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PN Junctiondiode

The document describes an experiment to determine the V-I (voltage-current) characteristic of a PN junction diode. Theoretical equations show that in forward bias, current increases exponentially with voltage after an initial threshold or "knee" voltage. In reverse bias, a small constant reverse saturation current flows. Experimental results show the forward current is negligible until reaching the 0.7V knee voltage, after which it increases appreciably. In reverse bias, a small increasing current in the microamp range is observed with increasing voltage. Graphs of the forward and reverse V-I characteristics are provided.

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Ganesh Dhyani
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0% found this document useful (0 votes)
372 views4 pages

PN Junctiondiode

The document describes an experiment to determine the V-I (voltage-current) characteristic of a PN junction diode. Theoretical equations show that in forward bias, current increases exponentially with voltage after an initial threshold or "knee" voltage. In reverse bias, a small constant reverse saturation current flows. Experimental results show the forward current is negligible until reaching the 0.7V knee voltage, after which it increases appreciably. In reverse bias, a small increasing current in the microamp range is observed with increasing voltage. Graphs of the forward and reverse V-I characteristics are provided.

Uploaded by

Ganesh Dhyani
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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V-I characteristic of PN Junction

Object: To draw V-I characteristic of PN Junction diode and to determine knee or cut in voltage.
Apparatus used: PN Junction diode, voltmeter (0-2volt), voltmeter (0-30 volt), mili-ammeter,
micro-ammeter, variable source (0-2 volt and 0-30 volt).
Theory: PN Junction Diode:
The voltage current equation for diode is given by following formula.

(
I = I 0 eV / η V T − 1 ) (1)
Here, I: current through diode; V=Applied voltage to the diode
VT: voltage equivalent to temperature (KT/e)
η : constant (=1 for distances Ge and 2 for Si)

In forward bias When VF=+V, then eV / ηVT > 1 thus eq.(1) becomes as

I F = I 0 eV / η V T (2)
Hence the theoretical analysis indicates that forward current increases exponentially with
voltage. But practically it is not found becausee PN junction diode has a certain
barrier/threshold/knee potential. Initially the applied forward potential to diode is used to
neutralize this barrier potential. Therefore the current is approximately zero. The current increases
appreciably after the barrier potential.

In reverse bias When VR= -V, then eV / ηVT < 1 thus eq.(1) becomes as
I R = −I 0 (3)
Thus in reverse bias of diode, a constant current flows through the diode whose direction is
opposite to forward bias current. This current is known as reverse saturation current and it is
independent of voltage. At large reverse bias voltage, the reverse bias current increases gradually
to maximum due to avalanche breakdown.
Circuit diagramme:

Fig1: PN junction Diode in FB Fig 2: PN junction Diode in RB

1
Observation:
1. Least count of voltmeter (0-2volt) =0.02 volt
2. Least count of voltmeter (0-30volt) =0.5 volt
3. Least count of miliammeter =0.2 mA
4. Least count of micro-ammeter =5 μA
5. VF and IF for PN junction Diode in FB 6. VR and IR for PN junction diode in RB
Sr. VF IF
No. (Volt) (mA) Sr. VR IR
1. 0 0 No. (Volt) (mA)
2. 0.1 0 1. 0 0
3. 0.2 0 2. 2 0.04
4. 0.3 0 3. 4 0.1
5. 0.4 0 4. 6 0.2
6. 0.5 0 5. 8 0.2
7. 0.6 0.2 6. 10 0.2
8. 0.62 0.2 7. 12 0.2
9. 0.64 0.4 8. 14 0.2
10. 0.66 0.6 9. 16 0.2
10. 0.68 0.8 10. 18 0.2
11. 0.70 1.2 11. 20 0.2
12. 0.72 2.2 12. 22 0.2
13. 0.74 3.2 13. 24 0.2
14. 0.76 5.2 14. 26 0.4
15. 0.78 7.0 15. 28 0.8
16. 0.80 9.4 16. 30 1.2

Result:
The V-I characteristic of PN junction diode indicates that the forward current is negligible up to
the knee voltage. After that it increases appreciably. The knee voltage for diode is 0.7 volt. In
reverse bias, the constant current of μA order flows through the diode and it increases gradually to
maximum at large reverse voltage.
Precautions:
1. The connection should be tight otherwise fluctuation in voltage and current will happen.
2. At the turning point of curve, more reading should be taken.
3. For the plot of Graph, current should be taken mA for both forward and reverse biased diode.
4. The reading should be in multiple of least count.

2
V-I Characteristic Curve for PN Junction Diode in FB

3
V-I Characteristic Curve for PN Junction Diode in RB

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