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Features: Low-Frequency Power Amp, Electronic Governor Applications

This document provides specifications for a TO-92MOD packaged NPN transistor. It lists maximum ratings including voltage and current limits. It also provides typical electrical characteristics such as current gain, saturation voltages, and transition frequency. The transistor is intended for low-frequency power amplifier and electronic governor applications.

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aldi sansss
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50 views2 pages

Features: Low-Frequency Power Amp, Electronic Governor Applications

This document provides specifications for a TO-92MOD packaged NPN transistor. It lists maximum ratings including voltage and current limits. It also provides typical electrical characteristics such as current gain, saturation voltages, and transition frequency. The transistor is intended for low-frequency power amplifier and electronic governor applications.

Uploaded by

aldi sansss
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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2SD400

TO-92MOD Transistor (NPN)

TO-92MOD
1. EMITTER 5.800
1 6.200
2
3 2. COLLECTOR
8.400
3. BASE 8.800

0.900
1.100

Features 0.400
0.600

13.800
— Low-Frequency power Amp, Electronic Governor Applications 14.200

MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 1.500 TYP


2.900
3.100
Symbol Parameter Value Units
0.000 1.600
VCBO Collector-Base Voltage 25 V 0.380
0.400 4.700
VCEO Collector-Emitter Voltage 25 V 0.500 5.100

VEBO Emitter-Base Voltage 5 V


1.730
4.000 2.030
IC Collector Current -Continuous 1 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.9 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 25 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V

Collector cut-off current ICBO VCB=20V, IE=0 1 µA

Emitter cut-off current IEBO VEB=4V, IC=0 1 µA

hFE(1) VCE=2V, IC=50mA 60 560


DC current gain
hFE(2) VCE=2V, IC=1A 30

Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.3 V

Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V

Transition frequency fT VCE=10V, IC=50mA 180 MHz

Output Capacitance Cob VCB=10V, f=1MHz 15 pF

CLASSIFICATION OF hFE(1)
Rank D E F G
Range 60-120 100-200 160-320 280-560
2SD400
TO-92MOD Transistor (NPN)

Typical Characteristics

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