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High Density Mounting Phototransistor Optically Coupled Isolators

The document describes an optically coupled isolator consisting of an infrared light emitting diode and phototransistor in a dual in-line package. It provides electrical specifications and ratings for the input diode, output transistor, and coupled parameters. Applications include computer terminals, industrial systems, and measuring instruments.
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0% found this document useful (0 votes)
34 views3 pages

High Density Mounting Phototransistor Optically Coupled Isolators

The document describes an optically coupled isolator consisting of an infrared light emitting diode and phototransistor in a dual in-line package. It provides electrical specifications and ratings for the input diode, output transistor, and coupled parameters. Applications include computer terminals, industrial systems, and measuring instruments.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TLP621, TLP621-2, TLP621-4

HIGH DENSITY MOUNTING


PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS

APPROVALS TLP621
2.54 Dimensions in mm
l UL recognised, File No. E91231

DESCRIPTION 7.0 1 4
The TLP621, TLP621-2 , TLP621-4 series of 6.0 2 3
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo 1.2
transistors in space efficient dual in line plastic
packages. 5.08 7.62
4.08 4.0
FEATURES 3.0
l Options :- 13°
10mm lead spread - add G after part no. 0.5 Max
Surface mount - add SM after part no. 3.0 0.26
Tape&reel - add SMT&R after part no. 3.35
TLP621-2 0.5
l High Current Transfer Ratio ( 50% min)
l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 2.54
1 8
l High BVCEO ( 55Vmin )
l All electrical parameters 100% tested 2 7
l Custom electrical selections available 7.0 3 6
6.0
APPLICATIONS 4 5
l Computer terminals 1.2
l Industrial systems controllers 10.16 7.62
l Measuring instruments 9.16 4.0
l Signal transmission between systems of 3.0
different potentials and impedances
0.5 13°
Max
3.0
0.26
3.35
0.5
1 16
TLP621-4 2 15
3 14
2.54 4 13
5 12
7.0 6 11
6.0
7 10
OPTION SM OPTION G
SURFACE MOUNT 7.62 1.2 8 9
20.32 7.62
19.32 4.0
3.0
0.6 13°
0.1 1.25 0.26 0.5
0.75 Max
10.46
10.16 0.26
9.86 3.0 0.5 3.35

ISOCOM COMPONENTS LTD


Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581

7/12/00
DB92547m-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C


Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA


Reverse Voltage 5V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BVCEO 55V


Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW

POWER DISSIPATION

Total Power Dissipation 200mW


(derate linearly 2.67mW/°C above 25°C)

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )


PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = 10mA


Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 5V

Output Collector-emitter Breakdown (BVCEO) 55 V IC = 0.5mA


( Note 2 )
Emitter-collector Breakdown (BVECO) 6 V IE = 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 24V

Coupled Current Transfer Ratio (CTR) (Note 2)


TLP621, TLP621-2, TLP621-4 50 600 % 5mA IF , 5V VCE
CTR selection available GB 100 600 %
BL 200 600 %
GB 30 % 1mA IF , 0.4V VCE

Collector-emitter Saturation VoltageVCE (SAT) 0.4 V 8mA IF , 2.4mA IC


GB 0.4 V 1mA IF , 0.2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)
Rise Time tr 2 µs VCC =10V ,
Fall Time tf 3 µs IC = 2mA, RL = 100Ω
Turn-on Time ton 3 µs
Turn-off Time toff 3 µs

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

7/12/00 DB92547m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low
Collector-emitter Voltage
200
TA = 25°C
Collector power dissipation P C (mW)

25

Collector current I C (mA)


150 50
20
40
30
15 20
100
10
10 5
50
5 IF = 2mA

0 0
-30 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Forward Current vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage

60
50 TA = 25°C
50
50 30
Forward current I F (mA)

20
Collector current I C (mA)

40
40
15
30
30 10

20
20

10 10 IF = 5mA

0 0
-30 0 25 50 75 100 125 0 2 4 6 8 10
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )

Collector-emitter Saturation Current Transfer Ratio vs. Forward Current


(V)

Voltage vs. Ambient Temperature


0.28 320
CE(SAT)

0.24 280
Current transfer ratio CTR (%)
Collector-emitter saturation voltage V

IF = 5mA
0.20 IC = 1mA 240

200
0.16
160
0.12
120
0.08
80 VCE = 5V
0.04 TA = 25°C
40
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)

7/12/00
DB92547m-AAS/A1

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