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Silicon NPN Power Transistors: 2SD600 2SD600K

This document provides product specifications for the SavantIC Semiconductor 2SD600 and 2SD600K silicon NPN power transistors. The transistors feature a TO-126 package, breakdown voltages of 100V/120V, current of 1A, and low saturation voltage, making them suitable for low-frequency power amplifier applications. Key specifications include maximum ratings, characteristics, switching times, and package outline dimensions.

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Flavio Tonello Tavares
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98 views4 pages

Silicon NPN Power Transistors: 2SD600 2SD600K

This document provides product specifications for the SavantIC Semiconductor 2SD600 and 2SD600K silicon NPN power transistors. The transistors feature a TO-126 package, breakdown voltages of 100V/120V, current of 1A, and low saturation voltage, making them suitable for low-frequency power amplifier applications. Key specifications include maximum ratings, characteristics, switching times, and package outline dimensions.

Uploaded by

Flavio Tonello Tavares
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

DESCRIPTION
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage VCEO100/120V
·High current 1A
·Low saturation voltage

APPLICATIONS
·For low-frequency power amplifier
applications

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base

3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

2SD600 100
VCBO Collector-base voltage Open emitter V
2SD600K 120

2SD600 100
VCEO Collector-emitter voltage Open base V
2SD600K 120

VEBO Emitter-base voltage Open collector 5 V

IC Collector current (DC) 1 A

ICM Collector current-peak 2 A

Ta=25 1
PD Total power dissipation W
TC=25 8

Tj Junction temperature 150

Tstg Storage temperature -55~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

2SD600 100
Collector-emitter
V(BR)CEO IC=1mA; RBE== V
breakdown voltage
2SD600K 120

2SD600 100
Collector-base
V(BR)CBO IC=10µA ;IE=0 V
breakdown voltage
2SD600K 120

V(BR)EBO Emitter-base breakdown voltage IE=10µA ;IC=0 5 V

VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 0.4 V

VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50mA 1.2 V

ICBO Collector cut-off current VCB=50V; IE=0 1 µA

IEBO Emitter cut-off current VEB=4V; IC=0 1 µA

hFE-1 DC current gain IC=50mA ; VCE=5V 60 320

hFE-2 DC current gain IC=0.5A ; VCE=5V 20

fT Transition frequency IC=50mA ; VCE=10V 130 MHz

COB Collector output capacitance f=1MHz ; VCB=10V 20 pF

Switching times

tf Fall time 0.1 µs

IC=500mA ; VCE=12V
toff Turn-off time 0.5 µs
IB1=-IB2=50mA

tstg Storage time 0.7 µs

hFE-1 Classifications
D E F

60-120 100-200 160-320

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

PACKAGE OUTLINE

Fig.2 Outline dimensions

3
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SD600 2SD600K

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