2N7002W, 2V7002W

Small Signal MOSFET

60 V, 340 mA, Single, N−Channel, SC−70
Features
• ESD Protected
• Low RDS(on)
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• Small Footprint Surface Mount Package
• 2V Prefix for Automotive and Other Applications Requiring Unique
V(BR)DSS RDS(on) MAX ID MAX
Site and Control Change Requirements; AEC−Q101 Qualified and (Note 1)
PPAP Capable
1.6 W @ 10 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 60 V 340 mA
Compliant 2.5 W @ 4.5 V

Applications
• Low Side Load Switch
SIMPLIFIED SCHEMATIC
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc. Gate 1

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) 3 Drain

Rating Symbol Value Unit Source 2

Drain−to−Source Voltage VDSS 60 V
(Top View)
Gate−to−Source Voltage VGS ±20 V
Drain Current (Note 1) ID mA
Steady State TA = 25°C 310 MARKING DIAGRAM
TA = 85°C 220 & PIN ASSIGNMENT
Drain
t<5s TA = 25°C 340 3
TA = 85°C 240

Power Dissipation (Note 1) PD mW

Steady State 280 71 MG
SC−70/SOT−323
t<5s 330 G
CASE 419
Pulsed Drain Current (tp = 10 ms) IDM 1.4 A STYLE 8 1 2
Operating Junction and Storage TJ, TSTG −55 to °C Gate Source
Temperature Range +150
71 = Device Code
Source Current (Body Diode) IS 250 mA
M = Date Code
Lead Temperature for Soldering Purposes TL 260 °C G = Pb−Free Package
(1/8″ from case for 10 s) (Note: Microdot may be in either location)
Gate−Source ESD Rating ESD 2000 V
(HBM, Method 3015)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be Device Package Shipping†
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS 2N7002WT1G SC−70 3000/Tape & Reel
(Pb−Free)
Characteristic Symbol Max Unit
2V7002WT1G SC−70 3000/Tape & Reel
Junction−to−Ambient − Steady State RqJA 450 °C/W (Pb−Free)
(Note 1)
†For information on tape and reel specifications,
Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 375 including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
Brochure, BRD8011/D.
sq [1 oz] including traces)

© Semiconductor Components Industries, LLC, 2015 1 Publication Order Number:

April, 2015 − Rev. 6 2N7002W/D
 2N7002W, 2V7002W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ 71 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0 mA
VDS = 60 V TJ = 150°C 15 mA

VGS = 0 V, TJ = 25°C 100 nA

VDS = 50 V TJ = 150°C 10 mA
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±10 mA
VDS = 0 V, VGS = ±10 V 450 nA
VDS = 0 V, VGS = ±5.0 V 150 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 2.5 V
Negative Threshold Temperature VGS(TH)/TJ 4.0 mV/°C
Coefficient
Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 500 mA 1.19 1.6 W
VGS = 4.5 V, ID = 200 mA 1.33 2.5
Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS
CHARGES AND CAPACITANCES
Input Capacitance CISS 24.5 pF
VGS = 0 V, f = 1 MHz,
Output Capacitance COSS 4.2
VDS = 20 V
Reverse Transfer Capacitance CRSS 2.2
Total Gate Charge QG(TOT) 0.7 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V; 0.1
Gate−to−Source Charge QGS ID = 200 mA 0.3
Gate−to−Drain Charge QGD 0.1
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time td(ON) 12.2 ns
Rise Time tr VGS = 10 V, VDD = 25 V, 9.0
Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25 W 55.8
Fall Time tf 29
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.8 1.2 V
IS = 200 mA TJ = 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures

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 2N7002W, 2V7002W

TYPICAL CHARACTERISTICS

1.6 1.2
VGS = 10 V 5.0 V
4.5 V
9.0 V
ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

8.0 V 4.0 V
1.2
7.0 V
6.0 V 0.8
3.5 V
0.8
TJ = 25°C
3.0 V 0.4
0.4
2.5 V
TJ = 125°C TJ = −55°C
0 0
0 2 4 6 0 2 4 6
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

3.2 3.2
VGS = 4.5 V VGS = 10 V
2.8 2.8
TJ = 125°C
2.4 TJ = 85°C 2.4 TJ = 125°C

2.0 TJ = 25°C 2.0 TJ = 85°C

1.6 1.6 TJ = 25°C

TJ = −55°C
1.2 1.2
TJ = −55°C
0.8 0.8

0.4 0.4
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2
ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and
Temperature Temperature
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

2.4 2.2
ID = 0.2 A
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE

2.0 ID = 500 mA
1.8
VGS = 4.5 V
1.6
VGS = 10 V
1.4
ID = 200 mA
1.2

1.0
0.8

0.4 0.6
2 4 6 8 10 −50 −25 0 25 50 75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with
Voltage Temperature

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 2N7002W, 2V7002W

TYPICAL CHARACTERISTICS

30 5

VGS, GATE−TO−SOURCE VOLTAGE (V)

Ciss
TJ = 25°C
4 ID = 0.2 A
C, CAPACITANCE (pF)

20
3
TJ = 25°C
VGS = 0 V
Coss 2
10

Crss
0 0
0 4 8 12 16 20 0 0.2 0.4 0.6 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge

10 1.0E−6
VGS = 0 V
VGS = 0 V
TJ = 150°C
IS, SOURCE CURRENT (A)

1.0E−7
IDSS, LEAKAGE (A)

1
TJ = 125°C

TJ = 85°C TJ = 25°C 1.0E−8

0.1 TJ = 85°C
1.0E−9

TJ = 25°C
0.01 1.0E−10
0.4 0.6 0.8 1.0 1.2 5 10 15 20 25 30 35 40 45 50 55 60
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current Figure 10. Drain−to−Source Leakage Current
vs. Voltage

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

SC−70 (SOT−323)
CASE 419−04
ISSUE N
DATE 11 NOV 2008
SCALE 4:1
D NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.

MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095

c
A A2
GENERIC
0.05 (0.002) L MARKING DIAGRAM
A1

SOLDERING FOOTPRINT* XX MG
G
0.65
0.65 0.025 1
0.025 XX = Specific Device Code
M = Date Code
G = Pb−Free Package

1.9 *This information is generic. Please refer to

0.075 device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
0.9 may or may not be present.
0.035

0.7
0.028
SCALE 10:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:

CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE
2. N.C. 2. EMITTER 2. CATHODE 2. ANODE
3. CATHODE 3. COLLECTOR 3. ANODE 3. CATHODE

STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:

PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE
2. BASE 2. EMITTER 2. SOURCE 2. CATHODE 2. ANODE 2. CATHODE
3. COLLECTOR 3. COLLECTOR 3. DRAIN 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE

Electronic versions are uncontrolled except when accessed directly from the Document Repository.
DOCUMENT NUMBER: 98ASB42819B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1

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