VLSI Design: Professor: S.Ramasamy/ECE B64, R307 Rams@aastu - Edu.et
VLSI Design: Professor: S.Ramasamy/ECE B64, R307 Rams@aastu - Edu.et
Professor: S.Ramasamy/ECE
B64, R307
rams@aastu.edu.et
Basic Principles of VLSI
Design
The First Computer
The Babbage
Difference Engine
(1832)
25,000 parts
cost: £17,470
ENIAC - The first electronic computer
(1946)
The Transistor Revolution
First transistor
Bell Labs, 1948
The First Integrated Circuits
Bipolar logic
1960’s
1971
1000 transistors
1 MHz operation
Intel Pentium (IV) microprocessor
Moore’s Law
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1959
Moore’s Law
1960
1961
1962
100000
Million transistors
10000
1000
100
10
General-Performance VLSI
1 Billion
K Transistors
1,000,000
100,000
Pentium® III
10,000 Pentium® II
Pentium® Pro
1,000 Pentium®
i486
100 i386
80286
10 8086
Source: Intel
1
1975 1980 1985 1990 1995 2000 2005 2010
Projected
Courtesy, Intel
Moore’s law in Microprocessors
1000
Transistors (MT)
10
P6
Pentium® proc
1 486
386
0.1 286
Transistors8085 8086
on Lead Microprocessors double every 2 years
0.01 8080
8008
4004
0.001
1970 1980 1990 2000 2010
Year
Courtesy, Intel
Die Size Growth
100
Die size (mm)
P6 ® proc
Pentium
10 486
386
8080 286
8086 ~7% growth per year
8085
8008 ~2X growth in 10 years
4004
1
1970 1980 1990 2000 2010
Year
Die size grows by 14% to satisfy Moore’s Law
Courtesy, Intel
Frequency
10000
Doubles every
Frequency (MHz)
1000
2 years
100 P6
Pentium ® proc
486
10 8085 386
8086 286
1 8080
8008
0.1 4004
1970 1980 1990 2000 2010
Year
Lead Microprocessors frequency doubles every 2 years
Courtesy, Intel
Power Dissipation
100
Power (Watts)
P6
Pentium ® proc
10
486
8086 286
386
8085
1 8080
8008
4004
0.1
1971 1974 1978 1985 1992 2000
Year
Lead Microprocessors power continues to increase
Courtesy, Intel
Power will be a major problem
100000
18KW
5KW
Power (Watts)
10000
1.5KW
1000 500W
Pentium® proc
100
286 486
10 8086 386
8085
8080
8008
1 4004
0.1
1971 1974 1978 1985 1992 2000 2004 2008
Year
Power delivery and dissipation will be prohibitive
Courtesy, Intel
Power Density
10000
Power Density (W/cm2)
Rocket
Nozzle
1000
Nuclear
100
Reactor
8086
10 4004 Hot Plate P6
8008 8085 386 Pentium® proc
8080 286 486
1
1970 1980 1990 2000 2010
Year
Power density too high to keep junctions at low temp
Courtesy, Intel
Not only Microprocessors
Cell
Phone
Small Power
Signal RF RF
Digital Cellular Market
(Phones Shipped)
Power
Management
1996 1997 1998 1999 2000
Units 48M 86M 162M 260M 435M Analog
Baseband
DSM 1/DSM
“Microscopic Problems” “Macroscopic Issues”
• Ultra-high speed design • Time-to-Market
• Interconnect • Millions of Gates
• Noise, Crosstalk • High-Level Abstractions
• Reliability, Manufacturability • Reuse & IP: Portability
• Power Dissipation • Predictability
• Clock distribution. • etc.
?
Development Trends of Electronic
Devices
element base
Requirements to
• Reduction in power consumption
2. Maintenance issues
• Expansion of maintenance conditions
2. Integration of elements
• Reduction of physical size parameters
• Reliability increase
1. Necessity of Solutions
multifunctional circuits
1. Application of IP blocks
Trend Example
Integration Level Components/chip, Moore’s Law
Cost Cost per function
Speed Microprocessor throughput
Power Laptop or cell phone battery life
Compactness Small and light-weight products
Functionality Nonvolatile memory, imager
VLSI Development Trends (3)
16 nm
10
1
1995 2000 2005 2010 2015 2020 2025
Year of Production
High-performance VLSI Half Pitch and Gate Length Trends
100000
Million transistors
10000
1000
100
10
General-Performance VLSI
10,000
10,000,000 100,000
100,000,000
1,000
1,000,000 Logic Tr./Chip 10,000
10,000,000
Productivity
10
10,000 58%/Yr. compounded 100
100,000
Complexity growth rate
1,0001 10
10,000
x x
0.1
100 1
1,000
xx
xx
x 21%/Yr. compound
x Productivity growth rate
0.01
10 0.1
100
0.001
1 0.01
10
1981
1983
1985
1987
1989
1991
1993
1995
1997
1999
2001
2003
2005
2007
2009
Source: Sematech
SYSTEM
MODULE
+
GATE
CIRCUIT
DEVICE
G
S D
n+ n+
Design Metrics
Recurrent costs
silicon processing, packaging, test
proportional to volume
proportional to chip area
Die Cost
Single die
Wafer
cost:
¢-per-transistor
1
0.1 Fabrication capital cost per transistor (Moore’s law)
0.01
0.001
0.0001
0.00001
0.000001
0.0000001
1982 1985 1988 1991 1994 1997 2000 2003 2006 2009 2012
Yield
a
defects per unit area die area
die yield 1
a
a is approximately 3
die cost f (die area)4
Some Examples (1994)
Design IC
Specification Fabrication
Process Design
VLSI Design Problems (1)
a)
A C A
B D I E F I M N
J
C G H K L O
c) d) e)
A stylized view of a design (a), its decomposition tree (b), a view of the design decomposition of
entity A at abstraction levels 1 and 2 (c), A view of the design decomposition of entity C at levels 2
and 3 (d), The whole design without a hierarchical organization (e).
VLSI Design Problems (3)
Transistor-level Design
Physical domain
Design Domains (2)
Only top-down design methodology
Behavioral Structural
domain domain
High-level Synthesis
(Algorithmic and System Design)
Logic synthesis
(Structural and Logic Design)
Top-down
Transistor layout
Module layout
Cell layout
Floorplans
Physical partitions
Physical domain
VLSI Design Abstraction Levels (1)
System
Add
Accumulator Register-Transfer
Input
Command Register
+1
Command Counter
& &
1
Gate
J TT
C
K
Circuit
Device
n+
p
n +
n
+
p
VLSI Design Abstraction Levels (2)
Mathematical
N Level Modeling Object Example of Modeling Object
Apparatus
Theory of
1 System Structural Circuit RAM bus CPU Massive
Operation
add
Accumulator
1
& &
Circuit at the gate
Logic
and flip flop-level J TT
C
K
VLSI Design Abstraction Levels (3)
Example of Modeling Object Mathematical
N Level Modeling Object
Level Apparatus
System of
3 Circuit Electrical Circuit differential
equations
n+ System of
differential
4 Component IC Components p+ equations
n involving partial
n+ arbitrary functions
p
Problems Solved During IC Design
Transition into Less Detailed Circuit Design
Structural
Optimization Structural Synthesis
Parametrical
Parametrical Synthesis
Optimization
Simulation
no
Are conditions of
operating capabilities
met?
yes
Transition into More Detailed Circuit Design
Simplified VLSI Design Flow
Previous Level
Circuit Design
Simulation
yes
Meet the Spec?
no
Layout Design
Parasitic Extraction
LVS Checking
Simulation
yes
Any mistakes?
no
no Meet the Spec?
DRC Checking yes
Synthesis Verification
Design Process: Synthesis
Logic Level
Technology Mapping
Geometrical Level
Physical Design
p-view
Design Process: Verification
Circuit Description
Simulation
Results
Program
Simulation Task
(deck)
Design: Circuit Simulation
Results
Circuit
Stimuli Simulator
Pre-Processing Post-Processing
Optimization
Area (extensive)
Performance (intensive)
Power
Delay
Cycle-time
…
Design implementation
Gate-Level FU-Level
Schematic HDL
Synthesis Synthesis
Design verification
Logic Timing
DRC LVS ERC
Verification Verification
Time
Analog EDA Tools
Analog circuit design is difficult to automate
Wide range of functionalities
Implicit goals and constraints
Different checks and objectives
Analog circuits are mostly custom designed
Design implementation
SPICE Schematic
simulation
Multi-Variable
Design verification Optimization
DRC LVS
Time
Design Options
Design Options
Custom Semicustom
Cell-based Array-based
Cell library
В С Е С B
A B
D Е D D
A
C D E
С A А
Feed though
cell
Standard-Cell-Based VLSI
Pad Metal1 Via Metal2
A cell-based VLSI
Standard cells
Possible megacells,
Fixed blocks
megafunctions, full-custom
blocks, system-level macros
(SLMs), fixed blocks, cores or
functional standard blocks
(FSBs)
All the mask layers of VLSI
are customized transistors
and interconnects
Standard-cell area
Module generators
Synthesized layout
Variable area and aspect- SRAM
ratio
Examples SRAM
RAMs, ROMs, PLAs,
general logic blocks
Features
Layout can be highly
optimized
Standard cells
Structured-custom design
Source of photo: CSE/EE 462: VLSI Design Fall 2006
Design Options. Sea-of-Gates and
Gate Array Design (1)
Complete fabrication process
Predefined library of base
functions
Modular similar to TTL families
Features
Chip size limits complexity
Long turn around time
Cheap at high quantities
Standardized cell height
Unsuitable for regular
structures
More flexible and compact than
gate array
Design Options. Sea-of-Gates and
Gate Array Design (2)
Prefabricated wafers
I/O stages predefined
Regular array of transistors and
interconnection channels
Interconnection defines
functionality
Features
Size: 100 - 1M gates
Short turn around time
Cheap at medium quantities
Unsuitable for regular structures
like RAM, PLA, ALU
Design Approaches
Custom Cell-based Pre-diffused Pre-wired
n+ (p+)
Si
Transmitter p- (n-)
Si
=
Metal1,2- 0,07± 0,06 Ohm/ R1
h L R2
n+diff- 10 ±2 Ohm/
w
n+diff- 10 ±2 Ohm/
Poli Si- 10 ±2 Ohm/
n board-1150±250 Ohm/
Interconnect Velocity (1)
I ΔR ΔL ΔR ΔL O
Ui ΔC ΔC Uo
I x R O
UI UO
∂ ² U/ ∂x ² - R0C0(∂U/ ∂t) = 0
Interconnect Velocity (2)
U2 L1>L2>L3
1
2 U2=U20=const
U20 3
= 0≈const
U21 U2=U21<U20
1>2>3
L= C=RC
3 1 0 t
R R1 R2 Rn
C
C1 C2 Cn
Uo/Ui
1
2
3 1-ring line
0,5
2-real line
3-RC center line
Also
(Uo/Ui)1≈(Uo/Ui)2
0
1 2
t/ Ri= (1/hiwi)
Ci=i(W/H)+K2(h/d)]
Interconnect Velocity (4)
metal1
metal2
h
SiO2 H
Si
d W
1. Full custom design Connection between design time and chip area
2. Library design Chip area lnS
6
3. Gate array 5
4. Programmable gate 4
3
array 2
5. ROM 1
lnt
6. Standard IC Design Design time
Comparison of Design Methods (2)
Comparison according to integration degree
C
c
d
b
Relative value
a
V
Production size
Consumption
(t1a-t1s) - time of 1st company’s 1
advertisement, adaptation
C
2 6 Profit
C (cost price)
price
1 5 7 3
C0(cost price) 8 4
Production
Customer-Developer Relationship (2)
Market Influence
Market