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2sa2018 - SMD Marking BW4

This document provides specifications for the 2SA2018 low frequency transistor, including: - It has a large collector current and low collector saturation voltage. - It is intended for applications like switching and muting. - It provides maximum ratings, electrical characteristics, typical characteristics, and package outline details.

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julio montenegro
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459 views5 pages

2sa2018 - SMD Marking BW4

This document provides specifications for the 2SA2018 low frequency transistor, including: - It has a large collector current and low collector saturation voltage. - It is intended for applications like switching and muting. - It provides maximum ratings, electrical characteristics, typical characteristics, and package outline details.

Uploaded by

julio montenegro
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

LOW FREQUENCY TRANSISTOR 2SA2018

FEATURES
z A collceter current is large.
Pb
Lead-free
z Collecter saturation voltage is low.
VCE(sat)≤250mA
At IC=-200mA/IB=-10mA

APPLICATIONS
z For switching,for muting.
SOT-523

ORDERING INFORMATION
Type No. Marking Package Code

2SA2018 BW SOT-523

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Limits Unit

VCBO collector-base voltage -15 V

VCEO collector-emitter voltage -12 V

VEBO emitter-base voltage -6 V

IC collector current -500 mA

Pd Collector power dissipation 150 mW

Tstg storage temperature range -55 to +150 °C

Tj junction temperature 150 °C

Document number: BL/SSSTH028 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

LOW FREQUENCY TRANSISTOR 2SA2018

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT

V(BR)CBO Collector-base breakown voltage IC=-10μA,IE=0 -15

V(BR)CEO Collector- emitter breakown voltage IC=-1mA,IB=0 -12

V(BR)BEO Emitter-base breakown voltage IE=-10μA,IC=0 -6

ICBO Collector cut-off current IE=0,VCB=-15V -100 nA

IEBO Emitter cut-off current IC=0,VEB=-6V -100 nA

hFE DC current gain VCE=-2V,IC=-10mA 270 680

VCE(sat) collector-emitter saturation voltage IC=-50mA,IB=-5mA -100 -250 mV

Cobo Output capacitance IE=0,VCB=-10V,f=1MHz 6.5 pF


IE=10A,VCE =-2V,
fT transition frequency 260 MHz
f=100MHz

Document number: BL/SSSTH028 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

LOW FREQUENCY TRANSISTOR 2SA2018

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTH028 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

LOW FREQUENCY TRANSISTOR 2SA2018

PACKAGE OUTLINE
Plastic surface mounted package SOT-523

A C
SOT-523
Dim Min Max
A 1.5 1.7
K B B 0.75 0.85
C 0.6 0.8
D 0.15 0.3
D J
G 0.9 1.1
G
H 0.02 0.1
H
J 0.1Typical
K 1.45 1.75
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION
Device Package Shipping

2SA2018 SOT-523 3000/Tape&Reel

Document number: BL/SSSTH028 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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