2SK3699-01MR 200305

FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET

Super FAP-G Series Outline Drawings [mm]
Features TO-220F
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
www.DataSheet4U.com
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain-source voltage V DS 900 V
VDSX *5 900 V
Continuous drain current ID ±3.7 A Equivalent circuit schematic
Pulsed drain current ID(puls] ±14.8 A
Gate-source voltage VGS ±30 V Drain(D)
Repetitive or non-repetitive IAR *2 3.7 A
Maximum Avalanche Energy EAS *1 171.1 mJ
Maximum Drain-Source dV/dt dVDS/dt *4 40 kV/µs
Peak Diode Recovery dV/dt dV/dt *3 5 kV/µs
Gate(G)
Max. power dissipation PD Ta=25°C 2.16 W
Tc=25°C 43 Source(S)
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
Isolation Voltage VISO *6 2000 Vrms
<
*1 L=22.9mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch =150°C
< < < <
*3 IF = -ID, -di/dt=50A/µs, Vcc = BVDSS, Tch = 150°C *4 VDS = 900V *5 VGS=-30V *6 f=60Hz, t=60sec.
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID= 250µA VGS=0V 900 V
Gate threshold voltage VGS(th) ID= 250µA VDS=VGS 3.0 5.0 V
VDS=900V VGS=0V Tch=25°C 25 µA
Zero gate voltage drain current IDSS
VDS=720V VGS=0V Tch=125°C 250
Gate-source leakage current IGSS VGS=±30V VDS=0V 100 nA
Drain-source on-state resistance RDS(on) ID=1.85A VGS=10V 3.31 4.30 Ω
Forward transcondutance gfs ID=1.85A VDS=25V 2 4 S
Input capacitance Ciss VDS =25V 430 650 pF
Output capacitance Coss VGS=0V 60 90
Reverse transfer capacitance Crss f=1MHz 3.5 5
Turn-on time ton td(on) VCC=600V ID=1.85A 19 29 ns
tr VGS=10V 7 11
Turn-off time toff td(off) RGS=10 Ω 32 48
tf 17 26
Total Gate Charge QG VCC =450V 16.5 24.8 nC
Gate-Source Charge QGS ID=3.7A 6.4 9.6
Gate-Drain Charge QGD VGS=10V 3.7 5.6
Avalanche capability IAV L=22.9mH Tch=25°C 3.7 A
Diode forward on-voltage V SD IF=3.7A VGS=0V Tch=25°C 0.9 1.50 V
Reverse recovery time t rr IF=3.7A VGS=0V 1.0 µs
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 4.0 µC
Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 2.907 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 58.0 °C/W
1
 2SK3699-01MR FUJI POWER MOSFET
Characteristics

Allowable Power Dissipation Typical Output Characteristics

60
PD=f(Tc)
5
ID=f(VDS):80 µs pulse test,Tch=25°C
10V
20V
7.0V
6.5V
50
4
6.0V

40

ID [A]
PD [W]

30

www.DataSheet4U.com 2
20

VGS=5.5V
1
10

0 0
0 25 50 75 100 125 150 0 5 10 15 20 25
Tc [°C] VDS [V]

Typical Transfer Characteristic Typical Transconductance

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C

10

1
ID[A]

gfs [S]

0.1

0 1 2 3 4 5 6 7 8 9 10 0.1 1 10
VGS[V] ID [A]

Typical Drain-Source on-state Resistance Drain-Source On-state Resistance

RDS(on)=f(ID):80 µ s pulse test,Tch=25°C RDS(on)=f(Tch):ID=1.85A,VGS=10V
12
VGS=5.5V 6.0V
4.4 6.5V
7.0V
10
4.2

10V
4.0 20V
RDS(on) [ Ω ]

8
RDS(on) [ Ω ]

3.8
6
max.
3.6

4
typ.
3.4

2
3.2

3.0 0
0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150
ID [A] Tch [°C]

2
 2SK3699-01MR FUJI POWER MOSFET

Gate Threshold Voltage vs. Tch Typical Gate Charge Characteristics

VGS(th)=f(Tch):VDS=VGS,ID=250µA VGS=f(Qg):ID=3.7A,Tch=25°C
7.0 14

6.5

6.0 12

5.5 Vcc= 180V

450V
5.0 max. 10
720V
VGS(th) [V]

4.5

4.0 8

VGS [V]
3.5

3.0 min. 6
www.DataSheet4U.com
2.5

2.0 4

1.5

1.0 2

0.5

0.0 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25

Tch [°C] Qg [nC]

Typical Capacitance Typical Forward Characteristics of Reverse Diode

C=f(VDS):VGS=0V,f=1MHz 10
IF=f(VSD):80 µ s pulse test,Tch=25°C

0
10
Ciss
IF [A]

-1
C [nF]

10
1
Coss

-2
10

Crss

-3
10 0.1
10
0
10
1
10
2 0.00 0.25 0.50 0.75 1.00 1.25 1.50

VDS [V] VSD [V]

Typical Switching Characteristics vs. ID Maximum Avalanche Energy vs. starting Tch
3 t=f(ID):Vcc=600V,VGS=10V,RG=10Ω 350
E(AS)=f(starting Tch):Vcc=90V
10
IAS=2A

300
tf

250
2
10
IAS=3A

td(off) 200
EAS [mJ]

IAS=3.7A
t [ns]

150
td(on)
1
10
100

tr
50

0
10 0
-1 0 1
10 10 10 0 25 50 75 100 125 150

ID [A] starting Tch [°C]

3
 2SK3699-01MR FUJI POWER MOSFET

Maximum Avalanche Current Pulsewidth

IAV=f(tAV):starting Tch=25°C,Vcc=90V
2
10
Avalanche Current I AV [A]

1
10
Single Pulse

0
10

www.DataSheet4U.com

-1
10

-2
10
-8 -7 -6 -5 -4 -3 -2
10 10 10 10 10 10 10

tAV [sec]

Maximum Transient Thermal Impedance

1
Zth(ch-c)=f(t):D=0
10

0
10
Zth(ch-c) [°C/W]

-1
10

-2
10

-3
10
-6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 10

t [sec]

http://www.fujielectric.co.jp/denshi/scd/