SFH610A/617A
5.3 kV TRIOS Optocoupler
High Reliability
FEATURES Dimensions in Inches (mm)
• Variety of Current Transfer Ratios at IF=10 mA
2 1
– SFH610A/617A-1, 40–80%
pin one ID
– SFH610A/617A-2, 63–125% SFH610A
– SFH610A/617A-3, 100–200% .255 (6.48)
– SFH610A/617A-4, 160–320% .268 (6.81)
Anode 1 4 Emitter
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current Cathode 2 3 Collector
3 4
• Withstand Test Voltage, 5300 VRMS
• High Collector-Emitter Voltage, VCEO=70 V .179 (4.55)
.190 (4.83)
• Low Saturation Voltage .300 (7.62) typ.
.030 (.76) .031 (.79) typ.
• Fast Switching Times .045 (1.14) .050 (1.27) typ.
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield) .130 (3.30)
.150 (3.81) .230 (5.84)
• Temperature Stable .250 (6.35)
10 °
• Low Coupling Capacitance 4° .110 (2.79)
typ. .020 (.508 ) .130 (3.30)
• End-Stackable, .100" (2.54 mm) Spacing .035 (.89) 3°–9°
.018 (.46) .008 (.20)
• High Common-Mode Interference Immunity .022 (.56) .050 (1.27) .012 (.30)
(Unconnected Base) .100 (2.54) SFH617A
• Underwriters Lab File #52744
• V VDE 0884 Available with Option 1
D E
Anode 1 4 Collector
DESCRIPTION Cathode 2 3 Emitter
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter, Maximum Ratings
which is optically coupled to a silicon planar phototransis- Emitter
tor detector, and is incorporated in a plastic DIP-4 Reverse Voltage.........................................................................6.0 V
package. DC Forward Current.................................................................60 mA
The coupling devices are designed for signal transmission Surge Forward Current (tP≤10 µs) .............................................2.5 A
between two electrically separated circuits. Total Power Dissipation.........................................................100 mW
Detector
The couplers are end-stackable with 2.54 mm spacing. Collector-Emitter Voltage ............................................................70 V
Creepage and clearance distances of >8.0 mm are Emitter-Collector Voltage ...........................................................7.0 V
achieved with option 6. This version complies with IEC 950 Collector Current .....................................................................50 mA
(DIN VDE 0805) for reinforced insulation up to an opera- Collector Current (tP≤1.0 ms).................................................100 mA
tion voltage of 400 VRMS or DC. Total Power Dissipation.........................................................150 mW
Specifications subject to change. Package
Isolation Test Voltage between Emitter and Detector,
refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 VRMS
Creepage............................................................................ ≥7.0 mm
Clearance ........................................................................... ≥7.0 mm
Insulation Thickness between Emitter and Detector .......... ≥0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1 ....................................... ≥175
Isolation Resistance
VIO=500 V, TA=25°C......................................................... ≥1012 Ω
VIO=500 V, TA=100°C....................................................... ≥1011 Ω
Storage Temperature Range ......................................–55 to +150°C
Ambient Temperature Range......................................–55 to +100°C
Junction Temperature .............................................................. 100°C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane ≥1.5 mm).................................... 260°C
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–228 March 27, 2000-00
Characteristics (TA=25°C)
Description Symbol Unit Condition
Emitter (IR GaAs)
Forward Voltage VF 1.25 (≤1.65) V IF=60 mA
Reverse Current IR 0.01 (≤10) µA VR=6.0 V
Capacitance C0 13 pF VR=0 V, f=1.0 MHz
Thermal Resistance RthJA 750 K/W
Detector (Si Phototransistor)
Capacitance CCE 5.2 pF VCE=5 V, f=1.0 MHz
Thermal Resistance RthJA 500 K/W
Package
Collector-Emitter Saturation Voltage VCEsat 0.25 (≤0.4) V IF=10 mA, IC=2.5 mA
Coupling Capacitance CC 0.4 pF
Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-Emitter Leakage Current by Dash Number
Description -1 -2 -3 -4
IC/IF (IF=10 mA) 40–80 63–125 100–200 160–320 %
IC/IF (IF=1.0 mA) 30 (>13) 45 (>22) 70 (>34) 90 (>56)
Collector-Emitter Leakage Current, ICEO 2.0 (≤50) 2.0 (≤50) 5.0 (≤100) 5.0 (≤100) nA
VCE=10 V
Figure 1. Switching Times (Typical) IF=10 mA, VCC=5.0 V, TA=25°C
Linear Operation (without saturation)
Load Resistance RL 75 Ω
Turn-on Time tON 3.0 µs
IF RL=75 Ω
VCC=5 V Rise Time tR 2.0
IC
Turn-off Time tOFF 2.3
47 Ω Fall Time tF 2.0
Cut-off Frequency FCO 250 kHz
Figure 2. Switching Operation
(with saturation)
Dash No.
Parameter Sym. Unit
-1 -2 and -3 -4
IF 1.0 k Ω IF=20 mA IF=10 mA IF=5.0 mA
VCC=5.0 V
Turn-on Time tON 3.0 4.2 6.0 µs
Rise Time tR 2.0 3.0 4.6
47 Ω
Turn-off Time tOFF 18 23 25
Fall Time tF 11 14 15
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH610/17A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–229 March 27, 2000-00
Figure 3. Current Transfer Ratio (typ.) Figure 6. Transistor capacitance (typ.) Figure 9. Permissible Diode
vs. Temperature IF=10 mA, VCC=5.0 V vs. collector-emitter voltage TA=25°C, Forward Current vs. Ambient
f=1.0 MHz Temperature
20
pF
15
C
10
5
CCE
0
10-2 10-1 10-0 101 V 102
Ve
Figure 4. Output Characteristics (typ.) Figure 7. Permissible Pulse Handling
Collector Current vs. Collector-emitter Capability. Forward Current vs. Pulse
Voltage TA=25°C Width Pulse cycle D=parameter, TA=25°C
Figure 5. Diode Forward Voltage Figure 8. Permissible Power
(typ.) vs. Forward Current Dissipation vs. Ambient Temperature
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA SFH610/17A
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–230 March 27, 2000-00
