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Type 2N3500: Geometry Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/366

This document provides specifications for the 2N3500 transistor, including: 1) It is a general purpose NPN silicon transistor in a TO-39 case, suitable for switching and amplifier applications. 2) The maximum ratings include a collector-emitter voltage of 150V, collector current of 300mA, and operating junction temperature from -65 to 200 degrees Celsius. 3) The electrical characteristics include a forward current transfer ratio of 35-120 at various currents, base-emitter and collector-emitter saturation voltages, and switching times under 115ns for turn on and 1150ns for turn off.

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61 views2 pages

Type 2N3500: Geometry Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/366

This document provides specifications for the 2N3500 transistor, including: 1) It is a general purpose NPN silicon transistor in a TO-39 case, suitable for switching and amplifier applications. 2) The maximum ratings include a collector-emitter voltage of 150V, collector current of 300mA, and operating junction temperature from -65 to 200 degrees Celsius. 3) The electrical characteristics include a forward current transfer ratio of 35-120 at various currents, base-emitter and collector-emitter saturation voltages, and switching times under 115ns for turn on and 1150ns for turn off.

Uploaded by

JavierYancb
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Data Sheet No.

2N3500

Type 2N3500 Generic Part Number:


Geometry 5620 2N3500
Polarity NPN
Qual Level: JAN - JANTXV REF: MIL-PRF-19500/366

Features:

• General-purpose silicon transistor


for switching and amplifier appli-
cations.
• Housed in TO-39 case.
• Also available in chip form using
the 5620 chip geometry.
• The Min and Max limits shown are
per MIL-PRF-19500/366 which TO-39
Semicoa meets in all cases.

Maximum Ratings
o
TC = 25 C unless otherwise specified

Rating Symbol Rating Unit


Collector-Emitter voltage VCEO 150 V

Collector-Base Voltage VCBO 150 V

Emitter-Base voltage VEBO 6.0 V

Collector Current, Continuous IC 300 mA

Power Dissipation, TA = 25oC 5.0 mW


PD
Derate above 25oC 28.8 mW/oC
o
Operating Junction Temperature TJ -65 to +200 C
o
Storage Temperature TSTG -65 to +200 C
Data Sheet No. 2N3500

Electrical Characteristics
o
TC = 25 C unless otherwise specified
OFF Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage
V(BR)CBO 150 --- V
IC = 10 µA
Collector-Emitter Breakdown Voltage
V(BR)CEO 150 --- V
IC = 10 mA
Emitter-Base Breakdown Voltage
V(BR)EBO 6.0 --- V
IE = 10 µA
Collector-Base Cutoff Current
ICBO --- 50 nA
VCB = 75 V
Emitter-Base Cutoff Current
IEBO --- 25 nA
VEB = 4 V

ON Characteristics Symbol Min Max Unit


Forward Current Transfer Ratio
IC = 100 µA, VCE = 10 V (pulsed) hFE1 20 --- ---
IC = 1.0 mA, VCE = 10 V (pulsed) hFE2 25 --- ---
IC = 10 mA, VCE = 10 V (pulsed) hFE3 35 --- ---
IC = 150 mA, VCE = 10 V (pulsed) hFE4 40 120 ---
IC = 300 mA, VCE = 10 V (pulsed) hFE6 15 --- ---
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA VBE(sat)1 --- 0.8 V dc
IC = 150 mA, IB = 15 mA VBE(sat)2 --- 1.2 V dc
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA VCE(sat)1 --- 0.2 V dc
IC = 150 mA, IB = 15 mA VCE(sat)2 --- 0.4 V dc
Small Signal Characteristics Symbol Min Max Unit
Short Circuit Forward Current Transfer Ratio
AC hFE 75 375 ---
IC = 10 mA, VCE = 10 V, f = 1 kHz
Magnitude of Common Emitter, Small Signal, Short Circuit
Forward Current Transfer Ratio |hFE| 1.5 8.0 ---
VCE = 20 V, IC = 20 mA, f = 100 MHz
Open Circuit Output Capacitance
COBO --- 8.0 pF
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
CIBO --- 80 pF
VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz
Noise Figure
NF --- 16 dB
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz
Noise Figure
NF --- 6.0 dB
VCE = 10 V, IC = 0.5 mA, Rg = 1 kOhm, 1 kHz

Switching Characteristics Symbol Min Max Unit


Saturated Turn On Switching time to 90%
tON --- 115 ns
IC = 150 mA, IB1 = 15 mA, VEB = 2 V
Saturated Turn Off Switching time to 10%
tOFF --- 1150 ns
IC = 150 mA, IB2 = -IB1 = 15 mA

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