MMBT3904L, SMMBT3904L

General Purpose Transistor

NPN Silicon

Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR
Site and Control Change Requirements; AEC−Q101 Qualified and 3
PPAP Capable
1
MAXIMUM RATINGS BASE

Rating Symbol Value Unit

2
Collector −Emitter Voltage VCEO 40 Vdc EMITTER
Collector −Base Voltage VCBO 60 Vdc
Emitter −Base Voltage VEBO 6.0 Vdc
3
Collector Current − Continuous IC 200 mAdc SOT−23 (TO−236)
Collector Current − Peak (Note 3) ICM 900 mAdc CASE 318
1 STYLE 6
THERMAL CHARACTERISTICS 2
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board PD
(Note 1) @TA = 25°C 225 mW
MARKING DIAGRAM
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W 1AM M G
G
Total Device Dissipation Alumina PD
Substrate, (Note 2) 1
@TA = 25°C 300 mW
Derate above 25°C 2.4 mW/°C 1AM = Specific Device Code
Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W M = Date Code*
G = Pb−Free Package
Junction and Storage Temperature TJ, Tstg −55 to +150 °C (Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum *Date Code orientation and/or overbar may
Ratings are stress ratings only. Functional operation above the Recommended vary depending upon manufacturing location.
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve. ORDERING INFORMATION

Device Package Shipping†

MMBT3904LT1G SOT−23 3000 / Tape &
SMMBT3904LT1G (Pb−Free) Reel
MMBT3904LT3G SOT−23 10,000 / Tape &
SMMBT3904LT3G (Pb−Free) Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

November, 2012 − Rev. 12 MMBT3904LT1/D
 MMBT3904L, SMMBT3904L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 − Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 60 − Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL − 50 nAdc
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX − 50 nAdc
ON CHARACTERISTICS (Note 4)
DC Current Gain HFE −
(IC = 0.1 mAdc, VCE = 1.0 Vdc) 40 −
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 70 −
(IC = 10 mAdc, VCE = 1.0 Vdc) 100 300
(IC = 50 mAdc, VCE = 1.0 Vdc) 60 −
(IC = 100 mAdc, VCE = 1.0 Vdc) 30 −

Collector −Emitter Saturation Voltage VCE(sat) Vdc

(IC = 10 mAdc, IB = 1.0 mAdc) − 0.2
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.3
Base −Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1.0 mAdc) 0.65 0.85
(IC = 50 mAdc, IB = 5.0 mAdc) − 0.95
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 300 − MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0 10 kW
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5 8.0 X 10− 4
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100 400 −
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0 40 mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) NF − 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 Vdc, VBE = − 0.5 Vdc, td − 35
ns
Rise Time IC = 10 mAdc, IB1 = 1.0 mAdc) tr − 35
Storage Time (VCC = 3.0 Vdc, ts − 200
ns
Fall Time IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) tf − 50
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

+3 V +3 V
DUTY CYCLE = 2% 10 < t1 < 500 ms t1
300 ns +10.9 V
+10.9 V DUTY CYCLE = 2%
275 275

10 k 10 k
0
-0.5 V
< 1 ns CS < 4 pF* 1N916 CS < 4 pF*

-9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time Figure 2. Storage and Fall Time
Equivalent Test Circuit Equivalent Test Circuit

http://onsemi.com
2
 MMBT3904L, SMMBT3904L

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125°C

10 5000
VCC = 40 V
3000
7.0 IC/IB = 10
2000
CAPACITANCE (pF)

5.0

Q, CHARGE (pC)
1000
700
Cibo
3.0 500

300 QT
2.0 Cobo 200
QA
100
70
1.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance Figure 4. Charge Data

500 500
IC/IB = 10 VCC = 40 V
300 300
IC/IB = 10
200 200

100 100
t r, RISE TIME (ns)

70 tr @ VCC = 3.0 V 70
TIME (ns)

50 50

30 30
40 V
20 20
15 V
10 10
7 td @ VOB = 0 V 2.0 V 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Turn −On Time Figure 6. Rise Time

500 500
t′s = ts - 1/8 tf VCC = 40 V
300 IB1 = IB2 300
IC/IB = 20 IC/IB = 10 IB1 = IB2
200 200
IC/IB = 20
t s′ , STORAGE TIME (ns)

t f , FALL TIME (ns)

100 100
70 70
50 IC/IB = 20 50
IC/IB = 10 IC/IB = 10
30 30
20 20

10 10
7 7
5 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time Figure 8. Fall Time

http://onsemi.com
3
 MMBT3904L, SMMBT3904L

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

12 14
SOURCE RESISTANCE = 200 W f = 1.0 kHz IC = 1.0 mA
IC = 1.0 mA 12
10
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10 IC = 0.5 mA
8 SOURCE RESISTANCE = 200 W
IC = 0.5 mA IC = 50 mA
8
6 SOURCE RESISTANCE = 1.0 k IC = 100 mA
IC = 50 mA 6
4
4

2 SOURCE RESISTANCE = 500 W 2

IC = 100 mA
0 0
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)

Figure 9. Figure 10.

h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300 100
hoe, OUTPUT ADMITTANCE (m mhos)

50

200
h fe , CURRENT GAIN

20

10
100

70 5

50
2

30 1
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain Figure 12. Output Admittance

20 10
h re , VOLTAGE FEEDBACK RATIO (X 10 -4 )

7.0
h ie , INPUT IMPEDANCE (k OHMS)

10
5.0
5.0
3.0

2.0 2.0

1.0
1.0
0.5
0.7

0.2 0.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance Figure 14. Voltage Feedback Ratio

http://onsemi.com
4
 MMBT3904L, SMMBT3904L

TYPICAL STATIC CHARACTERISTICS

1000
TJ = +150°C VCE = 1.0 V
h FE, DC CURRENT GAIN

+25°C
100
-55°C

10

1
0.1 1.0 10 100 1000
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8
IC = 1.0 mA 10 mA 30 mA 100 mA

0.6

0.4

0.2

0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

http://onsemi.com
5
 MMBT3904L, SMMBT3904L

0.8 1.4
IC/IB = 10
VCE(sat), COLLECTOR−EMITTER
0.7 IC/IB = 10
1.2
SATURATION VOLTAGE (V)

SATURATION VOLTAGE (V)

150°C

VBE(sat), BASE−EMITTER
0.6
25°C 1.0
0.5
−55°C −55°C
0.4 0.8
25°C
0.3
0.6
0.2
150°C
0.4
0.1
0 0.2
0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 17. Collector Emitter Saturation Voltage Figure 18. Base Emitter Saturation Voltage vs.
vs. Collector Current Collector Current

1.4 1.0
VBE(on), BASE−EMITTER VOLTAGE (V)

1.2 VCE = 1 V 0.5 +25°C TO +125°C

qVC FOR VCE(sat)
1.0 COEFFICIENT (mV/ °C) 0 -55°C TO +25°C
−55°C
0.8 -0.5
25°C -55°C TO +25°C
0.6 -1.0
+25°C TO +125°C
0.4 150°C -1.5 qVB FOR VBE(sat)

0.2 -2.0
0.0001 0.001 0.01 0.1 1 0 20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA)

Figure 19. Base Emitter Voltage vs. Collector Figure 20. Temperature Coefficients
Current

1000 1
1 ms
1s
fT, CURRENT−GAIN−BANDWIDTH

VCE = 1 V 10 ms
TA = 25°C 100 ms

Thermal Limit
PRODUCT (MHz)

0.1
IC (A)

100

0.01

Single Pulse Test

@ TA = 25°C
10 0.001
0.1 1 10 100 1000 0.01 0.1 1 10 100
IC, COLLECTOR CURRENT (mA) VCE (Vdc)
Figure 21. Current Gain Bandwidth vs. Figure 22. Safe Operating Area
Collector Current

http://onsemi.com
6
 MMBT3904L, SMMBT3904L

PACKAGE DIMENSIONS

SOT−23 (TO−236)
CASE 318−08
ISSUE AP

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D 2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
SEE VIEW C THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
3 THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E HE MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.89 1.00 1.11 0.035 0.040 0.044
c A1 0.01 0.06 0.10 0.001 0.002 0.004
1 2
b 0.37 0.44 0.50 0.015 0.018 0.020
b c 0.09 0.13 0.18 0.003 0.005 0.007
e 0.25 D 2.80 2.90 3.04 0.110 0.114 0.120
E 1.20 1.30 1.40 0.047 0.051 0.055
q e 1.78 1.90 2.04 0.070 0.075 0.081
L 0.10 0.20 0.30 0.004 0.008 0.012
L1 0.35 0.54 0.69 0.014 0.021 0.029
A HE 2.10 2.40 2.64 0.083 0.094 0.104
q 0° −−− 10 ° 0° −−− 10°
L
A1 STYLE 6:
L1 PIN 1. BASE
2. EMITTER
VIEW C 3. COLLECTOR

SOLDERING FOOTPRINT*
0.95
0.95 0.037
0.037

2.0
0.079

0.9
0.035
SCALE 10:1 ǒinches
mm Ǔ

0.8
0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local
Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

http://onsemi.com MMBT3904LT1/D
7