60CPH03 ®

60CPH03 Pb
Pb Free Plating Product
80 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode
TO-3PN/TO-3PB
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS

Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics Anode
Base Backside
· Low Recovery Loss
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current

GENERAL DESCRIPTION
60CPH03 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Values Unit
VR Maximum D.C. Reverse Voltage 400 V
V RRM Maximum Repetitive Reverse Voltage 400 V
T C =110°C, Per Diode 40 A
I F(AV) Average Forward Current
T C =110°C, Per Package 80 A
I F(RMS) RMS Forward Current T C =110°C, Per Diode 56 A
I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 400 A

PD Power Dissipation 156 W

TJ Junction Temperature -40 to +150 °C
T STG Storage Temperature Range -40 to +150 °C
Torque Module-to-Sink Recommended（M3） 1.1 N·m
R θJC Thermal Resistance Junction-to-Case 0.8 °C /W
Weight 6.0 g
ELECTRICAL CHARACTERISTICS T C =25°C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V R =400V -- -- 10 µA
I RM Reverse Leakage Current
V R =400V, T J =125°C -- -- 150 µA

I F =40A -- 1.3 1.8 V

VF Forward Voltage
I F =40A, T J =125°C -- 1.1 V
t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 22 -- ns
t rr Reverse Recovery Time V R =200V, I F =40A -- 52 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 4.5 -- A
t rr Reverse Recovery Time V R =200V, I F =40A -- 71 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 9 -- A

Rev.05 Page 1/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 60CPH03 ®

120 150
VR=200V
TJ =125°C
100
120
IF=80A

80
90

trr (ns)
IF (A)

60
TJ =125°C 60
40
IF=40A
TJ =25°C
30 IF=20A
20

0 0
0 0.6
0.3 0.9 1.2 1.5 0 200 400 600 800 1000
VF（V） diF/dt（A/μs）
Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt

50 600
VR=200V VR=200V
TJ =125°C TJ =125°C
40 500

IF=80A
400
IF=80A
IRRM (A)

30
Qrr (nc)

IF=40A
300
IF=20A
IF=40A
20
IF=20A 200

10
100

0 0
0 200 400 600 800 1000 0 200
400 600 800 1000
diF/dt（A/μs） diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt

1.2 10

1
1
0.8
trr
ZthJC (K/W)

Duty
-1 0.5
0.6 10
Kf

0.2
IRRM 0.1
0.05
0.4 Single Pulse
-2
Qrr 10
0.2

-3
0 10 -4 -3 -2 -1
0 7525 100 125 150
50 10 10 10 10 1
TJ (°C) Rectangular Pulse Duration (seconds)
Fig5. Dynamic Parameters vs Junction Temperature Fig6. Transient Thermal Impedance

Rev.05 Page 2/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 60CPH03 ®

IF trr

0.25 IRRM
Qrr
IRRM

dIF/dt 0.9 IRRM

Fig7. Diode Reverse Recovery Test Circuit and Waveform

Dimensions in Millimeters
Fig8. Package Outline

Rev.05 Page 3/3

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/