VP0104

VP0106
VP0109

P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) ID(ON) Order Number / Package
BVDGS (max) (min) TO-92 Die†
-40V 8.0Ω -0.5A VP0104N3 —
-60V 8.0Ω -0.5A VP0106N3 —
-90V 8.0Ω -0.5A VP0109N3 VP0109ND

Features Advanced DMOS Technology

❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
❏ Low power drive requirement
manufacturing process. This combination produces devices with
❏ Ease of paralleling the power handling capabilities of bipolar transistors and with the
❏ Low CISS and fast switching speeds high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
❏ Excellent thermal stability devices are free from thermal runaway and thermally-induced
❏ Integral Source-Drain diode secondary breakdown.

❏ High input impedance and high gain Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
❏ Complementary N- and P-channel devices voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Applications
❏ Motor controls Package Option
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)

SGD
TO-92
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 20V
Note: See Package Outline section for dimensions.
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.

07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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 VP0104/VP0106/VP0109

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM
@ TC = 25°C °C/W °C/W
TO-92 -0.25A -0.8A 1.0W 125 170 -0.25A -0.8A
* ID (continuous) is limited by max rated Tj.

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source VP0109 -90
Breakdown Voltage VP0106 -60 V ID = -1.0mA, VGS = 0V
VP0104 -40
VGS(th) Gate Threshold Voltage -1.5 -3.5 V VGS = VDS, ID = -1.0mA
∆V GS(th) Change in VGS(th) with Temperature 5.8 6.5 mV/°C ID = -1.0mA, VGS = VDS
IGSS Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current -10 µA VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
-1 mA TA = 125°C
ID(ON) ON-State Drain Current -0.15 -0.25 VGS = -5V, VDS = -25V
A
-0.50 -1.2 VGS = -10V, VDS = -25V
RDS(ON) Static Drain-to-Source 11 15 VGS = -5V, ID = -0.1A
ON-State Resistance Ω
6.0 8.0 VGS = -10V, ID = -0.5A
∆RDS(ON) Change in RDS(ON) with Temperature 0.55 1.0 %/°C VGS = -10V, ID = -0.5A
Ω
GFS Forward Transconductance 150 190 m VDS = -25V, ID = -0.5A
CISS Input Capacitance 45 60
VGS = 0V, VDS = -25V
COSS Common Source Output Capacitance 22 30 pF
f = 1 MHz
CRSS Reverse Transfer Capacitance 3 8
td(ON) Turn-ON Delay Time 4 6
VDD = -25V
tr Rise Time 3 10
ns ID = -0.5A
td(OFF) Turn-OFF Delay Time 8 12
RGEN = 25Ω
tf Fall Time 4 10
VSD Diode Forward Voltage Drop -1.2 -2.0 V ISD = -1.0A, VGS = 0V
trr Reverse Recovery Time 400 ns ISD = -1.0A, VGS = 0V
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

0V
10% PULSE
INPUT GENERATOR

-10V 90%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF D.U.T.

0V OUTPUT
INPUT
90% 90%
OUTPUT RL

VDD 10% 10%

VDD

2
 VP0104/VP0106/VP0109

Typical Performance Curves

Output Characteristics Saturation Characteristics
-2.0 -1.0
VGS = -10V

-1.6 -0.8

VGS = -10V
ID (amperes)

ID (amperes)
-8V
-1.2 -0.6

-0.8 -8V -0.4

-6V

-0.4 -6V -0.2

-4V -4V
0 0
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

250 2.0
VDS = -25V TA= -55°C

200 TA = 25°C
GFS (millisiemens)

TA = 125°C
150 TO-92
PD (watts)

1.0

100

50

0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 0 25 50 75 100 125 150
ID (amperes) TC (°C)

Maximum Rated Safe Operating Area Thermal Response Characteristics

-10 1.0
Thermal Resistance (normalized)

0.8

-1.0
ID (amperes)

0.6

TO-92(DC) 0.4
-0.1

0.2 TO-92
P D = 1W
T C = 25°C T C = 25°C
-0.01 0
-0.1 -1.0 -10 -100 0.001 0.01 0.1 1 10
VDS (volts) tp (seconds)

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 VP0104/VP0106/VP0109

Typical Performance Curves

BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.10 50

VGS = -5V
1.06 40
BVDSS (normalized)

VGS = -10V

RDS(ON) (ohms)
1.02 30

0.98 20

0.94 10

0.90 0
-50 0 50 100 150 0 -0.3 -0.6 -0.9 -1.2 -1.5
Tj (°C) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

-1.0 1.6
TA = -55°C
1.6
VDS = -25V RDS(ON) @ -10V, -0.5A
-0.8 1.4
TA = 25°C

RDS(ON) (normalized)
RDS(ON) @ -5V, 0.1A
VGS(th) (normalized)

1.4
ID (amperes)

-0.6 1.2
V(th) @ -1.0mA
1.2

-0.4 TA = 125°C 1.0

1.0

-0.2 0.8

0.8

0 0.6
0 -2 -4 -6 -8 -10 -50 0 50 100 150
VGS (volts) Tj (°C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

100 -10

f = 1MHz
VDS = -10V
-8
75

70 pF VDS = -40V
C (picofarads)

VGS (volts)

-6

50 70 pF
CISS
-4

25 COSS
-2

45pF
CRSS
0 0
0 -10 -20 -30 -40 0 0.2 0.4 0.6 0.8 1.0
VDS (volts) QG (nanocoulombs)

07/08/02

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 www.supertex.com