2009 Bookmatter TheKPMethod
2009 Bookmatter TheKPMethod
123
Dr. Lok C. Lew Yan Voon                                          Dr. Morten Willatzen
Wright State University                                          University of Southern Denmark
Physics Dept.                                                    Mads Clausen Institute for
3640 Colonel Glenn Highway                                       Product Innovation
Dayton OH 45435                                                  Alsion 2
USA                                                              6400 Soenderborg
lok.lewyanvoon@wright.edu                                        Denmark
                                                                 willatzen@mci.sdu.dk
                                                                                     vii
viii                                                                           Foreword
structures: till then the use of k·p had been confined to the close neighborhood of
band edges. Fred was very skilled at using the early computers available to us. We,
of course, were aiming at working with as few basis states as possible, so we started
with 9 (neglecting spin-orbit coupling). The bands did not look very good. We kept
adding basis states till we found that rather reasonable bands were obtained with
15 k = 0 states. The calculations were first performed for germanium and silicon,
then they were generalized to III-V compounds and spin-orbit coupling was added. I
kept the printed computer output for energies and wave functions versus k and used
it till recently for many calculations. The resulting Physical Review publication of
Fred and myself has been cited nearly 400 times. The last of my works which uses
k·p techniques was published in the Physical Review in 2008 by Chantis, Cardona,
Christensen, Smith, van Schilfgaarde, Kotani, Svane and Albers. It deals with the
stress induced linear terms in k in the conduction band minimum of GaAs. About
one-third of my publications use some aspects of the k·p theory.
    The present monograph is devoted to a wide range of aspects of the k·p method
as applied to diamond, zincblende and wurtzite-type semiconductors. Its authors
have been very active in using this method in their research. Chapter 1 of the
monograph contains an overview of the work and a listing of related literature. The
rest of the book is divided into two parts. Part one discusses k·p as applied to bulk
(i.e. three-dimensional) “homogeneous” tetrahedral semiconductors with diamond,
zincblende and wurtzite structure. It contains six chapters. Chapter 2 introduces
the k·p equation and discusses the perturbation theoretical treatment of the cor-
responding Hamiltonian as applied to the so-called one-band model. It mentions
that this usually parabolic model can be generalized to describe band nonparabol-
icity, anisotropy and spin splittings. Chapter 3 describes the application of k·p to
the description of the maxima (around k = 0) of the valence bands of tetrahe-
dral semiconductors, starting with the Dresselhaus, Kip and Kittel Hamiltonian. A
problem the novice encounters is the plethora of notations for the relevant matrix
elements of p and the corresponding parameters of the Hamiltonian. This chapter
lists most of them and their relationships, except for the Luttinger parameters γi , κ,
and q which are introduced in Chap. 5. It also discusses wurtzite-type materials and
the various Hamiltonians which have been used. In Chap. 4 the complexity of the
k·p Hamiltonian is increased. A four band and an eight band model are presented
and Löwdin perturbation theory is used for reducing (through down-folding of
states) the complexity of these Hamiltonians. The full-zone Cardona-Pollak 15 band
Hamiltonian is discussed, and a recent “upgrading” [69] using 20 bands in order to
include spin-orbit effects is mentioned. Similar Hamiltonians are also discussed for
wurtzite.
    In order to treat the effects of perturbations, such as external magnetic fields,
strain or impurities, which is done in Part II, in Chap. 5 the k·p Hamiltonian is
reformulated using the method of invariants, introduced by Luttinger and also by the
Russian group of Pikus (because of the cold war, as well as language difficulties, it
took a while for the Russian work to permeate to the West). A reformulation of this
method by Cho is also presented. Chapter 6 discusses effects of spin, an “internal”
perturbation intrinsic to each material. Chapter 7 treats the effect of uniform strains,
Foreword                                                                                ix
external perturbations which can change the point group but not the translational
symmetry of crystals.
    Part II is devoted to problems in which the three-dimensional translational sym-
metry is broken, foremost among them point defects. The k·p method is particu-
larly appropriate to discuss shallow impurities, leading to hydrogen-like gap states
(Chap. 8). The k·p method has also been useful for handling deep levels with
the Slater–Koster Hamiltonian (Serrano et al.), especially the effect of spin-orbit
coupling on acceptor levels which is discussed here within the Baldereschi–Lipari
model. Chapter 9 treats an external magnetic field which breaks translational sym-
metry along two directions, as opposed to an electric field (Chap. 10) which break
the translational symmetry along one direction only, provided it is directed along
one of the 3d basis vectors. Chapter 11 is devoted to excitons, electron hole bound
states which can be treated in a way similar to impurity levels provided one can sep-
arate the translation invariant center-of-mass motion of the electron-hole pair from
the internal relative motion. Chapters 12 and 13 give a detailed discussion of the
applications of k·p to the elucidation of the electronic structure of heterostructures,
in particular confinement effects. The k·p technique encounters some difficulties
when dealing with heterostructures because of the problem of boundary conditions
in the multiband case. The boundary condition problem, as extensively discussed by
Burt and Foreman, is also treated here in considerable detail. The effects of external
strains and magnetic fields are also considered (Chap. 13). In Chap. 12 the spherical
and cylindrical representations used by Sercel and Vahala, particularly useful for the
treatment of quantum dots and wires, are also treated extensively. Three appendices
complete the monograph: (A) on perturbation theory, angular momentum theory
and group theory, (B) on symmetry properties and their group theoretical analysis,
and (C) summarizing the various Hamiltonians used and giving a table with their
parameters for a few semiconductors. The monograph ends with a list of 450 litera-
ture references.
    I have tried to ascertain how many articles are found in the literature bases bear-
ing the k·p term in the title, the abstract or the keywords. This turned out to be a
rather difficult endeavor. Like in the case of homonyms of authors, the term k·p
is also found in articles which have nothing to do with the subject at hand, such
as those dealing with pions and kaons and even, within condensed matter physics,
those referring to dielectric susceptibilities at constant pressure κ p . Sorting them out
by hand in a cursory way, I found about 1500 articles dealing in some way with the
k·p method. They have been cited about 15000 times. The present authors have done
an excellent job reviewing and summarizing this work.
This is a book detailing the theory of a band-structure method. The three most com-
mon empirical band-structure methods for semiconductors are the tight-binding, the
pseudopotential, and the k · p method. They differ in the choice of basis functions
used to represent Schrödinger’s equation: atomic-like, plane-wave, and Bloch states,
respectively. Each have advantages of their own. Our goal here is not to compare the
various methods but to present a detailed exposition of the k · p method.
   One always wonder how a book got started. In this particular case, one might
say when the two authors were postdoctoral fellows in the Cardona Abteilung at the
Max Planck Institut für Festkörperforschung in Stuttgart, Germany in 1994–1995.
We started a collaboration that got us to use a variety of band-structure methods
such as the k · p, tight-binding and ab initio methods and has, to date, led to over 50
joint publications. The first idea for a book came about when one of us was visiting
the other as a Balslev research scholar and, fittingly, the final stages of the writing
were carried out when the roles were reversed, with Morten spending a sabbatical
at Wright State University.
   This book consists of two main parts. The first part concerns the application of the
theory to bulk crystals. We will spend considerable space on deriving and explaining
the bulk k · p Hamiltonians for such crystal structures. The second part concerns the
application of the theory to “perturbed” and nonperiodic crystals. As we will see,
this really consists of two types: whereby the perturbation is gradual such as with
impurities and whereby it can be discontinuous such as for heterostructures.
   The choice of topics to be presented and the order to do so was not easy. We thus
decided that the primary focus will be on showing the applicability of the theory
to describing the electronic structure of intrinsic semiconductors. In particular, we
also wanted to compare and contrast the main Hamiltonians and k · p parameters
to be found in the literature. This is done using the two main methods, perturba-
tion theory and the theory of invariants. In the process, we have preserved some
historical chronology by presenting first, for example, the work of Dresselhaus, Kip
and Kittel prior to the more elegant and complete work of Luttinger and Kane.
Partly biased by our own research and partly by the literature, a significant part
of the explicit derivations and illustrations have been given for the diamond and
zincblende semiconductors, and to a lesser extent for the wurtzite semiconductors.
The impact of external strain and static electric and magnetic fields on the electronic
                                                                                    xi
xii                                                                              Preface
structure are then considered since they lead to new k · p parameters such as the
deformation potentials and g-factors. Finally, the problem of inhomogeneity is con-
sidered, starting with the slowly-varying impurity and exciton potential followed by
the more difficult problem of sharp discontinuities in nanostructures. These topics
are included because they lead to a direct modification of the electron spectrum.
The discussion of impurities and magnetic field also allows us to introduce the third
theoretical technique in k · p theory, the method of canonical transformation. Finally,
the book concludes with a couple of appendices that have background formalism
and one appendix that summarizes some of the main results presented in the main
text for easy reference. In part because of lack of space and because there exists other
excellent presentations, we have decided to leave out applications of the theory, e.g.,
to optical and transport properties.
    The text is sprinkled with graphs and data tables in order to illustrate the formal
theory and is, in no way, intended to be complete. It was also decided that, for a book
of this nature, it is unwise to try to include the most “accurate” material parameters.
Therefore, most of the above were chosen from seminal papers. We have attempted
to include many of the key literature and some of the more recent work in order to
demonstrate the breadth and vitality of the theory. As much as is possible, we have
tried to present a uniform notation and consistent mathematical definitions. In a few
cases, though, we have decided to stick to the original notations and definitions in
the cited literature.
    The intended audience is very broad. We do expect the book to be more appro-
priate for graduate students and researchers with at least an introductory solid state
physics course and a year of quantum mechanics. Thus, it is assumed that the
reader is already familiar with the concept of electronic band structures and of
time-independent perturbation theory. Overall, a knowledge of group representation
theory will no doubt help, though one can probably get the essence of most argu-
ments and derivations without such knowledge, except for the method of invariants
which relies heavily on group theory.
    In closing, this work has benefitted from interactions with many people. First
and foremost are all of our research collaborators, particularly Prof. Dr. Manuel
Cardona who has always been an inspiration. Indeed, he was kind enough to read
a draft version of the manuscript and provide extensive insight and historical per-
spectives as well as corrections! As usual, any remaining errors are ours. We cannot
thank our family enough for putting up with all these long hours not just working
on this book but also throughout our professional careers. Last but not least, this
book came out of our research endeavors funded over the years by the Air Force
Office of Scientific Research (LCLYV), Balslev Fond (LCLYV), National Science
Foundation (LCLYV), the Danish Natural Science Research Council (MW), and the
BHJ Foundation (MW).
Acronyms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xxi
  1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .        1
    1.1    What Is k · p Theory? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                  1
    1.2    Electronic Properties of Semiconductors . . . . . . . . . . . . . . . . . . . . .                                1
    1.3    Other Books . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .            3
  2 One-Band Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .             7
    2.1   Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .           7
    2.2   k · p Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .             7
    2.3   Perturbation Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                  9
    2.4   Canonical Transformation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                       9
    2.5   Effective Masses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .              12
          2.5.1     Electron . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .              12
          2.5.2     Light Hole . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                13
          2.5.3     Heavy Hole . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                  14
    2.6   Nonparabolicity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .             14
    2.7   Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .           15
                                                                                                                        xiii
xiv                                                                                                                 Contents
      3.4        Wurtzite . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .   45
                 3.4.1     Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .           45
                 3.4.2     Basis States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .           46
                 3.4.3     Chuang–Chang Hamiltonian . . . . . . . . . . . . . . . . . . . . . . .                           46
                 3.4.4     Gutsche–Jahne Hamiltonian . . . . . . . . . . . . . . . . . . . . . . .                          52
      3.5        Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .      54
 5 Method of Invariants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
   5.1   Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
   5.2   DKK Hamiltonian – Hybrid Method . . . . . . . . . . . . . . . . . . . . . . . . . 79
   5.3   Formalism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
         5.3.1     Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
         5.3.2     Spatial Symmetries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
         5.3.3     Spinor Representation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
   5.4   Valence Band of Diamond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
         5.4.1     No Spin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
         5.4.2     Magnetic Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
         5.4.3     Spin-Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
   5.5   Six-Band Model for Diamond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
         5.5.1     Spin-Orbit Interaction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
         5.5.2     k-Dependent Part . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
   5.6   Four-Band Model for Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
   5.7   Eight-Band Model for Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
         5.7.1     Weiler Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
   5.8   14-Band Model for Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
         5.8.1     Symmetrized Matrices . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
         5.8.2     Invariant Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Contents                                                                                                                  xv
 7 Strain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
   7.1    Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
   7.2    Perturbation Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
          7.2.1            Strain Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
          7.2.2            Löwdin Renormalization . . . . . . . . . . . . . . . . . . . . . . . . . . 170
   7.3    Valence Band of Diamond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
          7.3.1            DKK Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
          7.3.2            Four-Band Bir–Pikus Hamiltonian . . . . . . . . . . . . . . . . . . 171
          7.3.3            Six-Band Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
          7.3.4            Method of Invariants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
   7.4    Strained Energies . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
          7.4.1            Four-Band Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
          7.4.2            Six-Band Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
          7.4.3            Deformation Potentials . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
   7.5    Eight-Band Model for Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
          7.5.1            Perturbation Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
          7.5.2            Method of Invariants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
   7.6    Wurtzite . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
          7.6.1            Perturbation Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
          7.6.2            Method of Invariants . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
xvi                                                                                                            Contents
11 Excitons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
   11.1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 257
   11.2 Excitonic Hamiltonian . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 258
   11.3 One-Band Model of Excitons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259
   11.4 Multiband Theory of Excitons . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
          11.4.1         Formalism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261
          11.4.2         Results and Discussions . . . . . . . . . . . . . . . . . . . . . . . . . . 266
          11.4.3         Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267
   11.5 Magnetoexciton . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 268
   11.6 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270
14 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 391
 C Hamiltonians . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
   C.1   Basis Matrices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
          C.1.1      s = 12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
          C.1.2      l = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
          C.1.3      J = 32 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 413
   C.2   |J M J  States . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 414
   C.3   Hamiltonians . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 414
          C.3.1      Notations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
          C.3.2      Diamond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
          C.3.3      Zincblende . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
          C.3.4      Wurtzite . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
          C.3.5      Heterostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
   C.4   Summary of k · p Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 416
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 431
Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 443
Acronyms
BF      Burt–Foreman
CC      Chuang–Chang
DKK     Dresselhaus–Kip–Kittel
DM      diamond
FBZ     first Brillouin zone
GJ      Gutsche–Jahne
KDWS    Koster–Dimmock–Wheeler–Statz
LK      Luttinger–Kohn
MU      Mireles–Ulloa
QW      quantum well
RSP     Rashba–Sheka–Pikus
SJKLS   Sirenko–Jeon–Kim–Littlejohn–Stroscio
SV      Sercel–Vahala
WZ      wurtzite
ZB      zincblende
xxi