T - Type 60kW
T - Type 60kW
   Abstract—A silicon carbide (SiC) T-type LCL inverter can                          substitute Si insulated-gate bipolar transistor (IGBT) in a 17-
achieve smaller device loss than two-level topology, how-                            kW three-phase string inverter based on the three-level T-type
ever, its improvement on power density is limited by current                         (3LT2 ) topology. Peak efficiency has been increased from 98.2%
ripple loss on magnetic components as switching frequency
increases. This paper presents a five-level T-type (5LT2 ) pho-                      to 98.8%. However, using a SiC device without increasing power
tovoltaic (PV) inverter that achieves better utilization of SiC                      density is not beneficial to lower the system level cost, which
devices than the traditional three-level T-type LCL topology                         poses a major disadvantage in the highly competitive PV inverter
at higher switching frequency. The operation principle of the                        markets. SiC PV inverters presented in [8]–[13] can achieve
SiC 5LT2 PV inverter has been presented. The key design
                                                                                     better power density by increasing the switching frequency so
aspects including magnetic balancing, short-circuit protec-
tion, and digital controller computation time have been dis-                         that the components cost can be reduced. In [8], an air-cooled
cussed and methods are developed. A 60-kW PV converter                               50-kW three-phase two-stage all SiC PV inverter was presented.
including boost stage and inverter stage has been built in                           The dc–dc stage is an interleaved boost converter switching at
the laboratory, which achieves a power density of 27 W/in3                           75 kHz and the dc–ac stage is a 3LT2 inverter switching at 50
and 3 kW/kg, and measured peak efficiency of 99.2%.                                  kHz. The power density of this PV inverter is 1 kW/kg, which is
  Index Terms—DC–AC power converters, photovoltaic                                   about three times higher than that of conventional Si-based PV
(PV) systems, silicon carbide mosfet.                                                inverters. A multiobjective optimization method was proposed
                                                                                     in [9] to evaluate the cost of optimal designed Si-based and SiC-
                            I. INTRODUCTION                                          based PV inverters. Results of [9] concluded that in a 10-kW
                                                                                     three-phase string inverter application, a SiC MOSFET based two-
      HOTOVOLTAIC (PV) converters, especially the three-
P     phase string inverters have been under rapid growth in the
market share. A three-phase string inverter is a two-stage inverter
                                                                                     level inverter switching at 44 kHz can achieve 5% components
                                                                                     cost reduction and 22% life cycle cost reduction, compared with
                                                                                     a Si IGBT based 3LT2 inverter switching at 18 kHz. However,
connected to three-phase utility grid without a transformer [1],                     researchers in [11] and [12] also showed that the increment in
[2]. The typical power ratings of three-phase string inverters are                   power density and efficiency by using the direct replacing device
from 10 to 100 kW. The silicon carbide (SiC) based PV string                         approach has its limitations. The main reason is that as the
inverters have been researched and developed recently because                        switching frequency increases, the switching frequency current
of the technology maturity of 1200 V SiC devices. Although                           ripple on inductors will generate additional specific power loss
it is well accepted that SiC devices have significant advantages                     thereby the inductors have to be oversized in order to dissipate
over Si devices in terms of switching loss, switching speed, and                     this power loss.
temperature stability [3]–[6], a number of technical challenges                         A major challenge existing in a SiC PV inverter design is
have remained to transfer the device level advantages to system                      that the advance in SiC devices exceeds the advance in high-
level benefits.                                                                      frequency (HF) magnetic materials. To solve this issue, this
    Currently, the common practice to develop a SiC-based PV                         paper explores and demonstrates the benefits of applying the
inverter is to directly replace the Si devices with SiC devices                      five-level T-type (5LT2 ) topology [14] in a SiC-based three-
in conventional topologies. In [7], SiC JFETs were used to                           phase string PV inverter to increase its power density and ef-
                                                                                     ficiency. As shown in Fig. 1, each phase of the 5LT2 inverter
   Manuscript received November 18, 2016; revised February 11, 2017                  consists of two 3LT2 inverter modules and a coupled inductor.
and March 27, 2017; accepted April 18, 2017. Date of publication May 9,              The 3LT2 topology has the benefits of both two-level and three-
2017; date of current version October 9, 2017. (Corresponding author:
Hui Li.)
                                                                                     level inverters such as low conduction loss, low switching loss,
   Y. Shi, L. Wang, R. Xie, and H. Li are with the Center for Advanced               superior output voltage quality, small part count, and simple
Power Systems, Florida State University, Tallahassee, FL 32310 USA                   operation principle [15]–[17]. It has become the most popular
(e-mail: yshi3@caps.fsu.edu; lw15r@my.fsu.edu; rx14@my.fsu.edu;
hli@caps.fsu.edu).
                                                                                     topology for three-phase PV string inverters since 2011. In ad-
   Y. Shi is with the ABB Corporate Research Center, Raleigh, NC 27606               dition, using a coupled inductor to reduce ripple current or to
USA (e-mail: yuxiang.shi@us.abb.com).                                                generate more voltage levels is well acknowledged in the com-
   Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
                                                                                     munity in the past century [14], [18]–[22] and the total device
   Digital Object Identifier 10.1109/TIE.2017.2701762                                rating of 5LT2 topology is equal to that of 3LT2 topology for
   0278-0046 © 2017 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution
                   requires IEEE permission. See http://www.ieee.org/publications standards/publications/rights/index.html for more information.
SHI et al.: 60-KW 3-KW/KG FIVE-LEVEL T-TYPE SIC PV INVERTER WITH 99.2% PEAK EFfiCIENCY                                                         9145
                             TABLE II
                 SWITCHING STATES OF 3LT2 INVERTER
Switching States T1 T2 T3 T4
                P                   1     1     0     0
                O                   0     1     1     0
                N                   0     0     1     1
                                                                            Fig. 4. Inductance needed for 3LT2 topology and 5LT2 topology to limit
                                                                            largest current harmonic under 5% of fundamental current at different
                                                                            switching frequencies.
of the high switching frequency, required line inductance is           best power density, the ICT is designed with high permeability
small enough so that the grid impedance can be used as filter.         material with little air gap. Unlike inductors, when ICT saturates,
Therefore, the ICT can be designed with a very small leakage           the saturation current will increase rapidly and may trigger the
inductance, so there is only switching frequency magnetic flux         short-circuit protection of the two T-type modules from the same
in the magnetic core.                                                  phase.
   Compared with a 3LT2 inverter with an LCL filter, the ICT-             Two kinds of methods are used in this research to reduce the
based 5LT2 inverter has following advantages for high switching        circulating current. The first one is to eliminate the circulating
frequency application.                                                 current through closed-loop control. The second one is based
    1) Smaller magnetic components size and power loss. An             on a modulation technique to balance the winding volt-seconds
       LCL filter can achieve −60 dB/dec harmonic atten-               within half switching cycle, so that peak-to-peak value of the
       uation, but this is at the cost of increasing current           circulating current can be further reduced.
       ripple on inverter-side inductor L1 . When switching fre-          The method for closed-loop circulating current control can
       quency increases, although the requirement for LCL value        be found in [26]. It should be noted that differential current sen-
       will decrease, the additional HF power loss on L1 will          sor is preferred in this application, for its better accuracy and
       generate heat that is hard to be dissipated. As a result,       noise shielding ability. However, the bandwidth of the differ-
       both the size and value of L1 have to be designed larger        ential current sensor (usually less than 10 kHz) also prevents
       than what is needed by harmonic attenuation requirement.        the closed-loop control from detecting and eliminating the peak
       On the other hand, because there is no fundamental fre-         value of the circulating current. Therefore, a modulation-based
       quency flux in the ICT, the magnetizing inductance can          method is also applied.
       be designed large enough to suppress the HF current of             Fig. 5(a) and (b) shows the conventional and proposed
       ICT without sacrificing the power density.                      method to balance ICT volt-seconds within half switching cycle.
    2) Decoupled magnetic design. Basically there is only fun-         The saber simulation results of each method are compared in
       damental frequency current in the ICT windings and only         Fig. 5(c) and (d). However, the proposed method also requires
       switching frequency flux in its core. So, the magnetic de-      updating controller output in every half switching cycle.
       sign is decoupled and the core loss and winding loss can
       be predicted with more accuracy, therefore less design          B. T-Type Module Short-Circuit Protection
       margin is needed.
                                                                          Fig. 6 shows the short-circuit scenarios for a 5LT2 inverter.
    3) No LCL resonant issues. The ICT-based 5LT2 inverter
                                                                       Addition to the typical T-type short circuit shown in Fig. 6(a)
       is modeled as a single L inverter in grid current control
                                                                       and (b), two extra short-circuit modes will occur when ICT is
       loop. It does not have LCL filter related stability issues.
                                                                       saturated, as shown in Fig. 6(c) and (d). The challenges for
    4) Reduced size of CM chock for ground leakage current
                                                                       short-circuit protection are: 1) in the T-type module, there is no
       suppression. Compared to a 3LT2 inverter with the same
                                                                       pin leads to the middle point of T-branch (T2 and T3 ) so the
       switching frequency, the three-phase CM volt-seconds
                                                                       protection circuit can only be applied to I-branch (T1 and T4 ).
       (Vcm /fs ) of the 5LT2 inverter is reduced by 86%. There-
                                                                       However, at P-0 or N-0 short, it is T-branch that first reaches sat-
       fore, the CM choke required for ground leakage current
                                                                       uration. So, the reaction of protection circuit must be faster but
       suppression is much smaller. More detailed analysis of
                                                                       not too fast to cause false protection; 2) in PV application, the dc-
       this issue can be found in another paper generated from
                                                                       link voltage can be as high as 1000 V. If the switches are turned
       this research [25].
                                                                       OFF too fast during projection, over voltage will easily break
                                                                       down the device. Our experiment shows that it is still possible
                   III. KEY DESIGN ASPECTS
                                                                       to achieve short-circuit protection based on the de-sat protection
   Since a 5LT2 inverter consists of two paralleled 3LT2 in-           function of a commercially available IGBT drive IC ACPL339J.
verters, most of the designs of 5LT2 inverters are similar to          Some modifications were made to the typical de-sat protection
that of 3LT2 inverters. However, listed below are three key de-        circuit, including added extra charging pass to adjust blanking
sign aspects that are unique for the SiC-based 5LT2 inverter.          time, applied a two-stage soft turn-off circuit, and added a gate
The corresponding detailed analysis and developed methods are          stabilizer to prevent crosstalk. Both short-circuit experiments
presented as follows.                                                  and double pulse test (DPT) were performed at room tempera-
                                                                       ture and designed junction temperature (113 °C). Experiments
A. Magnetic Flux Balancing and Circulating Current                     show that the reaction time of short-circuit protection is within
Control                                                                600 ns. Detailed circuit design and more experimental results
                                                                       are presented in [27].
  In this paper, the circulating current of an ICT is defined as
             icir = ip1 − ip2 , where p ∈ {a, b, c} .            (5)   C. Digital Controller Computation Time Reduction
   It is important to eliminate the circulating current because:         When switching frequency increases, digital sample, and I/O
1) the size of ICT is directly related to its maximum magnetic         delay will consume a significant part of DSP interruption time.
flux, with better circulating current control technique, less de-      In this research project, a TI TMS320F28335 DSP + Xilinx
sign margin is needed to prevent saturation; and 2) to achieve         XC3S200AN field-programmable gate array (FPGA) structure
9148                                                         IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 64, NO. 11, NOVEMBER 2017
Fig. 5. Influence of digital controller update methods on magnetic balancing: (a) conventional method: update comparator at the beginning of
each counter; (b) modified method: update comparator at the beginning and peak of each counter; (c) simulated ICT circulating current under
conventional method; and (d) simulated ICT circulating current under modified method.
                                                                                                            TABLE III
                                                                                               60-KW SIC PV CONVERTER PARAMETERS
Parameters Values
Fig. 9. Double-pulse test results: (a) test setup and (b) DPT test
waveforms.
                                                                     Fig. 11. Thermal experiments: (a) thermal stress experiment setup and
                                                                     (b) thermal stress experiment results.
CEC efficiency is 98.9%. The CEC efficiency at 500 V input                    A power loss breakdown analysis consisting of both boost
and 600 V input are 97.5% and 97.8%, respectively. The peak                stage and inverter stage is shown in Fig. 17. The three ICTs
efficiency above four input conditions is reached at operating             consume 9% of system total power loss and amount to 7.5% of
points in the range of 40–50 kW.                                           system total weight.
SHI et al.: 60-KW 3-KW/KG FIVE-LEVEL T-TYPE SIC PV INVERTER WITH 99.2% PEAK EFfiCIENCY                                                             9153
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9154                                                                   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 64, NO. 11, NOVEMBER 2017
[23] H. Li and Y. Shi, “A self-balanced modulation and magnetic rebalancing                                 Ren Xie (S’15) received the B.S. and M.S. de-
     method for parallel multilevel inverters,” U.S. Patent disclosure, Oct. 2016.                          grees in electrical engineering from Zhejiang
[24] T. Zhao, V. Bhavaraju, P. Nirantare, and J. Xu, “Evaluation of commercial                              University, Hangzhou, China, in 2010 and 2013,
     scale transformerless solar inverter technology,” in Proc. IEEE Energy                                 respectively. He is currently working toward the
     Convers. Congr. Expo., Sep. 2015, pp. 5342–5348.                                                       Ph.D. degree in electrical engineering at the De-
[25] L. Wang, Y. J. Shi, Y. X. Shi, R. Xie, and H. Li, “Ground leakage current                              partment of Electrical and Computer Engineer-
     analysis and suppression in a 60 kW 5-level T-type transformerless SiC                                 ing, Florida State University of Tallahassee, FL,
     PV inverter,” IEEE Trans. Power Electron., to be published.                                            USA.
[26] F. Forest, T. A. Meynard, J. J. Huselstein, D. Flumian, C. Rizet, and                                     His research interest includes WBG devices
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[28] Y. J. Shi, Y. X. Shi, R. Xie, L. Wang, and H. Li, “A 50 kW high
     power density paralleled-five-level PV inverter based on SiC T-type MOS-
     FET modules,” in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2016,                                   Yuxiang Shi (S’13–M’17) received the B.S.
     pp. 1–8.                                                                                               degree from Xi’an Jiaotong University, Xi’an,
                                                                                                            China, in 2007, the M.S. degree from Zhejiang
                                                                                                            University, Hangzhou, China, in 2010, and the
                                                                                                            Ph.D. degree from Florida State University,
                                                                                                            Tallahassee, FL, USA, all in electrical
                      Yanjun Shi (S’11–M’13) received the B.S. de-                                          engineering.
                      gree in electrical engineering and the Ph.D. de-                                          From 2010 to 2011, he was an Electrical
                      gree in power electronics from the Huazhong                                           Engineer at the Philips Lighting Electronics,
                      University of Science and Technology, Wuhan,                                          Shanghai, China. Since November 2016, he
                      China, in 2007 and 2012, respectively.                                                has been a Research Scientist with the ABB
                          He is currently a member of the Research                   Corporate Research Center, Raleigh, NC, USA. His current research
                      Faculty at the Center for Advanced Power                       interests include the WBG devices and their applications in renewable
                      System, Florida State University, Tallahassee,                 and battery energy conversion.
                      FL, USA. His research interests include grid-
                      connected PV system, high power density PV
                      inverter, high-penetration PV integration, wide-
bandgap device application, modeling, and control of power electronics
converters.