1996. 1. 28 Revision No : 0 1/3

 KN3906

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -40 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 -5 - - V
hFE(1) VCE=-1V, IC=-0.1mA 60 - -
hFE(2) VCE=-1V, IC=-1mA 80 - -
DC Current Gain * hFE(3) VCE=-1V, IC=-10mA 100 - 300
hFE(4) VCE=-1V, IC=-50mA 60 - -
hFE(5) VCE=-1V, IC=-100mA 30 - -
VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4
VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95
Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz - 250 - MHz
Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF
* Pulse Test : Pulse Width⏊300Ọ
S, Duty Cycle⏊2%.

1996. 1. 28 Revision No : 0 2/3

 KN3906

h FE - I C C ob - V CB
1k 10
I E =0
500 f=100kHz

CAPACITANCE C ob (pF)
DC CURRENT GAIN h FE

8
300

V CE =-10V 6
100
4
50
VCE =-1V
30
2

10 0
-1 -3 -10 -30 -100 -300 -1k -1 -3 -10 -30 -100 -200

COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)

V BE(sat) , V CE(sat) - I C Pc - Ta
-10 700
COLLECTOR POWER DISSIPATION

I C /IB =10
-5
600
SATURATION VOLTAGE

-3
VBE(sat) ,VCE(sat) (V)

VBE(sat) 500
-1
PC (mW)

-0.5 400
-0.3
300
-0.1
200
-0.05
VCE(sat)
-0.03 100

-0.01 0
-0.1 -0.3 -1 -3 -10 -30 -100 0 25 50 75 100 125 150 175
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)

1996. 1. 28 Revision No : 0 3/3