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MOSFET Switching Analysis

This experiment analyzed the switching characteristics of a MOSFET and diode in a power-pole. Key findings include: 1) The MOSFET turn-on time was 1.8 ns and rise time was 191 ns, which matches the datasheet specifications. 2) The MOSFET threshold voltage was around 2.016V as expected based on the datasheet range of 2-4V. 3) Switching losses of the MOSFET were measured to be around 1.8 mW.

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Bryant Baldivicio
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648 views3 pages

MOSFET Switching Analysis

This experiment analyzed the switching characteristics of a MOSFET and diode in a power-pole. Key findings include: 1) The MOSFET turn-on time was 1.8 ns and rise time was 191 ns, which matches the datasheet specifications. 2) The MOSFET threshold voltage was around 2.016V as expected based on the datasheet range of 2-4V. 3) Switching losses of the MOSFET were measured to be around 1.8 mW.

Uploaded by

Bryant Baldivicio
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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Interpretation of Results

Experiment number 2 is about the switching characteristics of MOSFET and

Diode in a Power-pole. This experiment deals with MOSFET and the analysis of its

behavior when it is turned on and off. Also, this experiment also tackles the

characteristics of power-pole which is composed of transistors and diode.

The turn on characteristic of the MOSFET is when the Ton of the PWM, wherein

the MOSFET conducts current since the gate voltage requirement has been met. In the

turned on switching characteristic, the following parameters were measure: t d(on) = 1.8

ns; tri = 191 ns. 3. The VGS (th) threshold is around 2.016V for the simulation, the

datasheet says a VGS (Io) threshold is about 2-4V, hence it is in the expected value.

The current for it is about 0 A, wherein the data sheet states it is about 250uA which is

really small. Also, it was observed that the switching losses is about 1.8 mW. 5. Once

the VG (th) has been lowered that 4V, the MOSFET is gradually turning off hence the

current will be cutoff once the VGS (th) is being lowered.

In switching the MOSFET, the pulsating Vin is the trigger. Based from the result

of the simulation, it took some time for the current to increase, while initially the

voltage is high and gradually drop. As the voltage drop, the current has gone to

saturation. After saturation, the voltage gradually increases and the current is still

saturated.

For the other simulation, it can be observed that the voltage waveform is almost

the same as the initial graph. However, there is a longer time for the voltage to drop
compared to the first graph. For the current, there is a sudden spike present on the

turning on phase. As the voltage drop, the current suddenly increases sharply until it

reached the highest value and then gradually decreases then become stable. After

some time, voltage gradually increases until it reaches a maximum and then suddenly

decrease then becomes zero.


Conclusion

After conducting the experiment, we were able to conclude the following:

• A MOSFET can operate in the saturation region or in the cut-off region to

function as a switch.

• Applying a maximum amount of gate voltage turns on the MOSFET.

• The current and voltage supplied to the transistor contributes to its proper

operation.

• The ability to turn the power MOSFET “ON” and “OFF” allows the device to be

used as a very efficient switch with switching speeds much faster than standard bipolar

junction transistors.

• A power MOSFET is a specific type of metal oxide semiconductor field-effect

transistor (MOSFET) designed to handle significant power levels.

• The main advantages of Power MOSFET are high switching speed and good

efficiency at low voltages than the regular MOSFET.

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