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Isc N-Channel MOSFET Transistor IRFP240R: INCHANGE Semiconductor Product Specification

The document provides specifications for an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFP240R. It lists key features, ratings, characteristics, and parameters of the transistor such as a drain current of 20A, drain-source voltage of 200V, and on-resistance of 0.18Ω.

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28 views2 pages

Isc N-Channel MOSFET Transistor IRFP240R: INCHANGE Semiconductor Product Specification

The document provides specifications for an N-channel MOSFET transistor from INCHANGE Semiconductor called the IRFP240R. It lists key features, ratings, characteristics, and parameters of the transistor such as a drain current of 20A, drain-source voltage of 200V, and on-resistance of 0.18Ω.

Uploaded by

Nam Tào
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor IRFP240R

FEATURES
·Drain Current –ID= 20A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max)
·Fast Switching

DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 200 V

VGS Gate-Source Voltage-Continuous ±20 V

ID Drain Current-Continuous 20 A

IDM Drain Current-Single Pluse 80 A

PD Total Dissipation @TC=25℃ 150 W

TJ Max. Operating Junction Temperature -55~150 ℃

Tstg Storage Temperature -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor IRFP240R

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 10A 0.18 Ω

IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 250 μA

VSD Forward On-Voltage IS= 18A; VGS= 0 2 V

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn

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