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Color TV Horizontal Deflection Output Applications

This document provides specifications for the 2SD1651C NPN triple diffused planar silicon transistor. Key details include: - It is intended for use in color TV horizontal deflection output applications. - Features include high speed, high breakdown voltage up to 1500V, high reliability, and an on-chip damper diode. - The document lists absolute maximum ratings, electrical characteristics, package dimensions, and notes regarding applications requiring extremely high reliability. - Specifications include collector-to-base voltage, collector current, current gain, voltage and current ratings, and more.

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Gabriel Wilke
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0% found this document useful (0 votes)
93 views4 pages

Color TV Horizontal Deflection Output Applications

This document provides specifications for the 2SD1651C NPN triple diffused planar silicon transistor. Key details include: - It is intended for use in color TV horizontal deflection output applications. - Features include high speed, high breakdown voltage up to 1500V, high reliability, and an on-chip damper diode. - The document lists absolute maximum ratings, electrical characteristics, package dimensions, and notes regarding applications requiring extremely high reliability. - Specifications include collector-to-base voltage, collector current, current gain, voltage and current ratings, and more.

Uploaded by

Gabriel Wilke
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

Ordering number : ENN7086

2SD1651C
www.DataSheet4U.com
NPN Triple Diffused Planar Silicon Transistor

2SD1651C
Color TV Horizontal Deflection
Output Applications

Features Package Dimensions


• High speed. unit : mm
• High breakdown voltage(VCBO=1500V). 2174A
• High reliability(Adoption of HVP process). [2SD1651C]
• Adoption of MBIT process. 16.0
3.4 5.6
3.1
• On-chip damper diode.

5.0

8.0
22.0
21.0

0.8
4.0
2.8
2.0 2.1

20.4
0.7 0.9

1 2 3

5.45 1 : Base

3.5
2 : Collector
Specifications 3 : Emitter
5.45
Absolute Maximum Ratings at Ta=25°C SANYO : TO-3PMLH

Parameter Symbol Conditions Ratings Unit


Collector-to-Base Voltage VCBO 1500 V
Collector-to-Emitter Voltage VCEO 800 V
Emitter-to-Base Voltage VEBO 6 V
Collector Current IC 6 A
Collector Current (Pulse) ICP 15 A
3.0 W
Collector Dissipation PC
Tc=25°C 60 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=800V, IE=0 10 µA
Collector Cutoff Current ICES VCE=1500V, RBE=0 1.0 mA
Collector Sustain Voltage VCEO(sus) IC=100mA, IB=0 800 V
Emitter Cutoff Current IEBO VEB=4V, IC=0 40 130 mA
hFE1 VCE=5V, IC=0.5A 10
DC Current Gain
hFE2 VCE=5V, IC=3.5A 5 8
Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.15A, IB=0.63A 3 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=3.15A, IB=0.63A 1.5 V
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3439 No.7086-1/4
2SD1651C
www.DataSheet4U.com
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Fall Time tf IC=2A, IB1=0.4A, IB2=--0.8A 0.3 µs
Diode Forward Voltage VF IEC =6A 2 V

Switching Time Test Circuit

IB1
PW=20µs OUTPUT
D.C.≤1% IB2

INPUT RB
VR RL=100Ω

50Ω
+ +
100µF 470µF

VBE= --2V VCC=200V

IC -- VCE IC -- VBE
6 7
A

1.4A VCE=5V
2.0

1.2A
1.0A 6
5
1.6A
0.8A
Collector Current, IC -- A
Collector Current, IC -- A

1.8A 5
4 0.6A

0.4A 4

3
0.2A 3

2
2
0°C

0.05A
C
2

°C
=1

25°

1
Ta

1
-40

IB=0
0 0
0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT01908 Base-to-Emitter Voltage, VBE -- V IT01909
hFE -- IC VCE(sat) -- IC
5 5
VCE=5V IC / IB=5
3
°C
°C

3
120°C

120 2
Saturation Voltage, VCE(sat) -- V

Ta=
Ta= --4

2
°C
25°C

1.0
DC Current Gain, hFE

25 7
0°C 5
10 --4
Collector-to-Emitter

3
7 2

5 Ta= --40
0.1 ° C
7
3 5
120°C
25°C
2 3
2

1.0 0.01
0.1 2 3 5 7 1.0 2 3 5 710 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT01910 Collector Current, IC -- A IT01911

No.7086-2/4
2SD1651C
www.DataSheet4U.com SW Time -- IC SW Time -- IB2
7 10
VCC=200V 7
VCC=200V
5 IC=2A
tstg IC / IB1=5
5
IB2 / IB1=2 ts IB1=0.4A
Switching Time, SW Time -- µs

Switching Time, SW Time -- µs


3
R load tg R load
3
2
2

1.0
1.0
7
7

tf
5
5

3 3
tf
2 2

0.1 0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 0.1 2 3 5 7 1.0 2 3 5
Collector Current, IC -- A IT01912 Base Current, IB2 -- A IT01913
Forward Bias A S O Reverse Bias A S O
5 5
3 L=500µH
3
2 ICP=15A IB2= --1A
2
10 IC=6A P
P T 00µ

7 C =6
Collector Current, IC -- A

Collector Current, IC -- A
0W
=1

5 10
00

7
3

3
µs

2 5
s
1m

1.0 3
s

7 2
10

5
ms

3
DC

2 1.0
op

7
era

0.1 5
tio

7
n

5 3
3 2
2
Tc=25°C Tc=25°C
Single pulse Single pulse
0.01 0.1
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 10 2 3 5 7 100 2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE -- V IT01914 Collector-to-Emitter Voltage, VCE -- V IT01915
PC -- Ta PC -- Tc
3.5 70

3.0 60
Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

2.5 50

No
2.0 he 40
at
sin
k
1.5 30

1.0 20

0.5 10

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT01916 Case Temperature, Tc -- °C IT01917

No.7086-3/4
2SD1651C
www.DataSheet4U.com

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

PS No.7086-4/4

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