RM80N30LD
N-Channel Enhancement Mode Power MOSFET
Description
The RM80N30LD uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features Schematic diagram
ƽ VDS =30V,ID =80A
RDS(ON) <6.5mΩ @ VGS=10V
RDS(ON) < 10mΩ @ VGS=5V
ƽ High density cell design for ultra low Rdson
ƽ Fully characterized avalanche voltage and current
ƽ Good stability and uniformity with high EAS
ƽ Excellent package for good heat dissipation
Application
Marking and pin assignment
ƽ Power switching application
ƽ Hard switched and high frequency circuits
ƽ Uninterruptible power supply
D
100% UIS TESTED!
G S
TO-252-2L top view
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
80N30 RM80N30LD TO-252-2L - - -
Absolute Maximum Ratings (TC=25ćunless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID 80 A
Drain Current-Continuous(TC=100ć) ID (100ć) 50 A
Pulsed Drain Current IDM 170 A
Maximum Power Dissipation PD 83 W
Derating factor 0.56 W/ć
(Note 5)
Single pulse avalanche energy EAS 306 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ć
2016-10
REV:O15
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2) RJC 1.8 ć/W
Electrical Characteristics (TC=25ćunless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250A 30 - - V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA
(Note 3)
On Characteristics
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 1.6 3 V
VGS=10V, ID=30A - 5.5 6.5
Drain-Source On-State Resistance RDS(ON) m
VGS=5V, ID=24A - 7.5 10
Forward Transconductance gFS VDS=5V,ID=24A 20 - - S
(Note4)
Dynamic Characteristics
Input Capacitance Clss - 2330 - PF
VDS=15V,VGS=0V,
Output Capacitance Coss - 460 - PF
F=1.0MHz
Reverse Transfer Capacitance Crss - 230 - PF
(Note 4)
Switching Characteristics
Turn-on Delay Time td(on) - 20 - nS
Turn-on Rise Time tr VDD=10V,ID=30A - 15 - nS
Turn-Off Delay Time td(off) VGS=10V,RGEN=2.7 - 60 - nS
Turn-Off Fall Time tf - 10 - nS
Total Gate Charge Qg - 51 - nC
VDS=10V,ID=30A,
Gate-Source Charge Qgs - 14 - nC
VGS=10V
Gate-Drain Charge Qgd - 11 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=24A - - 1.2 V
(Note 2)
Diode Forward Current IS - - 80 A
Reverse Recovery Time trr TJ = 25°C, IF = 80A - 32 50 nS
(Note3)
Reverse Recovery Charge Qrr di/dt = 100A/s - 12 20 nC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition˖Tj=25ć,VDD=15V,VG=10V,L=0.5mH,Rg=25ˈIAS=35A
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Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
˖
3) Switch Time Test Circuit˖
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RATING AND CHARACTERISTICS CURVES (RM80N30LD)
Normalized On-Resistance
ID- Drain Current (A)
Vds Drain-Source Voltage (V) TJ-Junction Temperature(ć)
Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vgs Gate-Source Voltage (V) Qg Gate Charge (nC)
Figure 2 Transfer Characteristics Figure 5 Gate Charge
Rdson On-Resistance Normalized
Is- Reverse Drain Current (A)
ID- Drain Current (A) Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward
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RATING AND CHARACTERISTICS CURVES (RM80N30LD)
C Capacitance (pF)
Normalized BVdss
Vds Drain-Source Voltage (V) TJ-Junction Temperature(ć)
Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
Vds Drain-Source Voltage (V) TJ-Junction Temperature(ć)
Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature
Transient Thermal Impedance
r(t),Normalized Effective
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-252 Package Information
Dimensions In Millimeters Dimensions In Inches
Symbol
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 TYP. 0.190 TYP.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 TYP. 0.114 TYP.
L2 1.400 1.700 0.055 0.067
L3 1.600 TYP. 0.063 TYP.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
e e e e
h 0.000 0.300 0.000 0.012
V 5.350 TYP. 0.211 TYP.
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DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet-
ers which may be included on RECTRON data sheets and/ or specifications ca-
n and do vary in different applications and actual performance may vary over ti-
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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