2N6804

Qualified Levels:
Available on
P-CHANNEL MOSFET JAN, JANTX, and
commercial Qualified per MIL-PRF-19500/562 JANTXV
versions

DESCRIPTION
This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability
applications. Microsemi also offers numerous other transistor products to meet higher and
lower power ratings with various switching speed requirements in both through-hole and
surface-mount packages.

Important: For the latest information, visit our website http://www.microsemi.com. TO-204AA (TO-3)
FEATURES Package
• JEDEC registered 2N6804 number series.
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/562.
(See part nomenclature for all available options.)
• RoHS compliant version available (commercial grade only).

APPLICATIONS / BENEFITS
• Low-profile metal can design.
• Military and other high-reliability applications.

MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated

Parameters / Test Conditions Symbol Value Unit

Operating & Storage Junction Temperature Range T J & T stg -55 to +150 °C
o
Thermal Resistance Junction-to-Case R ӨJC 1.67 C/W
Total Power Dissipation @ T A = +25 °C 4
(1) PT W
@ T C = +25 °C 75
Drain-Source Voltage, dc V DS -100 V
Gate-Source Voltage, dc V GS ± 20 V
(2)
Drain Current, dc @ T C = +25 ºC I D1 -11.0 A
(2)
Drain Current, dc @ T C = +100 ºC I D2 -7.0 A
Off-State Current (Peak Total Value)
(3)
I DM -50 Ω MSC – Lawrence
6 Lake Street,
Source Current IS -11 A Lawrence, MA 01841
Tel: 1-800-446-1158 or
NOTES: 1. Derated linearly by 0.6 W/ºC for T C > +25 ºC.
2. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal (978) 620-2600
wires and may be limited by pin diameter: Fax: (978) 689-0803

MSC – Ireland
Gort Road Business Park,
3. I DM = 4 x I D1 as calculated in note 2. Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298

Website:
www.microsemi.com

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MECHANICAL and PACKAGING

• CASE: TO-3 metal can.
• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available.
• MARKING: Manufacturer’s ID, part number, date code, ESD symbol.
• WEIGHT: Approximately 12.7 grams.
• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N6804 (e3)

Reliability Level RoHS Compliance

JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
Blank = Commercial

JEDEC type number

(see Electrical Characteristics
table)

SYMBOLS & DEFINITIONS

Symbol Definition
di/dt Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF Forward current
RG Gate drive impedance
V DD Drain supply voltage
V DS Drain source voltage, dc
V GS Gate source voltage, dc

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ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V (BR)DSS -100 V
V GS = 0 V, I D = -1.0 mA
Gate-Source Voltage (Threshold)
V DS ≥ V GS , I D = -0.25 mA V GS(th)1 -2.0 -4.0 V
V DS ≥ V GS , I D = -0.25 mA, T J = +125 °C V GS(th)2 -1.0
V DS ≥ V GS , I D = -0.25 mA, T J = -55 °C V GS(th)3 -5.0
Gate Current
V GS = ± 20 V, V DS = 0 V I GSS1 ±100 nA
V GS = ± 20 V, V DS = 0 V, T J = +125 °C I GSS2 ±200
Drain Current
V GS = 0 V, V DS = -80 V I DSS1 -25 µA
Drain Current
V GS = 0 V, V DS = -80 V, T J = +125 °C I DSS2 0.25 mA
Static Drain-Source On-State Resistance
V GS = -10 V, I D = -7 A pulsed r DS(on)1 0.30 Ω
Static Drain-Source On-State Resistance
V GS = -10 V, I D = -11 A pulsed r DS(on)2 0.36 Ω
Static Drain-Source On-State Resistance
T J = +125°C
r DS(on)3 Ω
V GS = -10 V, I D = -7 A pulsed 0.55
Diode Forward Voltage
V GS = 0 V, I S = -11.0 A pulsed V SD -4.7 V

DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
Q g(on) 29.0 nC
V GS = -10 V, I D = -11 A, V DS = -50 V
Gate to Source Charge nC
Q gs 7.1
V GS = -10 V, I D = -11 A, V DS = -50 V
Gate to Drain Charge nC
Q gd 21.0
V GS = -10 V, I D = -11 A, V DS = -50 V

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ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued)

SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-on delay time
I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(on) 60 ns
Rinse time
I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V tr 140 ns
Turn-off delay time
I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(off) 140 ns
Fall time
I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V tf 140 ns

Diode Reverse Recovery Time

di/dt ≤ 100 A/µs, V DD ≤ -50 V, I F = -11 A t rr 250 ns

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Thermal Response (ZӨJC) GRAPHS

t 1 , Rectangle Pulse Duration (seconds)

FIGURE 1
Transient Thermal impedance
ID DRAIN CURRENT (AMPERES)

T C , CASE TEMPERATURE (°C)

FIGURE 2
Maximum Drain Current vs Case Temperature

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GRAPHS (continued)

ID DRAIN CURRENT (AMPERES)

V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3
Safe Operating Area

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PACKAGE DIMENSIONS

NOTE:
INCHES MILLIMETERS
1. Dimensions are in inches. DIM
MIN MAX MIN MAX
NOTES
2. Millimeters are given for general information only. A - .875 - 22.23
3. These dimensions should be measured at points .050 B .060 .135 1.52 3.43
inch (1.27 mm) and .055 inch (1.40 mm) below C .250 .360 6.35 9.15 3
seating plane. When gauge is not used measurement D .312 .500 7.92 12.70
will be made at the seating plane. D2 - .050 - 1.27
4. The seating plane of the header shall be flat within E .038 .043 0.97 1.10 DIA.
.001 inch (0.03 mm) concave to .004 inch (0.10 mm) F .131 .188 3.33 4.78 Radius
convex inside a .930 inch (23.62 mm) diameter circle G 1.177 1.197 29.90 30.40
on the center of the header and flat within .001 inch H .655 .675 16.64 17.15
(0.03 mm) concave to .006 inch (0.15 mm) convex J .205 .225 5.21 5.72 3
overall. K .420 .440 10.67 11.18 3
5. Mounting holes shall be deburred on the seating L .495 .525 12.57 13.34 Radius
plane side. M .151 .161 3.84 4.09 DIA.
6. Drain is electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

SCHEMATIC

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