ECE
305
Spring
2015
SOLUTIONS:
ECE
305
Homework:
Week
2
Mark
Lundstrom
Purdue
University
1) Sketch
the
following
planes
or
directions.
a) ( 010 )
b) ⎡⎣010 ⎤⎦
c) ( 203)
d) ( 11 1 )
Solution:
1a)
(010)
is
a
plane.
Note
that
a
similar
plane
with
a
y-‐intercept
at
2a,
or
3a
would
also
be
an
(010)
plane.
1b)
[010]
is
a
direction
normal
to
the
plane
in
1a)
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305
Homework
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SOLUTIONS:
Week
2
(continued)
1c)
(203)
is
a
plane
1d)
( 11 1 )
is
a
plane
Note
that
a
similar
plane
with
intercepts
at
x = −a, y = a, z = −a
would
also
be
a
( 11 1 )
plane.
In
general,
{h,
k,
l}
denotes
a
family
of
planes.
2) Consider
a
hydrogen
atom
(1
electron
orbiting
one
proton).
Suppose
that
we
excite
the
electron
from
the
ground
state
to
the
first
excited
state
(see
Fig.
2.1
in
Pierret,
SDF).
a) The
electron
relaxes
to
the
ground
state
and
emits
a
photon.
What
is
the
energy
of
this
photon
(in
eV)?
b) What
is
the
wavelength,
λ,
of
the
photon
in
vacuum?
It
may
be
helpful
to
recall
that
E = hν ,
where
h
is
Planck’s
constant
and
ν
is
the
frequency,
and
c = λν ,
where
c
is
the
speed
of
light.
Pay
attention
to
units.
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ECE
305
Homework
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SOLUTIONS:
Week
2
(continued)
Solution:
2a)
From
Fig.
2.1
in
Pierret,
SDF:
E0 = −13.6 eV
(ground
state)
E1 = −3.4 eV
(first
excited
state)
(Note
that
E = 0 is
the
energy
of
the
electron
infinitely
far
away
from
the
proton.
( )
E ph = −3.4 − −13.6 = 10.2 eV
(photon
energy)
E ph = 10.2 eV
c c hc
2b)
λ = = =
ν E ph h E ph
λ=
hc
=
( )(
6.626 × 10−34 J-s 3.00 × 108 m/s
= 1.22 × 10−7 m
)
E ph 10.2 × 1.6 × 10 −19
(J )
Careful:
Be
sure
to
use
MKS
(SI)
units
–
meters
for
distance,
meters/second
for
velocity,
and
Joules
for
energy.
λ ph = 122 nm
3) Consider
Si
( EG = 1.1 eV ),
Ge
( EG = 0.67 eV )
and
GaAs
( EG = 1.4 eV ).
a) Using
the
same
vertical
scale
,
draw
a
simple
energy
band
diagram
(showing
EC
and
EV )
for
each
of
the
three
materials.
b) On
the
energy
band
diagram
for
Si,
illustrate
an
electron
in
the
conduction
band.
c) On
the
energy
band
diagram
for
Ge,
illustrate
a
hole
in
the
valence
band.
Solution:
3a)
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SOLUTIONS:
Week
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(continued)
A
comment
on
the
sketched
in
Fig.
3a).
We
arbitrarily
aligned
the
valence
bands
of
each
of
the
three
semiconductors.
In
general,
these
bands
do
not
line
up.
The
precise
band
line
ups
are
critical
when
making
“heterojunctions”,
which
put
two
different
semiconductors
together.
3b)
An
electron
in
the
conduction
band
is
a
filled
state
in
the
conduction
band.
It
is
a
carrier
of
negative
charge.
3c)
A
hole
in
the
valence
band
is
an
empty
state
in
the
valence
band.
It
is
a
carrier
of
positive
charge.
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SOLUTIONS:
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(continued)
4) Consider
a
region
of
Si,
which
is
a
perfect
single
crystal
except
for
the
phosphorous
atom
shown
in
the
figure
below.
Note
that
the
P
atom
has
donated
one
electron
to
the
lattice
(as
shown).
a) Find
the
net
charge
within
Region
A.
b) Find
the
net
charge
within
Region
B.
c) Repeat
parts
a)
and
b),
assuming
that
the
P
atom
has
been
replaced
with
a
B
atom
and
that
the
B
atom
has
accepted
one
electron,
and
that
the
corresponding
hole
is
within
region
B.
Solutions:
4a)
Phosphorus
is
from
column
V,
so
there
are
5
valence
electrons.
Four
of
the
valence
electrons
form
covalent
bonds
with
four
Si
nearest
neighbors.
The
fifth
electron
is
weakly
bound.
The
thermal
energy
breaks
the
bond,
so
the
Phosphorus
has
lost
one
electron
and
has
a
positive
charge
of
q.
The
charge
in
region
A
is
+q = 1.60 × 10−19 C
4b)
Region
B
was
neutral,
until
the
fifth
electron
from
the
phosphorus
broke
its
bond
and
moved
to
region
B.
Region
B
now
has
one
extra
electron.
The
charge
in
region
B
is
−q = −1.60 × 10−19 C
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SOLUTIONS:
Week
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(continued)
4c)
Boron
is
from
column
III,
so
there
are
3
valence
electrons.
An
additional
electron
is
obtained
from
the
thermal
energy
that
breaks
on
of
the
Si-‐Si
bonds.
Now
there
are
four
electrons
for
the
Boron
atom
to
form
covalent
bonds
with
four
Si
nearest
neighbors.
The
Boron
atom
has
acquired
one
additional
electron,
so
it
now
has
a
negative
charge
of
-‐q.
The
charge
in
region
A
is
−q = −1.60 × 10−19 C
Region
B
was
neutral,
until
one
of
the
Si
bond
was
broken;
the
electron
moved
to
region
A.
Region
B
now
has
one
fewer
electrons,
so
it
has
acquired
a
positive
charge.
The
charge
in
region
B
is
+q = +1.60 × 10−19 C
5) Consider
the
conduction
band
of
Si.
Typically,
only
the
states
near
the
bottom
of
the
conduction
band
are
occupied
with
electrons.
Assume
that
all
states
within
0.1
eV
of
the
bottom
of
the
band
are
occupied
and
answer
the
following
questions.
5a)
How
many
electrons
are
in
the
conduction
band?
Express
your
answer
per
cm3.
5b)
Compare
this
number
to
the
atomic
density
of
Si.
Solution:
mn* 2mn* ( E − EC )
5a)
The
density
of
states
is
g c ( E ) =
(This
expression
assume
that
two
π 2!3
electrons
occupy
each
state.)
The
number
of
filled
states
is
EC +0.1eV EC +0.1eV
mn* 2mn* mn* 2mn* 2 EC +0.1eV
g c ( E )dE = ( E − EC ) dE = ( E − EC )
1/2 3/2
Ne = ∫
EC π 2!3 ∫
EC π ! 3
2 3
EC
mn* 2mn* 2
( )
3/2
Ne = 0.1× 1.6 × 10−19
(convert
eV
to
Joules)
π ! 3
2 3
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305
Homework
Week
2
SOLUTIONS
(continued)
For
Si,
mn* = 1.18m0 = 1.18 × 9.11× 10−31 kg
(Table
2.1,
p.
34,
SDF)
mn* = 1.07 × 10−30 kg
( ) 2 (0.16 × 10 ) ( ) × 0.667 × ( 2.02 × 10 )
3/2
2 mn* −19
3/2 1.414 × 1.11× 10−45 −30
Ne = =
π ! ( )
2 3 3
3 9.87 × 1.055 × 10 −34
1.414 × 0.667 1.11× 10−45 2.02 × 10−30
Ne = −34
× −34
× −34
= 1.82 × 1026 m −3
9.87 × 1.055 × 10 1.055 × 10 1.055 × 10
(Note
the
order
of
the
divisions
so
that
my
calculator
does
not
underflow.)
The
answer
is
per
cubic
meter
because
we
have
done
all
the
calculations
in
MKS
units,
but
we
are
asked
for
a
number
per
cubic
centimeter.
3
⎛ m ⎞
N e = 1.82 × 10 m × ⎜ 2 ⎟ = 1.82 × 1020 cm −3
N e = 1.82 × 1020 cm −3
26 −3
⎝ 10 cm ⎠
Note
that
this
is
considered
to
be
a
very
large
concentration
of
electrons
in
the
conduction
band.
5b)
Silicon
(Si)
has
a
diamond
crystal
structure
and
a
lattice
spacing
of
a
=
5.42
Angstroms.
The
atomic
density
is:
8
Na = cm −3 = 5.02 × 1022 cm −3
( )
3
−8
5.42 × 10
N e 1.82 × 1020
= = 0.004
N a 5.02 × 1022
Ne
= 0.04%
Na
Note
that
a
high
concentration
of
electrons
in
the
conduction
band
is
only
0.04%
of
the
atomic
density.
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