STK13003
High voltage fast-switching NPN power transistor
Features
■ STK13003 is reverse pin out versus standard
SOT-82 package
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications SOT-82
■ Electronic ballast for fluorescent lighting (CFL)
■ SMPS for battery charger
Description Figure 1. Internal schematic diagram
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Table 1. Device summary
Order code Marking Package Packaging
STK13003 K13003 SOT-82 Tube
July 2008 Rev 4 1/10
www.st.com 10
Electrical ratings STK13003
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 0.75A, tp < 10µs) V(BR)EBO V
IC Collector current 1.5 A
ICM Collector peak current (tP < 5ms) 3 A
IB Base current 0.75 A
IBM Base peak current (tP < 5ms) 1.5 A
Ptot Total dissipation at Tc = 25°C 40 W
Tstg Storage temperature -55 to 150 °C
TJ Max. operating junction temperature 150 °C
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STK13003 Electrical characteristics
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 3. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector cut-off current VCE =700V 1 mA
ICES
(VBE = 0) VCE =700V Tc = 125°C 5 mA
Emitter-Base breakdown
V(BR)EBO IE =10mA 9 18 V
voltage (IC = 0)
Collector-emitter
VCEO(sus) (1) sustaining voltage (I = 0) IC =10mA 400
B V
IC = 0.5A _ IB = 0.1A 0.5 V
(1) Collector-emitter
VCE(sat) IC = 1A _ _ IB = 0.25A 1 V
saturation voltage
IC = 1.5A _ _ IB = 0.5A 1.5 V
Base-emitter saturation IC = 0.5A _ IB = 0.1A 1 V
VBE(sat) (1)
voltage IC = 1A _ _ IB = 0.25A 1.2 V
IC =0.5A VCE =2V 8 20
hFE DC current gain
IC =1A VCE =2V 5 25
Resistive load
VCC = 125V IC = 1A
tr Rise time 1 µs
IB1 = 0.2A IB2 = -0.2A
ts Storage time 4 µs
Tp = 25µs
tf Fall time 0.7 µs
IC = 1A IB1 = 0.2A
Inductive load
ts VBE =-5V L =50mH 0.8 µs
Storage time
VClamp =300V
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
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Electrical characteristics STK13003
2.1 Electrical characteristics (curves)
2.2
Figure 2. Safe operating areas Figure 3. Derating curves
Figure 4. Output characteristics Figure 5. Reverse biased safe
operating areas
Figure 6. DC current gain Figure 7. DC current gain
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STK13003 Electrical characteristics
Figure 8. Collector-emitter saturation Figure 9. Base-emitter saturation
voltage voltage
Figure 10. Inductive load switching time Figure 11. Resistive load switching time
2.3 Test circuits
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Electrical characteristics STK13003
Figure 12. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
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STK13003 Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STK13003
SOT-82 mechanical data
mm.
Dim.
Min. Typ. Max.
A 2.40 2.70
B 0.70 0.90
B1 0.49 0.75
D 10.50 10.80
E 7.40 7.80
e 2.04 2.54
e1 4.07 5.08
L 15.40 16
Q 3.80
Q1 1 1.30
H2 2.07
I 1.27
0016115_F
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STK13003 Revision history
4 Revision history
Table 4. Document revision history
Date Revision Changes
21-Jun-2004 3
14-Jul-2008 4 Modified mechanical data Figure on page 8.
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STK13003
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