600V,7A N-Channel Power MOSFET EC747N60

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Features n
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◆ 650V, 7A, RDS(ON)(Max.) = 1.1Ω @ VGS = 10V e
◆ Low Crss r
◆ Fast Switching t
◆ 100 % Avalanche Tested
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Applications

Adapter
LCD Panel Power
Switching Mode Power Supply
E-Bike Charger

Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)

Limit
Symbol Parameter TO-220 Unit
TO-220F
TO-263
VDS Drain-Source Voltage a 600 V
VGS Gate-Source Voltage  30 V
Drain Current-Continuous, TC =25 ℃ 7 A
ID
Drain Current-Continuous, TC =100 ℃ 4.2 A
IDM Drain Current-Pulsed b 28 A
PD Maximum Power Dissipation @ TJ =25 ℃ 125 40 W
EAS Single Pulsed Avalanche Energy e 196 mJ
c
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
TJ, TSTG Operating and Store Temperature Range -55 to 150 ℃

Thermal Characteristics

Symbol Parameter Value Unit

R JC Thermal Resistance, Junction-Case Max. 1 3.1 ℃/W
R JA Thermal Resistance, Junction-Ambient Max. 63 ℃/W

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 600V,7A N-Channel Power MOSFET EC747N60
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Electrical Characteristics( TJ = 25°C unless otherwise noted) n
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■ Off Characteristics e
Symbol Parameter Test Condition Min. Typ.
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Max. Unit
- - t
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 600 V
0 e
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 20 μ Ar

Forward Gate Body Leakage - - 100 nA

IGSSF VDS = 0V, VGS = 30V
Current

IGSSR Reverse Gate Body Leakage - - -100 nA

VDS = 0V, VGS = -30V
Current

■ On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 2.9 4.0 V
RDS(on) Static Drain-Source On-Resistance d VGS = 10V, ID = 3.5A - 0.92 1.1 Ω
d
gFS Forward Transconductance VDS = 15V, ID = 3.5A - 3.6 10 S

■ Dynamic Characteristics

Ciss Input Capacitance - 1270 - pF

VDS = 25V, VGS = 0V,
Coss Output Capacitance - 160 - pF
f = 1.0MHz
Crss Reverse Transfer Capacitance - 26 - pF

■ Switching Characteristics

td(on) Turn-On Delay Time - 29 - ns

tr Turn-On Rise Time VDD = 300V, ID = 7A - 9 - ns
RG = 10Ω,
td(off) Turn-Off Delay Time VGS = 10V - 50 - ns
tf Turn-Off Fall Time - 13 - ns
Qg Total Gate Charge - 32 nC
VDS = 300V, ID = 7A
Qgs Gate-Source Charge - 9 nC
VGS = 10V
Qgd Gate-Drain Charge - 13 nC

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 600V,7A N-Channel Power MOSFET EC747N60
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■ Drain-Source Diode Characteristics n
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Drain-Source Diode Forward - - 7 Ae
IS VGS = 0V
Continuous Current
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ISM Miximum Pulsed Current VGS = 0V - - 28 A
t
VSD Drain-Source Diode VGS = 0V, IS = 7A - 0.79 1.5 Ve
Forward Voltage
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trr Reverse Recovery time VGS = 0V, IS = 7A, - 325 - ns
Qrr Reverse Recovery Charge di/dt = 100A/µs - 2.5 - µC

Notes :
a. TJ = +25 ℃ to +150 ℃.
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. ISD< 7.0A di/dt < 100 A/µs, VDD < BVDSS, T J < +150 ℃
d. Pulse width < 300 µs; duty cycle < 2%.
e. L=10mH, VDD =50V, ID=6.0A, RG =25Ω Starting TJ =25 ℃..

ORDERING INFORMATION

Part Number Package Marking Marking Information

EC747N60AFR TO-220F-3L
747N60 1. LLLLL：Lot No.
EC747N60AR TO-220-3L LLLLL 2. YY：Year code
YYWW 3. WW：Week code
EC747N60A9R TO-263-3L

Square Pulse Duration (sec) for EC747N60AF

Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration

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TJ, Junction Temperature( C) VDS, Drain-Source Voltage(V) for EC747N60AF

Figure 2. Normalized On-Resistance Variation Figure 3. Maximum SafeOperating Area
with Temperature

Figure 4. Capacitance Characteristics Figure 5. Gate Charge Characteristics

Figure 6. On-State Characteristics Figure 7. Body Diode Forward Voltage Variation

with Source Current

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Figure 8. Gate Threshold Variation Figure 9. Transfer Characteristics

with Temperature

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