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Manual IRF530

1) The IRF530 and IRF530FI are N-channel enhancement mode power MOS transistors with maximum drain-source voltages of 100V and continuous drain currents of 16A and 11A respectively. 2) They feature low on-resistance, high current capability, avalanche ruggedness, and operation up to 175°C case temperature. 3) Typical applications include high current switching, solenoid and relay drivers, DC-DC and DC-AC converters, and automotive systems like injection systems, ABS, airbags, and lamp drivers.

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0% found this document useful (0 votes)
119 views7 pages

Manual IRF530

1) The IRF530 and IRF530FI are N-channel enhancement mode power MOS transistors with maximum drain-source voltages of 100V and continuous drain currents of 16A and 11A respectively. 2) They feature low on-resistance, high current capability, avalanche ruggedness, and operation up to 175°C case temperature. 3) Typical applications include high current switching, solenoid and relay drivers, DC-DC and DC-AC converters, and automotive systems like injection systems, ABS, airbags, and lamp drivers.

Uploaded by

karlmar32
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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IRF530

 IRF530FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V DSS R DS(on) ID
IRF530 100 V < 0.16 Ω 16 A
IRF530F I 100 V < 0.16 Ω 11 A
■ TYPICAL RDS(on) = 0.12 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY 3 3
2 2
■ 175oC OPERATING TEMPERATURE 1 1
■ APPLICATION ORIENTED
CHARACTERIZATION TO-220 ISOWATT220

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ DC-DC & DC-AC CONVERTER INTERNAL SCHEMATIC DIAGRAM


■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMP DRIVERS Etc.)

ABSOLUTE MAXIMUM RATINGS


Symb ol Parameter Value Unit
IRF530 IRF530FI
V DS Drain-source Voltage (V GS = 0) 100 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 100 V
V GS G ate-source Voltage ± 20 V
o
ID Drain Current (continuous) at Tc = 25 C 16 11 A
ID Drain Current (continuous) at Tc = 100 o C 11 7.8 A
I DM (•) Drain Current (pulsed) 64 64 A
o
P tot T otal Dissipation at Tc = 25 C 90 40 W
o
Derating Factor 0.6 0.27 W/ C
Viso Insulation W ithstand Voltage (DC) - 2000 V
o
T s tg Storage T emperature -65 to 175 C
o
Tj Max. O perating Junct ion T emperature 175 C
(•) Pulse width limited by safe operating area ( 1) ISD ≤16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
March 1999 1/6
IRF530/FI

THERMAL DATA
TO-220 T O-220FI
o
R thj -case Thermal Resistance Junction-case Max 1 3.75 C/W
o
R thj -amb Thermal Resistance Junction-ambient Max 62.5 C/W
o
R thc-sink Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature F or Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symbo l Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 16 A
(pulse width limited by Tj max, δ < 1%)
E AS Single Pulse Avalanche Energy 100 mJ
(starting Tj = 25 o C, ID = IAR , V DD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V (BR)DSS Drain-source I D = 250 µA V GS = 0 100 V
Breakdown Voltage
I DSS Zero Gate Voltage V DS = Max Rating 1 µA
Drain Current (V GS = 0) V DS = Max Rating T c = 125 oC 10 µA
IGSS Gate-body Leakage V GS = ± 20 V ± 100 nA
Current (VDS = 0)

ON (∗)
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA 2 3 4 V
R DS(on) Static Drain-source On V GS = 10V ID = 8 A 0.12 0.16 Ω
Resistance
I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x 16 A
V GS = 10 V

DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
g f s (∗) Forward V DS > ID(o n) x R DS(on )ma x ID = 8 A 5 8 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz V GS = 0 950 1300 pF
C os s Output Capacitance 150 270 pF
C rss Reverse Transfer 50 70 pF
Capacitance

2/6
IRF530/FI

ELECTRICAL CHARACTERISTICS (continued)


SWITCHING ON
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
t d(on) Turn-on Time V DD = 50 V ID = 8 A 12 16 ns
tr Rise Time R G = 4.7 Ω V GS = 10 V 20 28 ns

Qg Total G ate Charge V DD =80 V I D =16 A V GS = 10 V 32 44 nC


Q gs Gate-Source Charge 9 nC
Q gd Gate-Drain Charge 13 nC

SWITCHING OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
tr (Voff) Off-voltage Rise T ime V DD = 80 V I D =16 A 11 15 ns
tf Fall T ime R G = 4.7 Ω VGS = 10 V 12 17 ns
tc Cross-over Time 25 35 ns

SOURCE DRAIN DIODE


Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
ISD Source-drain Current 16 A
I SDM (•) Source-drain Current 64 A
(pulsed)
V SD (∗) Forward On Voltage I SD = 16 A V GS = 0 1.6 V
t rr Reverse Recovery I SD =16 A di/dt = 100 A/µs 150 ns
o
Time V DD = 30 V Tj = 150 C
Q rr Reverse Recovery 0.8 µC
Charge
I RRM Reverse Recovery 10 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

3/6
IRF530/FI

TO-220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
E
A

D
C

D1

L2
F1

G1

H2
G

Dia.
F
F2

L5
L9
L7

L6 L4
P011C

4/6
IRF530/FI

ISOWATT220 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126

E
A

D
B

L3

L6
L7
F1

¯
G1

G
H

F2

1 2 3

L2 L4
P011G

5/6
IRF530/FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved


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