Bulletin I27132 rev.

D 09/97

IRK.71, .91 SERIES

THYRISTOR/ DIODE and NEW ADD-A-pakTM Power Modules
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate 75 A
3500 VRMS isolating voltage
Standard JEDEC package
95 A
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved

Description
These IRK series of NEW ADD-A-paks use power
diodes and thyristors in a variety of circuit configu-
rations. The semiconductor chips are electrically
isolated from the base plate, allowing common
heatsinks and compact assemblies to be built.
They can be interconnected to form single phase or
three phase bridges or AC controllers. These
modules are intended for general purpose high
voltage applications such as high voltage regulated
power supplies, lighting circuits, and temperature
and motor speed control circuits.

Major Ratings and Characteristics

Parameters IRK.71 IRK.91 Units
IT(AV) or IF(AV)
75 95 A
@ 85°C

IO(RMS) (*) 165 210 A

ITSM @ 50Hz 1665 1785 A

IFSM @ 60Hz 1740 1870 A
2
I t @ 50Hz 13.86 15.91 KA 2s

@ 60Hz 12.56 14.52 KA 2s

2
I √t 138.6 159.1 KA 2√s
VRRM range 400 to 1600 V
o
TSTG - 40 to 125 C
o
TJ - 40 to125 C
(*) As AC switch.

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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Type number Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600

On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
IT(AV) Max. average on-state
current (Thyristors) 180o conduction, half sine wave,
75 95
IF(AV) Max. average forward TC = 85o C
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current. 165 210 or
As AC switch I(RMS) I(RMS)
A
ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage
Sinusoidal
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
half wave,
IFSM or forward current 1400 1500 t=10ms 100% VRRM
Initial TJ = TJ max.
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ = 25 C, o

1940 2100 t=8.3ms no voltage reapplied

I2 t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
Initial TJ = TJ max.
9.80 11.25 2
t=10ms 100% VRRM
KA s
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ = 25o C,
15.60 18.30 t= 8.3ms no voltage reapplied
I2√t Max. I 2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.82 0.80 Low level (3)
V TJ = TJ max
voltage (2) 0.85 0.85 High level (4)
rt Max. value of on-state 3.00 2.40 Low level(3)
mΩ TJ = TJ max
slope resistance (2) 2.90 2.25 High level (4)
VTM Max. peak on-state or ITM = π x IT(AV)
1.59 1.58 V TJ = 25°C
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate T J = 25o C, from 0.67 VDRM ,
of rise of turned on 150 A/µs ITM =π x IT(AV), I = 500mA,
g
current t < 0.5 µs, t > 6 µs
r p
IH Max. holding current 200 T J = 25oC, anode supply = 6V,
mA resistive load, gate open circuit
IL Max. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

(1) I t for time tx = I √t x √tx

2 2
(2) Average power = VT(TO) x IT(AV) + r t x (IT(RMS)) 2
(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV

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 IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

Triggering
Parameters IRK.71 IRK.91 Units Conditions
PGM Max. peak gate power 12 12
W
PG(AV) Max. average gate power 3.0 3.0
IGM Max. peak gate current 3.0 3.0 A
-VGM Max. peak negative
gate voltage 10

VGT Max. gate voltage 4.0 T J = - 40°C

V Anode supply = 6V
required to trigger 2.5 T J = 25°C
resistive load
1.7 T J = 125°C
IGT Max. gate current 270 T J = - 40°C
Anode supply = 6V
required to trigger 150 mA T J = 25°C
resistive load
80 T J = 125°C
o
VGD Max. gate voltage T J = 125 C,
0.25 V
that will not trigger rated VDRM applied
IGD Max. gate current T J = 125oC,
6 mA
that will not trigger rated VDRM applied

Blocking
Parameters IRK.71 IRK.91 Units Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current 15 mA T J = 125 oC, gate open circuit
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
VINS RMS isolation voltage V
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
500 V/µs
of off-state voltage (5) gate open circuit
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16 S90.

Thermal and Mechanical Specifications

Parameters IRK.71 IRK.91 Units Conditions
TJ Junction operating
- 40 to 125
temperature range °C
T Storage temp. range - 40 to 125
stg
RthJC Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
K/W
RthCS Typical thermal resistance Mounting surface flat, smooth and greased.
0.1
case to heatsink Flatness < 0.03 mm; roughness < 0.02 mm
T Mounting torque ± 10% A mounting compound is recommended
5 and the torque should be rechecked after
to heatsink
Nm a period of 3 hours to allow for the
busbar 3 spread of the compound
wt Approximate weight 83 (3) g (oz)

Case style TO-240AA JEDEC

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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Sine half wave conduction Rect. wave conduction

Devices Units
180o 120o 90o 60o 30o 180o 120o 90 o 60o 30o

IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
°C/W
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12

Outlines Table
IRKT../.. (*) IRKH../.. (*)
18 REF. 15.5 ± 0.5 18 REF. 15.5 ± 0.5
Screws M5 x 0.8 Screws M5 x 0.8
(0.71) (0.61 ± 0.02) (0.71) (0.61 ± 0.02) Faston tab. 2.8 x 0.8
Faston tab. 2.8 x 0.8
(0.11 x 0.03) (0.11 x 0.03)
(1.18 ± 0.04)
(1.18 ± 0.02)

(1.18 ± 0.04)
(1.18 ± 0.02)
(1.13 ± 0.02)

(1.13 ± 0.02)
30 ± 0.1
(0.94 ± 0.02)

30 ± 0.5

30 ± 0.1
(0.94 ± 0.02)
30 ± 0.5

29 ± 0.5
29 ± 0.5

24 ± 0.5
24 ± 0.5

(0.24 ± 0.01)
(0.24 ± 0.01)
6.1 ± 0.3

6.1 ± 0.3
6.3 ± 0.3 6.3 ± 0.3
(0.25 ± 0.01) (0.25 ± 0.01)
(0.23 ± 0.01)

Pitch 4.0 ± 0.2

Pitch 4.0 ± 0.2

5.8 ± 0.25

(0.16 ± 0.01)

(0.16 ± 0.01)
(0.81 ± 0.03)

(0.81 ± 0.03)
20.5 ± 0.75

20.5 ± 0.75
2

3
7 6
4 5

4 5
1

20 ± 0.5 20 ± 0.5
(0.79 ± 0.02) (0.79 ± 0.02)
20 ± 0.5 20 ± 0.5
(0.79 ± 0.02) (0.79 ± 0.02)
15 ± 0.5 15 ± 0.5
(0.59 ± 0.02) 80 ± 0.3 (0.59 ± 0.02) 80 ± 0.3
(3.15 ± 0.01) (3.15 ± 0.01)
92 ± 0.5 92 ± 0.5
(3.62 ± 0.02) (3.62 ± 0.02)

IRKL../.. (*)
Screws M5 x 0.8 18 REF. 15.5 ± 0.5
(0.71) (0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(1.18 ± 0.04)
(1.18 ± 0.02)

(1.13 ± 0.02)

30 ± 0.1
(0.94 ± 0.02)
30 ± 0.5

29 ± 0.5

24 ± 0.5
(0.24 ± 0.01)
6.1 ± 0.3

6.3 ± 0.3
(0.25 ± 0.01)
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
(0.81 ± 0.03)
20.5 ± 0.75

7 6
1

20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
(0.59 ± 0.02) 80 ± 0.3
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)

All dimensions in millimeters (inches)

(*) For terminals connections, see Circuit configurations Table

NOTE: To order the Optional Hardware see Bulletin I27900

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 IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

Circuit Configurations Table

IRKT IRKH IRKL
(1) (1) (1)
~ ~ ~

+ + +
(2) (2) (2)

- - -
(3) (3) (3)
G1 K1 K2 G2 G1 K1 K2 G2
(4) (5) (7) (6) (4) (5) (7) (6)

Ordering Information Table

Device Code

IRK T 91 / 16 S90 IRK.92 types

With no auxiliary cathode
6
1 2 3 4 5
13.8 (0.53)
4

1 - Module type
2 - Circuit configuration (See Circuit Configuration table)
3 - Current code * * * * Available with no auxiliary cathode.
4 - Voltage code (See Voltage Ratings table) To specify change: 71 to 72

5 - dv/dt code: S90 = dv/dt 1000 V/µs 91 to 92

e.g. : IRKT92/16 etc.
No letter = dv/dt 500 Vµs
Maximum Allowable Case Temperature (°C)

130
Maximum Allowable Case Temperature (°C)

130
IRK.71.. Series IRK.71.. Series
R thJC (DC) = 0.33 K/W R thJC (DC) = 0.33 K/W
120 120

110 110
Conduction Period
Conduction Angle
100 100

90 90
30° 30°
60° 60°
90°
80 120° 80 90°
180° 120°
180° DC
70 70
0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

Maximum Average On-state Power Loss (W)

Maximum Average On-state Power Loss (W)

120 140
180° DC
120° 120 180°
100 90° 120°
60° 90°
100 60°
80 30°
30°
80
RMS Limit
60 RMS Limit
60
Conduction Period
40 Conduction Angle
40
IRK.71.. Series
IRK.71.. Series
20 Per Junction Per Junction
20
T J = 125°C
T J = 125°C
0 0
0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120
Average On-state Current (A) Average On-state Current (A)

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
1600 1800
Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
1500 Rated VRRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial T J= 125°C 1600 Of Conduction May Not Be Maintained .
1400 Initial T J = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s No Voltage Reap plied
1300 1400
Rated V RRMReapplied
1200
1200
1100

1000 1000

900
800
800 IRK.71.. Series IRK.71.. Series
Per Junction Per Junction
700 600
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

250
Maximum Total On-state Power Loss (W)

180°
R th
0.
2

120°
K/

SA
0.

W
3

200 90°
=
K/

0.
0. 1
W

60° 4
K/
K/

W
30° 0.
W

5
K/
-D

150 W
elt

0. 7
a

K/
R

W
1K
100 /W
Conduction Angle
1 .5
K/ W
IRK.71.. Series
50 3 K/W
Per Module
T J = 125°C

0
0 20 40 60 0
80 100 120 140 160 180 20 40 60 80 100 120 140
Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 7 - On-state Power Loss Characteristics

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 IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

600

180°

Rt
Maximum Total Power Loss (W)

500

h
(Sine)

SA
=
180°

0.
1
(Rect)

K/
400

W
0. 2

-D
K/

el
W

ta
0.

R
300 3K
/W

0.5
200 K/ W

2 x IRK.71.. Series
1 K/W
Single Phase Bridge
100
Connected 2 K /W
T J = 125°C
0
0 20 40 60 80 100 120 140 160 180
0 20 40 60 80 100 120 140
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 8 - On-state Power Loss Characteristics

800

700
Maximum Total Power Loss (W)

R
600
th
SA

=
0.
1
500 K/
120° 0 .2
W
-D
(Rect) K/
W el
400 ta
R
0.3
K/ W
300
0.5
3 x IRK.71.. Series K /W
200
Three Phase Bridge 1 K/W
100 Connected
T J = 125°C
0
0 40 80 120 160 200 240
0 20 40 60 80 100 120 140

Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 9 - On-state Power Loss Characteristics
Maximum Allowable Case Temperature (°C)

Maximum Allowable Case Temperature (°C)

130 130
IRK.91.. Series IRK.91.. Series
R thJC (DC) = 0.27 K/W R thJC (DC) = 0.27 K/W
120 120

110 110
Conduction Angle Conduction Period
100 100

90 90 30°
30°
60° 90° 60°
80 120° 80 90°
180°
120° DC
180°
70 70
0 20 40 60 80 100 0 20 40 60 80 100 120 140 160

Average On-state Current (A) Average On-state Current (A)

Fig. 10 - Current Ratings Characteristics Fig. 11 - Current Ratings Characteristics

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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97
Maximum Average On-state Power Loss (W)

Maximum Average On-state Power Loss (W)

140 180
180° DC
120° 160 180°
120
90° 120°
60° 140 90°
100 30°
120 60°
30°
80 RMS Limit 100
RMS Limit
60 80
Conduction Period
Cond uction Angle 60
40
IRK.91.. Series 40 IRK.91.. Series
Per Junction Per Jun ction
20
T J = 125°C 20 T J = 125°C

0 0
0 20 40 60 80 100 0 20 40 60 80 100 120 140 160
Average On-state Current (A) Average On-state Current (A)

Fig. 12 - On-state Power Loss Characteristics Fig. 13 - On-state Power Loss Characteristics

1600 1800
Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
1500 Rated V RRM Applied Following Surge. Versus Pulse Train Duration. Control
Initial TJ = 125°C 1600 Of Conduction May Not Be Ma intained.
1400 Initial T J= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s No Voltage Reapplied
1300 1400 Rated VRRM Reapplied
1200
1200
1100

1000 1000

900
800
800 IRK.91.. Series IRK.91.. Series
Per Junction Per Junction
700 600
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cyc le Current Pulses (N) Pulse Train Duration (s)

Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current

350
Maximum Total On-state Power Loss (W)

R th

300 180°
0.
SA

120° 2
K/
=

W
0. 1

250 90°
0.
K/

60° 3
K/
W

30° W
-D

200
el
ta

0 .5
R

K/
W
150 Conductio n Angle 0 .7
K/
W
1 K/
100 W
1.5 K
IRK.91.. Series /W
50 Per Module 3 K/W
T J = 125°C
0
0 40 80 120 160 200 0
240 20 40 60 80 100 120 140
Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 16 - On-state Power Loss Characteristics

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 IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

600
180°

R th
Maximum Total Power Loss (W)

500 (Sine)

SA
180°

=
0.
(Rect)

1
K/
0.
400

W
2 K/

-D
W

elt
a
0.3

R
300 K/
W

0 .5
200 K/ W

2 x IRK.91.. Series
1 K/W
Single Phase Bridge
100
Connected 2 K/ W
T J = 125°C
0
0 40 80 120 160 0
200 20 40 60 80 100 120 140
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)

Fig. 17 - On-state Power Loss Characteristics

900

800
Maximum Total Power Loss (W)

R
700
th
SA

=
0.
600 1
K/
120° W
-D
500 (Rect) el
0. 2 ta
K/ R
W
400
0 .3
K/
W
300
3 x IRK.91.. Series 0.5
K/ W
200 Three Phase Bridge
Connected 1 K/W
100 T J = 125°C
0
0 40 80 120 160 200 240 0
280 20 40 60 80 100 120 140
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics

1000 1000
Instantaneous On-state Current (A)

Instantaneous On-state Current (A)

100 100

T J= 25°C
T J= 25°C
10 T J= 125°C 10 T J = 125°C

IRK.71.. Series IRK.91.. Series

Per Junction Per Junction
1 1
0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5
Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V)

Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics

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IRK.71, .91 Series
Bulletin I27132 rev. D 09/97

Maximum Reverse Recovery Current - Irr (A)

Maximum Reverse Recovery Charge - Qrr (µC)

700 140
IRK.71.. Series I TM = 200 A
IRK.71.. Series I TM = 200 A
IRK.91.. Series
600 IRK.91.. Series 120
T J = 125 °C 100 A
T J = 125 °C
100 A
500 100 50 A

50 A
400 80 20 A

20 A 10 A
300 60

10 A
200 40

100 20
10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 21 - Recovery Charge Characteristics Fig. 22 - Recovery Current Characteristics

1
Transient Thermal Impedance Z thJC (K/W)

Steady State Value:

R thJC = 0.33 K/W
R thJC = 0.27 K/W
(DC Operation)

0.1 IRK.71.. Series

IRK.91.. Series

Per Junction

0.01
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 23 - Thermal Impedance ZthJC Characteristics

100
Rectangular gate pulse (1) PGM = 200 W, tp = 300 µs
a)Recommended load line for
(2) PGM = 60 W, tp = 1 ms
Instantaneous Gate Voltage (V)

rated di/dt: 20 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs (3) PGM = 30 W, tp = 2 ms
b)Recommended load line for (4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
10 tr = 1 µs, tp >= 6 µs
(a)
(b)
TJ = -40 °C
TJ = 25 °C
TJ = 125 °C

1
(4) (3) (2) (1)

VGD
IGD
IRK.71../.91.. Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100 1000
Instantaneous Gate Current (A)

Fig. 24 - Gate Characteristics

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