SEMICONDUCTOR KF4N20LW

N CHANNEL MOS FIELD

TECHNICAL DATA EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.

FEATURES
・VDSS(Min.)= 200V, ID= 1A
・Drain-Source ON Resistance : RDS(ON)=1.05 Ω(max) @VGS =10V
・Qg(typ.) =2.9nC
・Vth(Max.)= 2V

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS ±20 V
@TC=25℃ 1*
ID
Drain Current @TC=100℃ 0.6* A
Pulsed (Note1) IDP 4*
Single Pulsed Avalanche Energy
EAS 52 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 0.2 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 5.5 V/ns
(Note 3)
Drain Power TA=25℃ 2.2* W
PD
Dissipation Derate above25℃ 0.018 W/℃
Maximum Junction Temperature Tj 150 ℃
Storage Temperature Range Tstg -55～150 ℃
Thermal Characteristics
Thermal Resistance, Junction-to-
RthJA 57* ℃/W
Ambient
* : Surface Mounted on FR4 Board (40mm×40mm, 1.0t)

PIN CONNECTION

2010. 8. 18 Revision No : 0 1/6

 KF4N20LW

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃ - 0.2 - V/℃
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 μA
Gate Threshold Voltage Vth VDS=VGS, ID=250μA 1.0 - 2.0 V
Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA
VGS=10V, ID=0.5A - 0.85 1.05
Drain-Source ON Resistance RDS(ON) Ω
VGS=5V, ID=0.5A 0.89 1.10
Dynamic
Total Gate Charge Qg - 2.9 3.8
VDS=150V, ID=3.6A
Gate-Source Charge Qgs - 0.6 - nC
VGS=5V (Note4,5)
Gate-Drain Charge Qgd - 2.2 -
Turn-on Delay time td(on) - 10 -
VDD=100V, ID=3.6A
Turn-on Rise time tr - 20 -
RG=25Ω (Note4,5) ns
Turn-off Delay time td(off) - 15 -
VGS=5V
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 170 220
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 4.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS<Vth A
Pulsed Source Current ISP - - 4
Diode Forward Voltage VSD IS=1A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3.6A, VGS=0V, - 100 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.30 - μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, IS=1A, VDD=50V, RG = 25Ω, Starting Tj = 25℃.
Note 3) IS ≤2A, dI/dt≤300A/㎲, VDD≤BVDSS, Starting Tj = 25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking

KF4N20LW

2010. 8. 18 Revision No : 0 2/6

 KF4N20LW

VGS = 3V

0 2 4 6 8

3.0

2.5

2.0

1.5

1.0

0.5

2010. 8. 18 Revision No : 0 3/6

 KF4N20LW

Fig 7. C - VDS Fig8. Qg- VGS

1000 12
ID=4A

Gate - Source Voltage VGS (V)

10
Ciss VDS = 40V
Capacitance (pF)

100 8

6
Coss VDS = 160V
10 4

Crss 2

1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8

Gate - Charge Qg (nC)

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area Fig10. ID - Tj

102 Operation in this 1.2

area is limited by RDS(ON)
1.0
Drain Current ID (A)

Drain Current ID (A)

101
10µs 0.8
100µs

100 1ms 0.6

10ms 0.4
10-1 100ms
Tc= 25 C 0.2
Tj = 150 C
2 Single pulse DC
0
10- 2
10
0
10
1
10 103 0 25 50 75 100 125 150

Drain - Source Voltage VDS (V)

Junction Temperature Tj ( C)

Fig11. Transient Thermal Response Curve

102

Duty=0.5
Transient Thermal Resistance

101 0.20

0.10

0.05
PDM
100 0.02
t1
0.01
t2

lse - Duty Factor, D= t1/t2

10-1 Pu
gle Tj(max) - Tc
Sin - RthJC =
PD

10-2
10-5 10-4 10-3 10-2 10-1 100 101 102 103

TIME (sec)

2010. 8. 18 Revision No : 0 4/6

 KF4N20LW

Fig12. Gate Charge

VGS

5V

RL

0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS

Fig13. Single Pulsed Avalanche Energy

1 BVDSS
EAS= LIAS2
2 BVDSS - VDD

BVDSS
L
IAS
50V

25Ω
VDS ID(t)

VGS VDD VDS(t)

10 V

Time
tp
Fig14. Resistive Load Switching

VDS
90%

RL

0.5 VDSS
VGS 10%
td(off)
25 Ω td(on) tr
VDS tf

ton toff
VGS
10V

2010. 8. 18 Revision No : 0 5/6

 KF4N20LW

Fig15. Source - Drain Diode Reverse Recovery and dv /dt

DUT Body Diode Forword Current

VDS
ISD
L (DUT) di/dt

IRM

IS
Body Diode Reverse Current

0.5 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD

10V VGS
Body Diode Forword Voltage drop

2010. 8. 18 Revision No : 0 6/6