MCR16N

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.

Features
SCRs
• Blocking Voltage to 800 Volts 16 AMPERES RMS
• On−State Current Rating of 16 Amperes RMS 800 VOLTS
• High Surge Current Capability − 160 Amperes
• Rugged Economical TO−220AB Package
G
• Glass Passivated Junctions for Reliability and Uniformity A K
• Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C
MARKING
• Pb−Free Package is Available* DIAGRAM

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1) VDRM, V AY WW
(TJ = −40 to 125°C, Sine Wave, VRRM MCR16NG
50 to 60 Hz, Gate Open) MCR16N 800 AKA
TO−220AB
On-State RMS Current IT(RMS) 16 A 1
2 CASE 221A−09
(180° Conduction Angles; TC = 80°C)
3 STYLE 3
Peak Non-repetitive Surge Current ITSM 160 A
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
A = Assembly Location
Circuit Fusing Consideration (t = 8.3 ms) I2t 106 A2sec Y = Year
Forward Peak Gate Power PGM 5.0 W WW = Work Week
(Pulse Width ≤ 1.0 ms, TC = 80°C) G = Pb−Free Package
AKA = Diode Polarity
Forward Average Gate Power PG(AV) 0.5 W
(t = 8.3 ms, TC = 80°C)

Forward Peak Gate Current IGM 2.0 A PIN ASSIGNMENT

(Pulse Width ≤ 1.0 ms, TC = 80°C)
1 Cathode
Operating Junction Temperature Range TJ −40 to +125 °C
2 Anode
Storage Temperature Range Tstg −40 to +150 °C
3 Gate
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not 4 Anode
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings ORDERING INFORMATION
apply for zero or negative gate voltage; positive gate voltage shall not be Device Package Shipping
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings MCR16N TO−220AB 50 Units / Rail
of the devices are exceeded.
MCR16NG TO−220AB 50 Units / Rail
(Pb−Free)

Preferred devices are recommended choices for future use

*For additional information on our Pb−Free strategy and soldering details, please
and best overall value.
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005 1

 MCR16N

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case RqJC 1.5 °C/W
Junction−to−Ambient RqJA 62.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current TJ = 25°C IDRM, − − 0.01 mA
(VAK = Rated VDRM or VRRM, Gate Open) TJ = 125°C IRRM − − 2.0
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2) VTM − − 1.7 V
(ITM = 32 A)
Gate Trigger Current (Continuous dc) IGT 2.0 10 20 mA
(VD = 12 V, RL = 100 W)
Gate Trigger Voltage (Continuous dc) VGT 0.5 0.65 1.0 V
(VD = 12 V, RL = 100 W)
Hold Current IH 4.0 25 40 mA
(Anode Voltage = 12 V, Initiating Current = 200 mA, Gate Open)
Latch Current IL − 30 60 mA
(VD = 12 V, Ig = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage dv/dt 100 300 − V/ms
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On−State Current di/dt − − 50 A/ms
(IPK = 50 A, Pw = 30 ms, diG/dt = 1 A/msec, Igt = 50 mA)
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.

Voltage Current Characteristic of SCR

+ Current
Anode +

Symbol Parameter VTM

VDRM Peak Repetitive Off State Forward Voltage
on state
IDRM Peak Forward Blocking Current
IRRM at VRRM IH
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage + Voltage
IH Holding Current Reverse Blocking Region IDRM at VDRM
(off state) Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode −

2
 MCR16N

PACKAGE DIMENSIONS

TO−220AB
CASE 221A−09
ISSUE AA

NOTES:
SEATING
−T− PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
T 3. DIMENSION Z DEFINES A ZONE WHERE ALL
S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
Q A DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U
C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L R L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 −−− 1.15 −−−
Z −−− 0.080 −−− 2.04

STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE