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Datasheet

This document provides specifications for the FMU-12S/R silicon diode from Sanken Electric Co., Ltd. including: 1) It is a resin molded silicon diode intended for high frequency rectification applications and meets UL94V-0 flammability standards. 2) Absolute maximum ratings include a peak reverse voltage of 200V, average forward current of 5A, and junction temperature range of -40°C to +150°C. 3) Electrical characteristics include a maximum forward voltage drop of 1.5V at 2.5A forward current and maximum reverse leakage current of 50uA at the rated reverse voltage.

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0% found this document useful (0 votes)
153 views4 pages

Datasheet

This document provides specifications for the FMU-12S/R silicon diode from Sanken Electric Co., Ltd. including: 1) It is a resin molded silicon diode intended for high frequency rectification applications and meets UL94V-0 flammability standards. 2) Absolute maximum ratings include a peak reverse voltage of 200V, average forward current of 5A, and junction temperature range of -40°C to +150°C. 3) Electrical characteristics include a maximum forward voltage drop of 1.5V at 2.5A forward current and maximum reverse leakage current of 50uA at the rated reverse voltage.

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Grupo Epufm
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© © All Rights Reserved
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You are on page 1/ 4

SANKEN ELECTRIC CO., LTD.

FMU-12S/R

1 Scope
The present specifications shall apply to an FMU-12S/R.

2 Outline

Type Silicon Diode

Structure Resin Molded

Applications High Frequency Rectification

3 Flammability
UL94V-0(Equivalent)

4 Absolute maximum ratings

No. Item Symbol Unit Rating Conditions

1 TransientPeak Reverse Voltage VRSM V 250

2 Peak Reverse Voltage VRM V 200

Refer to derating curve


3 Average Forward Current IF(AV) A 5.0
in Section 7
10 ms.
4 Peak Surge Forward Current IFSM A 30
Half sine wave, one shot

5 I2t Limiting Value I2 t A2s 4.5 1 ms ≤ t ≤ 10 ms

6 Junction Temperature Tj °C -40 to +150

7 Storage Temperature Tstg °C -40 to +150


No.1, 2, 4 and 5 show ratings per one chip.

5 Electrical characteristics (Ta=25°C, unless otherwise specified)

No. Item Symbol Unit Value Conditions

1 Forward Voltage Drop VF V 1.5 max. IF=2.5A

2 Reverse Leakage Current IR uA 50 max. VR=VRM

Reverse Leakage Current Under


3 H・IR uA 500 max. VR=VRM, Tj=150°C
High Temperature
IF=IRP=100mA
trr1 ns 400 max.
90% Recovery point, Tj=25°C
4 Reverse Recovery Time
IF=100mA,IRP=200mA
trr2 ns 180 max.
75% Recovery point, Tj=25°C

5 Thermal Resistance Rth(j-c) °C /W 4.0 max. Between Junction and case

No.1, 2, 3 and 4 show characteristics per one chip.

050512 1/4
61426-01
SANKEN ELECTRIC CO., LTD. FMU-12S/R

6 Characteristics

IF(AV) - PF
10
Tj=150°C

8 t
Forward Power Dissipation, PF (W)

t/T=1/6
6 t/T=1/3,sinewave

t/T=1/2
4
DC

0
0 1 2 3 4 5
Average Forward Current, IF(AV) (A)

VR - PR
1.2
Tj=150°C

1.0
t
Reverse Power Dissipation , PR (W)

T 1-t/T=5/6

0.8

1-t/T=2/3
0.6

0.4
1-t/T=1/2

0.2 sinewave

0.0
0 50 100 150 200
Reverse Voltage, VR (V)

050512 2/4
61426-01
SANKEN ELECTRIC CO., LTD. FMU-12S/R

7 Derating

Tc - IF(AV) VR=200(V)
5

4
Average Forward Current, IF(AV) (A)

t/T=1/6 DC
3
t/T=1/3

t/T=1/2
2

Tj=150°C sinewave
1
t
T

0
100 110 120 130 140 150
Case Temperature, TC (°C)

050512 3/4
61426-01
SANKEN ELECTRIC CO., LTD. FMU-12S/R

8 Package information
8-1Package type, physical dimensions and material
10.0 4.2
φ3 .3 2.8
C 0.5

4.0
8.4
16.9
※1
*1
※2
0.8 *2 ※2.6±0.1
※3

1.35
3.9
※ 根元寸法
※ root dimension
(13.5)
0.85 0.45
指 示 な き 公 差 ± 0.2
tolerance - ±0.2
―}_O_ Dimensions in mm
※2.54±0.1 ※2.54±0.1

8-2Appearance
The body shall be clean and shall not bear any stain, rust or flaw.

8-3Marking

Marking
Type Name
*1 is type
*2 is polarity *3 is lot number
name

1st letter: Last digit of year


FMU-12S FMU12S
2nd letter: Month From 1 to 9 for Jan. to Sep.,
O for Oct., N for Nov., D for Dec.
3rd & 4th letter: Day
FMU-12R FMU12R
ex. 2117 (Jan. 17, 2002)

050512 4/4
61426-01

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