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Semiconductor 2N5551S: Technical Data

This datasheet summarizes the technical specifications of the 2N5551S epitaxial planar NPN transistor. It has a high collector breakdown voltage of 180V and low leakage current of 50nA at 120V. It also features low saturation voltage of 0.2V max at 50mA collector current and 5mA base current. The transistor has a DC current gain ranging from 80 to 250 and noise figure of maximum 8dB.

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51 views3 pages

Semiconductor 2N5551S: Technical Data

This datasheet summarizes the technical specifications of the 2N5551S epitaxial planar NPN transistor. It has a high collector breakdown voltage of 180V and low leakage current of 50nA at 120V. It also features low saturation voltage of 0.2V max at 50mA collector current and 5mA base current. The transistor has a DC current gain ranging from 80 to 250 and noise figure of maximum 8dB.

Uploaded by

EduRoi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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SEMICONDUCTOR 2N5551S

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.


HIGH VOLTAGE APPLICATION.
E
L B L
DIM MILLIMETERS
FEATURES A _ 0.20
2.93 +
ᴌHigh Collector Breakdwon Voltage B 1.30+0.20/-0.15
C 1.30 MAX

D
: VCBO=180V, VCEO=160V 2 3 D 0.45+0.15/-0.05

G
E 2.40+0.30/-0.20
ᴌLow Leakage Current.

H
1 G 1.90
: ICBO=50nA(Max.) VCB=120V H 0.95
J 0.13+0.10/-0.05
ᴌLow Saturation Voltage K 0.00 ~ 0.10
L 0.55
P P
: VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA M 0.20 MIN
N 1.00+0.20/-0.10
ᴌLow Noise : NF=8dB (Max.)

N
P 7

J
M

K
1. EMITTER
MAXIMUM RATING (Ta=25ᴱ) 2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V SOT-23
Emitter-Base Voltage VEBO 6 V
Collector Current IC 600 mA
Base Current IB 100 mA
Collector Power Dissipation PC * 350 mW
Junction Temperature Tj 150 ᴱ
Marking
Storage Temperature Range Tstg -55ᴕ150 ᴱ Lot No.

Note : * Package Mounted On 99.5% Alumina 10ᴧ8ᴧ0.6Ὂ)


Type Name
ZF

1999. 11. 30 Revision No : 2 1/2


2N5551S

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)


CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VCB=120V, IE=0 - - 50 nA
Collector Cut-off Current ICBO
VCB=120V, IE=0, Ta=100ᴱ - - 50 A
Ọ
Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 50 nA

Collector-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 180 - - V

Collector-Emitter *
V(BR)CEO IC=1mA, IB=0 160 - - V
Breakdown Voltage

Emitter-Base Breakdown Voltage V(BR)EBO IE=10ỌA, IC=0 6 - - V

hFE(1) VCE=5V, IC=1mA 80 - -


DC Current Gain * hFE(2) VCE=5V, IC=10mA 80 - 250
hFE(3) VCE=5V, IC=50mA 30 - -

Collector-Emitter * VCE(sat)1 IC=10mA, IB=1mA - - 0.15


V
Saturation Voltage VCE(sat)2 IC=50mA, IB=5mA - - 0.2

Base-Emitter * VBE(sat)1 IC=10mA, IB=1mA - - 1.0


V
Saturation Voltage VBE(sat)2 IC=50mA, IB=5mA - - 1.0
Transition Frequency fT VCE=10V, IC=10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 6 pF
Input Capacitance Cib VBE=0.5V, IC=0, f=1MHz - - 20 pF
Small-Signal Current Gain hfe VCE=10V, IC=1mA, f=1kHz 50 - 200
VCE=5V, IC=250ỌA
Noise Figure NF - - 8 dB
Rg=1kή, f=10Hzᴕ15.7kHz
* Pulse Test : Pulse Width⏊300Ọ
S, Duty Cycle⏊2%.

1999. 11. 30 Revision No : 2 2/2


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