SGT40N60NPFDPN_Datasheet

40A, 600V FIELD STOP IGBT

DESCRIPTION

SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum

performance for induction Heating, UPS, SMPS and PFC application.

FEATURES

 40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A

 Low conduction loss
 Fast switching
 High input impedance

NOMENCLATURE

ORDERING INFORMATION
Part No. Package Marking Hazardous Substance Control Packing
SGT40N60NPFDPN TO-3P 40N60NPFD Pb free Tube

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Parameter Symbol Ratings Units

Collector to Emitter Voltage VCE 600 V
Gate to Emitter Voltage VGE ±20 V
TC=25°C 80
Collector Current IC A
TC=100°C 40
Pulsed Collector Current ICM 120 A
290 W
Maximum Power Dissipation (TC=25C) PD
2.32 W/C
Operating Junction Temperature TJ -55～+175 C
Storage Temperature Range Tstg -55～+175 C

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 SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS

Parameter Symbol Ratings Units

Thermal Resistance, Junction to Case (IGBT) RθJC 0.24 C/W
Thermal Resistance, Junction to Case (FRD) RθJC 1.4 C/W
Thermal Resistance, Junction to Ambient RθJA 35.5 C/W

ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)

Parameter Symbol Test conditions Min. Typ. Max. Units

Collector to Emitter
BVCE VGE=0V,IC=250uA 600 -- -- V
Breakdown Voltage
C-E Leakage Current ICES VCE=600V,VGE=0V -- -- 200 uA
G-E Leakage Current IGES VGE=20V,VCE=0V -- -- ±500 nA
G-E Threshold Voltage VGE(th) IC=250uA,VCE=VGE 4.0 5.0 6.5 V
Collector to Emitter IC=40A,VGE=15V -- 1.8 2.7 V
VCE(sat)
Saturation Voltage IC=40A,VGE=15V,TC=125C -- 2.1 -- V
Input Capacitance Cies VCE=30V -- 1850 --
Output Capacitance Coes VGE=0V -- 180 -- pF
Reverse Transfer Capacitance Cres f=1MHz -- 50 --
Turn-On Delay Time Td(on) -- 18 --
Rise Time Tr VCE=400V -- 80 --
ns
Turn-Off Delay Time Td(off) IC=40A -- 110 --
Fall Time Tf Rg=10Ω -- 105 --
Turn-On Switching Loss Eon VGE=15V -- 1.87 --
Turn-Off Switching Loss Eoff Inductive Load, -- 0.68 -- mJ
Total Switching Loss Est -- 2.55 --
Total Gate Charge Qg -- 100 --
VCE = 300V, IC=20A,
Gate to Emitter Charge Qge -- 11 --
VGE = 15V nC
Gate to Collector Charge Qgc -- 52 --

ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)

Parameter Symbol Test conditions Min. Typ. Max. Units

IF = 20A TC=25C -- 1.9 2.6
Diode Forward Voltage Vfm V
IF = 20A TC=125C -- 1.5 --
Diode Reverse Recovery Time Trr IES =20A, dIES/dt=200A/μs -- 32 -- ns
Diode Reverse Recovery Charge Qrr IES =20A, dIES/dt=200A/μs -- 74 -- nC

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3

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 SGT40N60NPFDPN_Datasheet
TYPICAL CHARACTERISTICS CURVE

Figure 1. Typical output characteristics Figure 2. Typical output characteristics

120 120
TC=25°C TC=125°C 20V
20V 15V
100 100
15V
12V 12V
80 80
10V 10V

60 60

40 40 VGE=8V
VGE=8V
20 20

0 0
0 1.5 3.0 4.5 6.0 0 1.5 3.0 4.5 6.0

Collector-Emitter voltage – VCE(V) Collector-Emitter voltage– VCE(V)

Figure 3. Typical saturation voltage characteristic Figure 4. Transmission characteristic

120 120
Emitter in Emitter in
100 common 100 common
VGE=15V VGE=20V
TC=25°C

80 80

60 TC=125°C 60
TC=25°C
40 40
TC=125°C

20 20

0 0
0 1 2 3 4 5 4 5 6 7 8 9 10 11 12

Collector-Emitter voltage – VCE(V) Gate-Emitter voltage – VGE(V)

Figure 5. Saturation voltage vs. VGE Figure 6. Saturation voltage vs. VGE
20 20
Emitter in Emitter in
common common
TC=25°C TC=125°C
16 16

12 80A 12 80A

8 40A
8 40A
IC=20A IC=20A

4 4

0 0
4 8 12 16 20 4 8 12 16 20

Gate-Emitter voltage – VGE(V) Gate-Emitter voltage– VGE(V)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3

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 SGT40N60NPFDPN_Datasheet
TYPICAL CHARACTERISTICS CURVE (CONTINUED)

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3

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 SGT40N60NPFDPN_Datasheet
TYPICAL CHARACTERISTICS CURVE (CONTINUED)

Peak Power Impedance (°C/W)

Collector Current - IC(A)

PACKAGE OUTLINE

TO-3P Unit:mm

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 SGT40N60NPFDPN_Datasheet
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 Silan reserves the right to make changes to the information herein for the improvement of the design and performance without
further notice! Customers should obtain the latest relevant information before placing orders and should verify that such
information is complete and current.
 All semiconductor products malfunction or fail with some probability under special conditions. When using Silan products in
system design or complete machine manufacturing, it is the responsibility of the buyer to comply with the safety standards
strictly and take essential measures to avoid situations in which a malfunction or failure of such Silan products could cause
loss of body injury or damage to property.
 Silan will supply the best possible product for customers!

Part No.: SGT40N60NPFDPN Document Type: Datasheet

Copyright: HANGZHOU SILAN MICROELECTRONICS CO.,LTD Website: http: //www.silan.com.cn

Rev.: 1.3
Revision History:
1. Modify the Max Value of Junction Temperature
Rev.: 1.2
Revision History:
1. Modify the electrical characteristic of IGBT
Rev.: 1.1
Revision History:
1. Add pin No.
2. Modify the package outline of TO-3P
Rev.: 1.0
Revision History:
1. First release

HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.3

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