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TR BD 135

The document describes NPN silicon epitaxial planar transistors - the Central Semiconductor BD135, BD137, and BD139. These transistors are designed for audio amplifier and switching applications. The document provides maximum ratings, electrical characteristics, and a mechanical outline for the TO-126 case used by the transistors.

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Riryn Aryna Astari Ihwana
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80 views2 pages

TR BD 135

The document describes NPN silicon epitaxial planar transistors - the Central Semiconductor BD135, BD137, and BD139. These transistors are designed for audio amplifier and switching applications. The document provides maximum ratings, electrical characteristics, and a mechanical outline for the TO-126 case used by the transistors.

Uploaded by

Riryn Aryna Astari Ihwana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Central

TM

BD135
BD137 Semiconductor Corp.
BD139

NPN SILICON TRANSISTOR DESCRIPTION:


The CENTRAL SEMICONDUCTOR BD135,
BD137, and BD139 are NPN Silicon Epitaxial
Planar Transistors designed for audio amplifier
and switching applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS: (TC=25°C) SYMBOL BD135 BD137 BD139 UNITS


Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 1.5 A
Peak Collector Current ICM 2.0 A
Continuous Base Current IB 0.5 A
Peak Base Current IBM 1.0 A
Power Dissipation (Tmb≤70°C) PD 8.0 W
Power Dissipation (TA=25°C) PD 1.25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJmb 10 °C/W
Thermal Resistance ΘJA 100 °C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)


SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=30V 100 nA
ICBO VCB=30V, TC=125°C 10 µA
IEBO VEB=5.0V 100 nA
BVCEO IC=30mA (BD135) 45 V
BVCEO IC=30mA (BD137) 60 V
BVCEO IC=30mA (BD139) 80 V
VCE(SAT) IC=500mA, IB=50mA 0.5 V
VBE(ON) VCE=2.0V, IC=500mA 1.0 V
hFE VCE=2.0V, IC=5.0mA 40
hFE VCE=2.0V, IC=150mA 63 250
hFE VCE=2.0V, IC=500mA 25
fT VCE=5.0V, IC=50mA, f=100MHz 190 MHz

BD135-10 BD135-16
BD137-10 BD137-16
BD139-10 BD139-16
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE VCE=2.0V, IC=500mA 63 160 100 250
R3 (18-September 2009)
Central
TM
BD135
BD137
BD139
Semiconductor Corp.
NPN SILICON TRANSISTOR

TO-126 CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Emitter
2) Collector
3) Base
Mounting Pad is
Common to Pin 2

MARKING:
FULL PART NUMBER

R3 (18-September 2009)

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