DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906
PNP switching transistor
Product data sheet 2003 Mar 18
Supersedes data of 2000 Apr 11
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
FEATURES QUICK REFERENCE DATA
• Collector current capability IC = −200 mA SYMBOL PARAMETER MAX. UNIT
• Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V
IC collector current (DC) −200 mA
APPLICATIONS
• General switching and amplification. PINNING
PIN DESCRIPTION
DESCRIPTION 1 base
PNP switching transistor in a SOT23 plastic package. 2 emitter
NPN complement: MMBT3904. 3 collector
MARKING
handbook, halfpage
TYPE NUMBER MARKING CODE(1) 3
3
MMBT3906 7B∗
Note 1
1. ∗ = p: Made in Hong Kong.
2
∗ = t: Made in Malaysia. 1 2
∗ = W: Made in China. Top view MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − −40 V
VCEO collector-emitter voltage open base − −40 V
VEBO emitter-base voltage open collector − −6 V
IC collector current (DC) − −200 mA
ICM peak collector current − −200 mA
IBM peak base current − −100 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW
Tstg storage temperature −65 +150 °C
Tj junction temperature − 150 °C
Tamb operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18 2
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = −30 V − −50 nA
IEBO emitter cut-off current IC = 0; VEB = −6 V − −50 nA
hFE DC current gain VCE = −1 V; see Fig.2
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA 60 −
IC = −100 mA 30 −
VCEsat collector-emitter saturation IC = −10 mA; IB = −1 mA − −250 mV
voltage IC = −50 mA; IB = −5 mA − −400 mV
VBEsat base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA − −950 mV
Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF
Ce emitter capacitance IC = ic = 0; VEB = −500 mV; − 10 pF
f = 1 MHz
fT transition frequency IC = −10 mA; VCE = −20 V; 250 − MHz
f = 100 MHz
F noise figure IC = −100 µA; VCE = −5 V; − 4 dB
RS = 1 kΩ; f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels); see Fig.7
td delay time ICon = −10 mA; IBon = −1 mA; − 35 ns
tr rise time IBoff = 1 mA − 35 ns
ts storage time − 225 ns
tf fall time − 75 ns
2003 Mar 18 3
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
MHC459 MHC460
600 −250
handbook, halfpage handbook, halfpage
IC
hFE (mA) (3) (2) (1)
−200
(1) (4)
400 (5)
−150
(6)
(7)
(2) −100 (8)
200
(9)
(3)
−50
(10)
0 0
−10−1 −1 −10 −102 −103 0 −2 −4 −6 −8 −10
IC (mA) VCE (V)
Tamb = 25 °C.
(1) IB = −1.5 mA. (5) IB = −0.9 mA. (9) IB = −0.3 mA.
VCE = −1 V. (2) IB = −1.35 mA. (6) IB = −0.75 mA. (10) IB = −0.15 mA.
(1) Tamb = 150 °C. (3) IB = −1.2 mA. (7) IB = −0.6 mA.
(2) Tamb = 25 °C. (4) IB = −1.05 mA. (8) IB = −0.45 mA.
(3) Tamb = −55 °C.
Fig.3 Collector current as a function of
Fig.2 DC current gain; typical values. collector-emitter voltage.
MHC461 MHC462
−1200 −1200
handbook, halfpage handbook, halfpage
VBE VBEsat
(mV) (mV)
−1000 −1000
(1)
(1)
−800 −800 (2)
(2)
−600 −600 (3)
(3)
−400 −400
−200 −200
−10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103
IC (mA) IC (mA)
VCE = −1 V. IC/IB = 10.
(1) Tamb = −55 °C. (1) Tamb = −55 °C.
(2) Tamb = 25 °C. (2) Tamb = 25 °C.
(3) Tamb = 150 °C. (3) Tamb = 150 °C.
Fig.4 Base-emitter voltage as a function of Fig.5 Base-emitter saturation voltage as a
collector current. function of collector current.
2003 Mar 18 4
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
MHC463
−103
handbook, halfpage
VCEsat
(mV)
(1)
−102 (2)
(3)
−10
−10−1 −1 −10 −102 −103
IC (mA)
IC/IB = 10.
(1) Tamb = 25 °C.
(2) Tamb = 150 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current.
handbook, full pagewidth VBB VCC
RB RC
(probe) Vo (probe)
oscilloscope oscilloscope
450 Ω 450 Ω
R2
Vi DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.7 Test circuit for switching times.
2003 Mar 18 5
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D B E A X
HE v M A
A1
1 2 c
e1 bp w M B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-02-28
SOT23 TO-236AB 99-09-13
2003 Mar 18 6
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
General ⎯ Information in this document is believed to be
above those given in the Characteristics sections of this
accurate and reliable. However, NXP Semiconductors
document is not implied. Exposure to limiting values for
does not give any representations or warranties,
extended periods may affect device reliability.
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Applications ⎯ Applications that are described herein for Quick reference data ⎯ The Quick reference data is an
any of these products are for illustrative purposes only. extract of the product data given in the Limiting values and
NXP Semiconductors makes no representation or Characteristics sections of this document, and as such is
warranty that such applications will be suitable for the not complete, exhaustive or legally binding.
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2003 Mar 18 7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Mar 18 Document order number: 9397 750 10243
