Preliminary Data Sheet No.
PD60146-L
IR2117/IR2118 (S)
SINGLE CHANNEL DRIVER
Features Product Summary
• Floating channel designed for bootstrap operation
Fully operational to +600V VOFFSET 600V max.
Tolerant to negative transient voltage
dV/dt immune IO+/- 200 mA / 420 mA
• Gate drive supply range from 10 to 20V
• Undervoltage lockout VOUT 10 - 20V
• CMOS Schmitt-triggered inputs with pull-down
• Output in phase with input (IR2117) or out of ton/off (typ.) 125 & 105 ns
phase with input (IR2118)
Description Packages
The IR2117/IR2118(S) is a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS outputs. The out-
put driver features a high pulse current buffer stage
designed for minimum cross-conduction. The float-
ing channel can be used to drive an N-channel power 8-Lead PDIP 8-Lead SOIC
MOSFET or IGBT in the high or low side configura- IR2117/IR2118 IR2117S/IR2118S
tion which operates up to 600 volts.
Typical Connection
up to 600V
V CC VCC VB
IN IN HO
TO
COM VS LOAD
IR2117
up to 600V
V CC VCC VB
IN IN HO
TO
COM VS LOAD
IR2118
(Refer to Lead Assignments for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for
proper circuit board layout.
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This datasheet has been downloaded from http://www.digchip.com at this page
IR2117/IR2118 (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Additional information is shown in Figures 5 through 8.
Symbol Definition Min. Max. Units
VB High side floating supply voltage -0.3 625
VS High side floating supply offset voltage VB - 25 VB + 0.3
VHO High side floating output voltage VS - 0.3 VB + 0.3 V
VCC Logic supply voltage -0.3 25
VIN Logic input voltage -0.3 VCC + 0.3
dVs/dt Allowable offset supply voltage transient (figure 2) — 50 V/ns
PD Package power dissipation @ TA ≤ +25°C (8 lead PDIP) — 1.0
W
(8 lead SOIC) — 0.625
RthJA Thermal resistance, junction to ambient (8 lead PDIP) — 125
°C/W
(8 lead SOIC) — 200
TJ Junction temperature — 150
TS Storage temperature -55 150 °C
TL Lead temperature (soldering, 10 seconds) — 300
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
VB High side floating supply absolute voltage VS + 10 VS + 20
VS High side floating supply offset voltage Note 1 600
VHO High side floating output voltage VS VB V
VCC Logic supply voltage 10 20
VIN Logic input voltage 0 VCC
TA Ambient temperature -40 125 °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip
DT97-3 for more details).
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IR2117/IR2118 (S)
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25°C unless otherwise specified. The dynamic electrical characteristics
are measured using the test circuit shown in Figure 3.
Symbol Definition Min. Typ. Max. Units Test Conditions
ton Turn-on propagation delay — 125 200 VS = 0V
toff Turn-off propagation delay — 105 180 VS = 600V
ns
tr Turn-on rise time — 80 130
tf Turn-off fall time — 40 65
Static Electrical Characteristics
VBIAS (VCC, VBS) = 15V and TA = 25°C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to
COM. The VO and IO parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
VIH input voltage - logic “1” (IR2117) logic “0” (IR2118) 9.5 — —
V
VIL Input voltage - logic “0” (IR2117) logic “1” (IR2118) — — 6.0
VOH High level output voltage, VBIAS - VO — — 100 IO = 0A
mV
VOL Low level output voltage, VO — — 100 IO = 0A
ILK Offset supply leakage current — — 50 VB = VS = 600V
IQBS Quiescent VBS supply current — 50 240 VIN = 0V or VCC
IQCC Quiescent VCC Supply Current — 70 340 VIN = 0V or VCC
IIN+ Logic “1” input bias current (IR2117) µA VIN = VCC
— 20 40
(IR2118) VIN = 0V
I IN- Logic “0” input bias current (IR2117) VIN = 0V
— — 1.0
(IR2118) VIN = VCC
VBSUV+ VBS supply undervoltage positive going threshold 7.6 8.6 9.6
VBSUV- VBS supply undervoltage negative going threshold 7.2 8.2 9.2
V
VCCUV+ VCC supply undervoltage positive going threshold 7.6 8.6 9.6
VCCUV- VCC supply undervoltage negative going threshold 7.2 8.2 9.2
IO+ Output high short circuit pulsed current 200 250 — VO = 0V
VIN = Logic “1”
PW ≤ 10 µs
mA
I O- Output low short circuit pulsed current 420 500 — VO = 15V
VIN = Logic “0”
PW ≤ 10 µs
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IR2117/IR2118 (S)
Functional Block Diagram (IR2117)
VCC VB
UV
DETECT
R Q
HV
LEVEL PULSE R HO
SHIFT
FILTER S
IN
PULSE VS
GEN
UV
DETECT
COM
Functional Block Diagram (IR2118)
VCC VB
UV R
DETECT
Q
HV
LEVEL PULSE R HO
SHIFT
FILTER S
IN
PULSE VS
GEN
UV
DETECT
COM
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IR2117/IR2118 (S)
Lead Definitions
Symbol Description
VCC Logic and gate drive supply
IN Logic input for gate driver output (HO), in phase with HO (IR2117)
IN Logic input for gate driver output (HO), out of phase with HO (IR2118)
COM Logic ground
VB High side floating supply
HO High side gate drive output
VS High side floating supply return
Lead Assignments
1 VCC VB 8 1 VCC VB 8
2 IN HO 7 2 IN HO 7
3 COM VS 6 3 COM VS 6
4 5 4 5
8 Lead PDIP 8 Lead SOIC
IR2117 IR2117S
1 VCC VB 8 1 VCC VB 8
2 IN HO 7 2 IN HO 7
3 COM VS 6 3 COM VS 6
4 5 4 5
8 Lead PDIP 8 Lead SOIC
IR2118 IR2118S
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IR2117/IR2118 (S)
Case outlines
01-6014
8-Lead PDIP 01-3003 01 (MS-001AB)
INCHES MILLIMETERS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
FOOTPRINT
A1 .0040 .0098 0.10 0.25
8X 0.72 [.028] b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 D .189 .1968 4.80 5.00
H
E E .1497 .1574 3.80 4.00
0.25 [.010] A
1 2 3 4 e .050 BASIC 1.27 BASIC
6.46 [.255]
e 1 .025 BASIC 0.635 BASIC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
L .016 .050 0.40 1.27
6X e
3X 1.27 [.050] y 0° 8° 0° 8°
8X 1.78 [.070]
e1 K x 45°
A
C y
0.10 [.004]
8X L 8X c
8X b A1
7
0.25 [.010] C A B
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
NOTES: 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
2. CONTROLLING DIMENSION: MILLIMETER 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
A SUBSTRATE. 01-6027
8-Lead SOIC 01-0021 11 (MS-012AA)
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IR2117/IR2118 (S)
IN
(IR2118)
IN <50 V/ns
(IR2117) IR2117/IR2118
HO
Figure 1. Input/Output Timing Diagram Figure 2. Floating Supply Voltage Transient Test Circuit
IN
(IR2118)
50% 50%
50% 50%
IN
(IR2117)
ton tr toff tf
IR2117/IR2118
90% 90%
HO 10% 10%
Figure 3. Switching Time Test Circuit Figure 4. Switching Time Waveform Definition
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IR2117/IR2118 (S)
320V 320V 140V
150 150
140V
125 125
Junction Temperature (°C)
Junction Temperature (°C)
100 100
10V
75 75
10V
50 50
25 25
0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz) Frequency (Hz)
Figure 5. IR2117/IR2118 TJ vs. Frequency (IRFBC20) Figure 6. IR2117/IR2118 TJ vs. Frequency (IRFBC30)
RGATE = 33Ω, VCC = 15V RGATE = 22Ω, VCC = 15V
320V 140V 10V 320V 140V
150 150
10V
125 125
Junction Temperature (°C)
Junction Temperature (°C)
100 100
75 75
50 50
25 25
0 0
1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6
Frequency (Hz) Frequency (Hz)
Figure 7. IR2117/IR2118 TJ vs. Frequency (IRFBC40) Figure 8. IR2117/IR2118 TJ vs. Frequency (IRFPE50)
RGATE = 15Ω, VCC = 15V RGATE = 10Ω, VCC = 15V
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 322 3331
Data and specifications subject to change without notice. 1/24/2002
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