27mW - 650V SiC Cascode | UJ3C065030T3S

Datasheet
Description
CASE CASE
United Silicon Carbide's cascode products co-package its high- D (2)
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are G (1)
excellent for switching inductive loads, and any application requiring
standard gate drive.
12
3
S (3)

Part Number Package Marking

UJ3C065030T3S TO-220-3L UJ3C065030T3S

Features Typical Applications

w Typical on-resistance RDS(on),typ of 27mW w EV charging
w Maximum operating temperature of 175°C w PV inverters
w Excellent reverse recovery w Switch mode power supplies
w Low gate charge w Power factor correction modules
w Low intrinsic capacitance w Motor drives
w ESD protected, HBM class 2 w Induction heating

Maximum Ratings
Parameter Symbol Test Conditions Value Units
Drain-source voltage VDS 650 V
Gate-source voltage VGS DC -25 to +25 V
TC=25°C 85 A
Continuous drain current 1 ID
TC=100°C 62 A
2
Pulsed drain current IDM TC=25°C 230 A
3
Single pulsed avalanche energy EAS L=15mH, IAS=4A 120 mJ
Power dissipation Ptot TC=25°C 441 W
Maximum junction temperature TJ,max 175 °C
Operating and storage temperature TJ, TSTG -55 to 175 °C
Max. lead temperature for soldering,
TL 250 °C
1/8” from case for 5 seconds
1 Limited by TJ,max
2 Pulse width tp limited by TJ,max
3 Starting TJ = 25°C

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)

Typical Performance - Static

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 650 V
VDS=650V,
6 150
VGS=0V, TJ=25°C
Total drain leakage current IDSS mA
VDS=650V,
30
VGS=0V, TJ=175°C
VDS=0V, Tj=25°C,
Total gate leakage current IGSS 6 20 mA
VGS=-20V / +20V
VGS=12V, ID=50A,
27 35
TJ=25°C
Drain-source on-resistance RDS(on) mW
VGS=12V, ID=50A,
43
TJ=175°C
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4 5 6 V
Gate resistance RG f=1MHz, open drain 4.5 W

Typical Performance - Reverse Diode

Value
Parameter Symbol Test Conditions Units
Min Typ Max
Diode continuous forward current 1 IS TC=25°C 85 A

Diode pulse current 2 IS,pulse TC=25°C 230 A

VGS=0V, IF=20A,
1.3 1.4
TJ=25°C
Forward voltage VFSD V
VGS=0V, IF=20A,
1.35
TJ=175°C

VR=400V, IF=50A,
Reverse recovery charge Qrr 400 nC
VGS=0V, RG_EXT=20W
di/dt=1550A/ms,
Reverse recovery time trr TJ=150°C 33 ns

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet
Typical Performance - Dynamic
Value
Parameter symbol Test Conditions Units
Min Typ Max
Input capacitance Ciss VDS=100V, 1500
Output capacitance Coss VGS=0V, 320 pF
Reverse transfer capacitance Crss f=100kHz 2.3
VDS=0V to 400V,
Effective output capacitance, energy related Coss(er) 230 pF
VGS=0V

VDS=0V to 400V,
Effective output capacitance, time related Coss(tr) 520 pF
VGS=0V
COSS stored energy Eoss VDS=400V, VGS=0V 18.5 mJ
Total gate charge QG 51
VDS=400V, ID=50A,
Gate-drain charge QGD 11 nC
VGS=-5V to 15V
Gate-source charge QGS 19
Turn-on delay time td(on) 36
VDS=400V, ID=50A, Gate
Rise time tr 22
Driver=-5V to +15V, ns
Turn-off delay time td(off) Turn-on RG,EXT=1W, 56
Fall time tf Turn-off RG,EXT=20W 15
Turn-on energy EON Inductive Load, 472
FWD: UJ3D06530TS
Turn-off energy EOFF
TJ=150°C 257 mJ
Total switching energy ETOTAL 729

Thermal Characteristics

Value
Parameter symbol Test Conditions Units
Min Typ Max
Thermal resistance, junction-to-case RqJC 0.26 0.34 °C/W

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet
Typical Performance Diagrams

200 200

150 150
Drain Current, ID (A)

Drain Current, ID (A)

100 Vgs = 15V 100
Vgs = 10V Vgs = 15V
Vgs = 8V Vgs = 10V
50 Vgs = 7.5V 50 Vgs = 8V
Vgs = 7V Vgs = 7V
Vgs = 6.5V Vgs = 6.5V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 1 Typical output characteristics Figure 2 Typical output characteristics

at T J = - 55°C, tp < 250 m s at T J = 25°C, tp < 250 m s

200 2.0
Vgs = 15V
Vgs = 10V
On Resistance, RDS_ON (P.U.)

Vgs = 8V
150 1.5
Drain Current, ID (A)

Vgs = 7V
Vgs = 6.5V
Vgs = 6V
100 1.0

50 0.5

0 0.0
0 1 2 3 4 5 6 7 8 9 10 -75 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Junction Temperature, TJ (°C)

Figure 3 Typical output characteristics Figure 4 Normalized on-resistance vs.

at T J = 175°C, tp < 250 m s temperature at V GS = 12V and
I D = 50A

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet

100 150
Tj = 175°C Tj = -55°C
Tj = 25°C 125
On-Resistance, RDS(on) (mW)

80 Tj = 25°C
Tj = - 55°C

Drain Current, ID (A)

Tj = 175°C
100
60
75
40
50

20
25

0 0
0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10
Drain Current, ID (A) Gate-Source Voltage, VGS (V)

Figure 5 Typical drain-source Figure 6 Typical transfer characteristics

on-resistance at V GS = 12V at V DS = 5V

6 20
Gate-Source Voltage, VGS (V)

5
Threshold Voltage, Vth (V)

15

4
10
3

5
2

1 0

0
-5
-100 -50 0 50 100 150 200
0 10 20 30 40 50 60
Junction Temperature, TJ (°C) Gate Charge, QG (nC)

Figure 7 Threshold voltage vs. T J Figure 8 Typical gate charge

at V DS = 5V and I D = 10mA at V DS = 400V and I D = 50A

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet

0 0
Vgs = -5V Vgs = - 5V
Vgs = 0V Vgs = 0V
-25 -25
Drain Current, ID (A)

Drain Current, ID (A)

Vgs = 5V Vgs = 5V
Vgs = 8V Vgs = 8V

-50 -50

-75 -75

-100 -100
-4 -3 -2 -1 0 -4 -3 -2 -1 0
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 9 3rd quadrant characteristics Figure 10 3rd quadrant characteristics

at T J = - 55°C at T J = 25°C

0 45
40

-25 35
Drain Current, ID (A)

30
EOSS (mJ)

25
-50
Vgs = - 5V 20
Vgs = 0V 15
-75 Vgs = 5V
10
Vgs = 8V
5
-100 0
-4 -3 -2 -1 0 0 100 200 300 400 500 600
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)

Figure 11 3rd quadrant characteristics Figure 12 Typical stored energy in C OSS

at T J = 175°C at V GS = 0V

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet

10000 100

Ciss

DC Drain Current, ID (A)

80
1000
Capacitance, C (pF)

Coss
60
100

40
10
Crss 20

1
0 100 200 300 400 500 600 0
Drain-Source Voltage, VDS (V) -75 -50 -25 0 25 50 75 100 125 150 175
Case Temperature, TC (°C)

Figure 13 Typical capacitances at 100kHz Figure 14 DC drain current derating

and V GS = 0V

500
Thermal Impedance, ZqJC (°C/W)
Power Dissipation, Ptot (W)

400
0.1

300 D = 0.5
D = 0.3
200 D = 0.1
0.01
D = 0.05
D = 0.02
100
D = 0.01
Single Pulse
0 0.001
-75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Case Temperature, TC (°C) Pulse Time, tp (s)

Figure 15 Total power dissipation Figure 16 Maximum transient thermal impedance

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet

1000
1ms 900 VDD = 400V, VGS = -5V/15V
100 RG_ON = 1W, RG_OFF = 20W

Switching Energy (mJ)

800 FWD: UJ3D06530TS
10ms 700
Drain Current, ID (A)

600 Etot
10
500 Eon
100ms Eoff
400

1
1ms 300
DC 10ms 200
100

0.1 0
1 10 100 1000 0 10 20 30 40 50 60
Drain-Source Voltage, VDS (V) Drain Current, ID (A)

Figure 17 Safe operation area Figure 18 Clamped inductive switching energy

T c = 25°C, D = 0, Parameter t p vs. drain current at T J = 150°C

800 600
VDD = 400V, VGS = -5V/15V
700
500 ID = 50A, TJ = 150°C
Turn-Off Energy, Eoff (mJ)
Turn-on Energy, Eon (mJ)

600 FWD: UJ3D06530TS

400
500

400 VDD = 400V, VGS = -5V/15V 300

300 ID = 50A, TJ = 150°C

FWD: UJ3D06530TS 200
200
100
100

0 0
0 5 10 15 20 0 20 40 60 80 100
Total External RG, RG,EXT_ON (W) Total External RG, RG,EXT_OFF (W)

Figure 19 Clamped inductive switching Figure 20 Clamped inductive switching

turn-on energy vs. R G,EXT_ON turn-off energy vs. R G,EXT_OFF

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 27mW - 650V SiC Cascode | UJ3C065030T3S
Datasheet

1000
Etot
900
Eon
Switching Energy (mJ)

800 Eoff
700
600
500
400
300
200 VDD = 400V, VGS = -5V/15V
RG_ON = 1W, RG_OFF = 20W
100
0
0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C)

Figure 21 Clamped inductive switching energy

vs. junction temperature at I D = 50A

Applications Information

SiC cascodes are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon
MOSFET connected in series. The silicon MOSFET serves as the control unit while the SiC JFET provides high voltage blocking in the
off state. This combination of devices in a single package provides compatibility with standard gate drivers and offers superior
performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (Qg), and reverse recovery charge (Qrr)
leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction capability eliminating
the need for an external anti-parallel diode.

Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due
to the high dv/dt and di/dt rates. An external gate resistor is recommended when the cascode is working in the diode mode in order
to achieve the optimum reverse recovery performance. For more information on cascode operation, see www.unitedsic.com.

Disclaimer

United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical
specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies
within.

Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual
property rights is granted within this document.

United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc.
products and services described herein.

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