ECE1007 Optoelectronics L T P J C
3 0 0 0 3
Pre-requisite PHY1001 – Engineering Physics Syllabus Version
1.1
Course Objectives:
1. To introduce the fundamentals of the basic physics behind optoelectronic devices.
2. To impart the applied aspects of optoelectronic device physics and its usage in the design and
operation of laser diodes, light-emitting diodes, photodetectors and light modulators.
3. To provide applications of optoelectronic systems in telecommunication engineering
Course Outcomes:
1. Understand the band structures of various types of semiconductors and choice of materials for
optical process in semiconductors.
2. Understand the basic concepts of optical absorption and recombination process in
semiconductors.
3. Understand the various types of optical sources, characteristics and their applications.
4. Apply, analyze and design circuits using optoelectronic components for various applications
and analyze their performance.
5. Understand the various types of optical detectors and modulators, characteristics and their
applications.
6. Exploit the way to improve the use of optoelectronic components in engineering, modern
application systems and their longevity.
Student Learning Outcomes (SLO): 1,2,5
1. Having an ability to apply mathematics and science in engineering applications
2. Having a clear understanding of the subject related concepts and of contemporary issues
5. Having design thinking capability.
Module:1 Elemental and Compound semiconductors 4 hours
Band structure, Direct band gap and indirect semiconductors, Transmission media and choice of
materials
Module:2 Absorption in semiconductors 7 hours
Indirect intrinsic transitions, Donor-Acceptor and Impurity band absorption, Impurity band
absorption, Intraband transition and free carrier absorption, Franz –Keldysh effect and quantum
confined stark effect
Module:3 Recombination in semiconductors 7 hours
Relation between absorption and emission spectra, Stokes shift in optical transitions, Band to band
recombination, Donor acceptor and impurity band transitions, Deep level transitions, Auger
recombination
Module:4 Light emitting diodes (LED) Sources 7 hours
Double heterojunction LED, Surface emitter LED, Edge emitter LED, Superluminescent LED,
LED power and efficiency, LED characteristics-output power, output spectrum, modulation
bandwidth, reliability.
Module:5 LASER Sources 8 hours
Absorption and emission of radiation, Einstein relations, Population inversion, Optical feedback
and oscillation, Threshold condition for laser oscillation, Broad area DH injection laser, Stripe
geometry DH injection laser, Single mode operation, Distributed feedback laser, Distributed
Braggs reflector laser, VCSEL, Temperature effects.
Module:6 Optical Detectors 7 hours
PN, PIN, Avalanche and Heterojunction photodiodes, Photo transistors, Avalanche
multiplication process in APDs, Quantum efficiency, Responsivity.
Module:7 Optoelectronic Modulators 3 hours
Basic principle, Birefringence, Optical Activity, Electro –Optic modulators, Acousto-Optic
modulators, Magneto-Optic modulators.
Module:8 Contemporary Issues 2 hours
Total Lecture hours: 45 hours
Text Book(s)
1. Pallab Bhattacharya, “Semiconductor Optoelectronic Devices”, 2017, 2nd Edition, Pearson
Education, India.
2. John M Senior, “Optical Fiber Communication – principle and practices”, 2014, 3rd
Edition, PHI, India.
Reference Books
1. A K Ghatak and K Thyagarajan, “Optical Electronics”, 2017, 1st Edition, Cambridge
University Press, India,
2. Safa O. Kasap, “Optoelectronics and Photonics-Principles and Practices”, 2012, 2nd Edition,
Pearson Prentice Hall, India.
Mode of assessment: Internal Assessment (CAT, Quizzes, Digital Assignments) & Final
Assessment Test (FAT)
Recommended by Board of Studies 28-02-2016
Approved by Academic Council No. 47 Date 05-10-2017
