Darlington Power Transistors (PNP)
TIP125/126/127
Darlington Power Transistors (PNP)
Features
• Designed for general-purpose amplifier and low speed
switching applications
• RoHS Compliant
TO-220
Mechanical Data
Case: TO-220, Plastic Package
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.08 ounces, 2.24 grams
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol Description TIP125 TIP126 TIP127 Unit
VCBO Collector-Base Voltage 60 80 100 V
VCEO Collector-Emitter Voltage 60 80 100 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current Continuous 5.0 A
ICM Collector Current Peak 8.0 A
IB Base Current 120 mA
Power Dissipation upto TC=25°C 65 W
Power Dissipation Derate above TC=25°C 0.52 W/° C
PD
Power Dissipation upto TA=25°C 2.0 W
Power Dissipation Derate above TA=25°C 16 mW/° C
RθJA Thermal Resistance from Junction to Ambient in Free Air 62.5 ° C /W
RθJC Thermal Resistance from Junction to Case 1.92 ° C /W
TJ, TSTG Operating Junction and Storage Temperature Range -65 to +150 °C
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Rev. A/AH 2008-06-13
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Page 1 of 4
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Darlington Power Transistors (PNP)
TIP125/126/127
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol Description Min. Max. Unit Conditions
1000 - VCE=3V, IC=0.5A
*hFE D.C. Current Gain
1000 - VCE=3V, IC=3A
TIP125 60 - V
Collector-Emitter Sustaining
*VCEO(sus) Voltage
TIP126 80 - V IC=100mA, IB=0
TIP127 100 - V
- 2.0 V IC=3A, IB=12mA
*VCE(sat) Collector-Emitter Saturation Voltage
- 4.0 V IC=5A, IB=20mA
*VBE(on) Base-Emitter On Voltage - 2.5 V IC=3A, VCE=3V
TIP125 - 0.5 VCE=30V, IB=0
Collector-Emitter Cut-off
ICEO Current
TIP126 - 0.5 mA VCE=40V, IB=0
TIP127 - 0.5 VCE=50V, IB=0
TIP125 - 0.2 VCB=60V, IE=0
Collector-Base Cut-off
ICBO Current
TIP126 - 0.2 mA VCB=80V, IE=0
TIP127 - 0.2 VCB=100V, IE=0
IEBO Emitter-Base Cut-off Current - 2 mA VEB=5V, IC=0
IC=3A, VCE=4V,
hfe Small Signal Current Gain 4.0 -
f=1.0MHz,
VCB=10V, IE=0,
Cob Output Capacitance - 300 pF
f=0.1MHz,
ton Turn on time Typ. 0.4 IC=3A, RL=10Ω,
µS IB1=IB2=12mA,
toff Turn off time Typ. 1.2 VEB(off)=5V
*Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Rev. A/AH 2008-06-13
www.taitroncomponents.com Page 2 of 4
Darlington Power Transistors (PNP)
TIP125/126/127
Dimensions in inch (mm)
TO-220
Rev. A/AH 2008-06-13
www.taitroncomponents.com Page 3 of 4
Darlington Power Transistors (PNP)
TIP125/126/127
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Rev. A/AH 2008-06-13
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