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Isc N-Channel MOSFET Transistor 2SK1916: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 2SK1916. Key specifications include a drain current of 18A at 25°C, a drain-source voltage of 450V minimum, and applications in switching regulators, UPS systems, and power amplifiers. Maximum ratings include a drain-source breakdown voltage of 450V and continuous drain current of 18A at a junction temperature of 150°C.

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82 views2 pages

Isc N-Channel MOSFET Transistor 2SK1916: INCHANGE Semiconductor Product Specification

The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 2SK1916. Key specifications include a drain current of 18A at 25°C, a drain-source voltage of 450V minimum, and applications in switching regulators, UPS systems, and power amplifiers. Maximum ratings include a drain-source breakdown voltage of 450V and continuous drain current of 18A at a junction temperature of 150°C.

Uploaded by

AguilaSolitaria
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© © All Rights Reserved
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INCHANGE Semiconductor isc Product Specification

isc N-Channel MOSFET Transistor 2SK1916

DESCRIPTION
·Drain Current –ID=18A@ TC=25℃
·Drain Source Voltage-
: VDSS=450V(Min)
·Fast Switching Speed

APPLICATIONS
·Switching regulator
·UPS
·General purpose power amplifier

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL ARAMETER VALUE UNIT

VDSS Drain-Source Voltage (VGS=0) 450 V

VGS Gate-Source Voltage ±30 V

ID Drain Current-continuous@ TC=25℃ 18 A

Ptot Total Dissipation@TC=25℃ 80 W

Tj Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

·THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W

Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark

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INCHANGE Semiconductor isc Product Specification

isc N-Channel Mosfet Transistor 2SK1916

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=1mA 450 V

VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 5 V

VDF Body to drain diode forward voltage IF = 4 A, VGS = 0 0.92 1.41 V

RDS(on) Drain-Source On-Resistance VGS= 10V; ID=8A 0.3 0.45 Ω

IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA

IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 500 µA

Ciss Input capacitance 1800 2700

Crss Reverse transfer capacitance VDS=25V;VGS=0V;fT=1MHz 120 185 pF

Coss Output capacitance 270 410

tr Rise time 100 150

VGS=10V;ID=18A;
ton Turn-on time 70 110
VDD=300V;
ns
tf Fall time RL=25Ω 80 120

toff Turn-off time 250 380

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

PDF pdfFactory Pro www.fineprint.cn

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